Single FETs, MOSFETs

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Mfr Part #	Quantity Available	Price	Series	Package	Product Status	FET Type	Technology	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)	Rds On (Max) @ Id, Vgs	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Vgs (Max)	Input Capacitance (Ciss) (Max) @ Vds	FET Feature	Power Dissipation (Max)	Operating Temperature	Grade	Qualification	Mounting Type	Supplier Device Package	Package / Case

IRFR3910TRPBF MOSFET N-CH 100V 16A DPAK Infineon Technologies	17,902 In Stock	1 : $1.28000 Cut Tape (CT) 2,000 : $0.41481 Tape & Reel (TR)	HEXFET®	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Active	N-Channel	MOSFET (Metal Oxide)	100 V	16A (Tc)	10V	115mOhm @ 10A, 10V	4V @ 250µA	44 nC @ 10 V	±20V	640 pF @ 25 V	-	79W (Tc)	-55°C ~ 175°C (TJ)	-	-	Surface Mount	TO-252AA (DPAK)	TO-252-3, DPAK (2 Leads + Tab), SC-63
SPD30P06PGBTMA1 MOSFET P-CH 60V 30A TO252-3 Infineon Technologies	14,764 In Stock	1 : $1.76000 Cut Tape (CT) 2,500 : $0.58950 Tape & Reel (TR)	SIPMOS®	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Active	P-Channel	MOSFET (Metal Oxide)	60 V	30A (Tc)	10V	75mOhm @ 21.5A, 10V	4V @ 1.7mA	48 nC @ 10 V	±20V	1535 pF @ 25 V	-	125W (Tc)	-55°C ~ 175°C (TJ)	Automotive	AEC-Q101	Surface Mount	PG-TO252-3	TO-252-3, DPAK (2 Leads + Tab), SC-63
BSC034N10LS5ATMA1 MOSFET N-CH 100V 19A/100A TDSON Infineon Technologies	25,283 In Stock	1 : $3.32000 Cut Tape (CT) 5,000 : $1.47434 Tape & Reel (TR)	OptiMOS™ 5	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Active	N-Channel	MOSFET (Metal Oxide)	100 V	19A (Ta), 100A (Tc)	4.5V, 10V	3.4mOhm @ 50A, 10V	2.3V @ 115µA	46 nC @ 4.5 V	±20V	6500 pF @ 50 V	-	2.5W (Ta), 156W (Tc)	-55°C ~ 150°C (TJ)	-	-	Surface Mount	PG-TDSON-8-7	8-PowerTDFN

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Single FETs, MOSFETs

Discrete Field Effect Transistors (FETs) are widely used in power conversion, motor control, solid-state lighting, and other applications where their characteristic ability to be switched on & off at high frequencies while carrying substantial amounts of current is advantageous. They are used almost universally for applications requiring voltage ratings of a few hundred volts or less, above which other device types such as IGBTs become more competitive.