Single IGBTs

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IGBT Type
Voltage - Collector Emitter Breakdown (Max)
Current - Collector (Ic) (Max)
Current - Collector Pulsed (Icm)
Vce(on) (Max) @ Vge, Ic
Power - Max
Switching Energy
Input Type
Gate Charge
Td (on/off) @ 25°C
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TO-247-3-PKG-Series
APT25GT120BRG
IGBT NPT 1200V 54A TO247
Microchip Technology
563
In Stock
1 : $6.51000
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NPT
1200 V
54 A
75 A
3.7V @ 15V, 25A
347 W
930µJ (on), 720µJ (off)
Standard
170 nC
14ns/150ns
800V, 25A, 5Ohm, 15V
-55°C ~ 150°C (TJ)
Through Hole
TO-247-3
TO-247 [B]
TO-247-AD-EP-(H)
IXGH32N170
IGBT NPT 1700V 75A TO-247AD
IXYS
194
In Stock
1 : $20.84000
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NPT
1700 V
75 A
200 A
3.3V @ 15V, 32A
350 W
11mJ (off)
Standard
155 nC
45ns/270ns
1020V, 32A, 2.7Ohm, 15V
-55°C ~ 150°C (TJ)
Through Hole
TO-247-3
TO-247AD
TO-247-3-PKG-Series
APT25GT120BRDQ2G
IGBT NPT 1200V 54A TO247
Microchip Technology
88
In Stock
1 : $8.23000
Tube
-
Tube
Active
NPT
1200 V
54 A
75 A
3.7V @ 15V, 25A
347 W
930µJ (on), 720µJ (off)
Standard
170 nC
14ns/150ns
800V, 25A, 5Ohm, 15V
-55°C ~ 150°C (TJ)
Through Hole
TO-247-3
TO-247 [B]
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Single IGBTs

Single IGBTs (Insulated Gate Bipolar Transistors) are multilayered semiconductor devices with three terminals that can handle high currents and have fast switching features. They are characterized by type, collector-emitter breakdown voltage, collector current, pulsed collector current, VCE(ON), switching energy, and gate charge.