Single IGBTs

Results: 12
Stocking Options
Environmental Options
Media
Marketplace Product
12Results
Showing
of 12
Mfr Part #
Quantity Available
Price
Series
Package
Product Status
IGBT Type
Voltage - Collector Emitter Breakdown (Max)
Current - Collector (Ic) (Max)
Current - Collector Pulsed (Icm)
Vce(on) (Max) @ Vge, Ic
Power - Max
Switching Energy
Input Type
Gate Charge
Td (on/off) @ 25°C
Test Condition
Reverse Recovery Time (trr)
Operating Temperature
Grade
Qualification
Mounting Type
Package / Case
Supplier Device Package
PG-TO247-3-46
IKQ50N120CT2XKSA1
IGBT TRENCH FS 1200V 100A TO247
Infineon Technologies
1,523
In Stock
1 : $12.96000
Tube
Tube
Not For New Designs
Trench Field Stop
1200 V
100 A
200 A
2.15V @ 15V, 50A
652 W
3.8mJ (on), 3.3mJ (off)
Standard
235 nC
34ns/312ns
400V, 50A, 10Ohm, 15V
-
-40°C ~ 175°C (TJ)
-
-
Through Hole
TO-247-3
PG-TO247-3-46
IHW15N120R3FKSA1
IGW25N120H3FKSA1
IGBT TRENCH FS 1200V 50A TO247-3
Infineon Technologies
1,607
In Stock
1 : $5.94000
Tube
Tube
Active
Trench Field Stop
1200 V
50 A
100 A
2.4V @ 15V, 25A
326 W
2.65mJ
Standard
115 nC
27ns/277ns
600V, 25A, 23Ohm, 15V
-
-40°C ~ 175°C (TJ)
-
-
Through Hole
TO-247-3
PG-TO247-3-1
214
In Stock
1 : $12.76000
Tube
-
Tube
Active
-
750 V
200 A
600 A
1.65V @ 15V, 200A
937 W
14.4mJ (on), 6.9mJ (off)
Standard
797 nC
95ns/407ns
450V, 200A, 4.8Ohm, 15V
-
-40°C ~ 175°C (TJ)
-
-
Through Hole
TO-247-3
PG-TO247-3-51
TO-247-4
IKY40N120CS6XKSA1
IGBT TRENCH FS 1200V 80A TO247-4
Infineon Technologies
713
In Stock
1 : $8.20000
Tube
Tube
Active
Trench Field Stop
1200 V
80 A
160 A
2.15V @ 15V, 40A
500 W
1.45mJ (on), 1.55mJ (off)
Standard
285 nC
27ns/315ns
600V, 40A, 9Ohm, 15V
255 ns
-40°C ~ 175°C (TJ)
-
-
Through Hole
TO-247-4
PG-TO247-4-2
PG-TO247-3-46
IKQ50N120CH3XKSA1
IGBT 1200V 100A TO247-3-46
Infineon Technologies
472
In Stock
1 : $8.96000
Tube
-
Tube
Active
-
1200 V
100 A
200 A
2.35V @ 15V, 50A
652 W
3mJ (on), 1.9mJ (off)
Standard
235 nC
34ns/297ns
600V, 50A, 10Ohm, 15V
-
-40°C ~ 175°C (TJ)
-
-
Through Hole
TO-247-3
PG-TO247-3-46
TO-247-4
FGH4L40T120LQD
IGBT TRENCH FS 1200V 80A TO-247
onsemi
292
In Stock
1 : $9.26000
Tube
-
Tube
Active
Trench Field Stop
1200 V
80 A
160 A
1.8V @ 15V, 40A
306 W
1.04mJ (on), 1.35mJ (off)
Standard
227 nC
42ns/218ns
600V, 40A, 10Ohm, 15V
59 ns
-55°C ~ 175°C (TJ)
-
-
Through Hole
TO-247-4
TO-247-4L
PG-TO247-4-U02
IKZA40N120CH7XKSA1
IGBT TRENCH FS 1200V 95A TO247-4
Infineon Technologies
128
In Stock
1 : $8.91000
Tube
Tube
Active
Trench Field Stop
1200 V
95 A
160 A
2.15V @ 15V, 40A
330 W
970µJ (on), 1.01mJ (off)
Standard
290 nC
34ns/360ns
-
90 ns
-40°C ~ 175°C (TJ)
-
-
Through Hole
TO-247-4
PG-TO247-4-U02
223
In Stock
1 : $9.57000
Tube
-
Tube
Active
-
1200 V
80 A
160 A
2.35V @ 15V, 40A
500 W
2.18mJ (on), 1.3mJ (off)
Standard
190 nC
30ns/280ns
600V, 40A, 12Ohm, 15V
350 ns
-40°C ~ 175°C (TJ)
-
-
Through Hole
TO-247-4
PG-TO247-4
IKY100N120CH7XKSA1
IKY50N120CH7XKSA1
IGBT TRENCH FS 1200V 75A TO247-4
Infineon Technologies
203
In Stock
1 : $9.84000
Tube
Tube
Active
Trench Field Stop
1200 V
75 A
200 A
2.15V @ 15V, 50A
398 W
1.09mJ (on), 1.33mJ (off)
Standard
372 nC
35ns/331ns
-
86 ns
-40°C ~ 175°C (TJ)
-
-
Through Hole
TO-247-4
PG-TO247-4-U10
PG-TO247-4-U02
IKZA75N120CH7XKSA1
IGBT TRENCH FS 1200V 109A TO247
Infineon Technologies
160
In Stock
1 : $11.63000
Tube
Tube
Active
Trench Field Stop
1200 V
109 A
300 A
2.15V @ 15V, 75A
549 W
2.01mJ (on), 1.76mJ (off)
Standard
550 nC
40ns/359ns
-
95 ns
-40°C ~ 175°C (TJ)
-
-
Through Hole
TO-247-4
PG-TO247-4-U02
240
In Stock
1 : $10.73000
Tube
-
Tube
Active
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
PG-TO247-4-U02
IKZA50N120CH7XKSA1
IGBT TRENCH FS 1200V 100A TO247
Infineon Technologies
85
In Stock
1 : $9.66000
Tube
Tube
Active
Trench Field Stop
1200 V
100 A
200 A
2.15V @ 15V, 50A
398 W
950µJ (on), 1.42mJ (off)
Standard
372 nC
39ns/333ns
-
96 ns
-40°C ~ 175°C (TJ)
-
-
Through Hole
TO-247-4
PG-TO247-4-U02
Showing
of 12

Single IGBTs

Single IGBTs (Insulated Gate Bipolar Transistors) are multilayered semiconductor devices with three terminals that can handle high currents and have fast switching features. They are characterized by type, collector-emitter breakdown voltage, collector current, pulsed collector current, VCE(ON), switching energy, and gate charge.