Single FETs, MOSFETs

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of 328

Mfr Part #	Quantity Available	Price	Tariff Status	Series	Package	Product Status	FET Type	Technology	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)	Rds On (Max) @ Id, Vgs	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Vgs (Max)	Input Capacitance (Ciss) (Max) @ Vds	FET Feature	Power Dissipation (Max)	Operating Temperature	Grade	Qualification	Mounting Type	Supplier Device Package	Package / Case
SIHF22N60E-GE3 MOSFET N-CH 600V 21A TO220 Vishay Siliconix	2,136 In Stock	1 : $4.96000 Tube	-	E	Tube	Active	N-Channel	MOSFET (Metal Oxide)	600 V	21A (Tc)	10V	180mOhm @ 11A, 10V	4V @ 250µA	86 nC @ 10 V	±30V	1920 pF @ 100 V	-	35W (Tc)	-55°C ~ 150°C (TJ)	-	-	Through Hole	TO-220 Full Pack	TO-220-3 Full Pack
SIHH080N60E-T1-GE3 E SERIES POWER MOSFET POWERPAK 8 Vishay Siliconix	578 In Stock	1 : $5.93000 Cut Tape (CT) 3,000 : $2.30125 Tape & Reel (TR)	-	E	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Active	N-Channel	MOSFET (Metal Oxide)	600 V	32A (Tc)	10V	80mOhm @ 17A, 10V	5V @ 250µA	63 nC @ 10 V	±30V	2557 pF @ 100 V	-	184W (Tc)	-55°C ~ 150°C (TJ)	-	-	Surface Mount	PowerPAK® 8 x 8	8-PowerTDFN
E4M0025075J2-TR MOSFETS 3055 PF 281W 3.8V 114 NC Wolfspeed, Inc.	913 In Stock	1 : $19.85000 Cut Tape (CT) 800 : $11.18750 Tape & Reel (TR)	-	E	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Active	N-Channel	SiCFET (Silicon Carbide)	750 V	84A (Tc)	15V	34mOhm @ 33.5A, 15V	3.8V @ 9.22mA	114 nC @ 15 V	+19V, -8V	3055 pF @ 500 V	-	281W (Tc)	-55°C ~ 175°C (TJ)	Automotive	AEC-Q101	Surface Mount	TO-263-7	TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
SIHD5N80AE-GE3 E SERIES POWER MOSFET DPAK (TO-2 Vishay Siliconix	3,130 In Stock	1 : $1.62000 Tube	-	E	Tube	Active	N-Channel	MOSFET (Metal Oxide)	800 V	4.4A (Tc)	10V	1.35Ohm @ 1.5A, 10V	4V @ 250µA	16.5 nC @ 10 V	±30V	321 pF @ 100 V	-	62.5W (Tc)	-55°C ~ 150°C (TJ)	-	-	Surface Mount	TO-252AA	TO-252-3, DPAK (2 Leads + Tab), SC-63
SIHJ240N60E-T1-GE3 MOSFET N-CH 600V 12A PPAK SO-8 Vishay Siliconix	3,137 In Stock	1 : $3.56000 Cut Tape (CT) 3,000 : $1.15750 Tape & Reel (TR)	-	E	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Active	N-Channel	MOSFET (Metal Oxide)	600 V	12A (Tc)	10V	240mOhm @ 5.5A, 10V	5V @ 250µA	23 nC @ 10 V	±30V	783 pF @ 100 V	-	89W (Tc)	-55°C ~ 150°C (TJ)	-	-	Surface Mount	PowerPAK® SO-8	PowerPAK® SO-8
SIHP24N80AE-GE3 MOSFET N-CH 800V 21A TO220AB Vishay Siliconix	2,293 In Stock	1 : $4.31602 Tube	-	E	Tube	Active	N-Channel	MOSFET (Metal Oxide)	800 V	21A (Tc)	10V	184mOhm @ 10A, 10V	4V @ 250µA	89 nC @ 10 V	±30V	1836 pF @ 100 V	-	208W (Tc)	-55°C ~ 150°C (TJ)	-	-	Through Hole	TO-220AB	TO-220-3
SIHP065N60E-GE3 MOSFET N-CH 600V 40A TO220AB Vishay Siliconix	314 In Stock	1 : $8.36000 Tube	-	E	Tube	Active	N-Channel	MOSFET (Metal Oxide)	600 V	40A (Tc)	10V	65mOhm @ 16A, 10V	5V @ 250µA	98 nC @ 10 V	±30V	2700 pF @ 100 V	-	250W (Tc)	-55°C ~ 150°C (TJ)	-	-	Through Hole	TO-220AB	TO-220-3
E3M0075120J2-TR 75m, 1200V SiC FET, TO-263-7 XL Wolfspeed, Inc.	1,020 In Stock	1 : $9.25000 Cut Tape (CT) 800 : $4.15000 Tape & Reel (TR)	-	E	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Active	N-Channel	SiCFET (Silicon Carbide)	1200 V	34A (Tc)	15V	97.5mOhm @ 17.9A, 15V	3.8V @ 5mA	52 nC @ 15 V	+19V, -8V	1480 pF @ 1000 V	-	172W (Tc)	-55°C ~ 175°C (TJ)	Automotive	AEC-Q101	Surface Mount	TO-263-7	TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
E3M0021120J2-TR 21m, 1200V SiC FET, TO-263-7 XL Wolfspeed, Inc.	189 In Stock	1 : $18.73000 Cut Tape (CT) 800 : $10.38750 Tape & Reel (TR)	-	E	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Active	N-Channel	SiCFET (Silicon Carbide)	1200 V	114A (Tc)	15V	29mOhm @ 62.12A, 15V	3.8V @ 17.1mA	169 nC @ 15 V	+19V, -8V	5100 pF @ 1000 V	-	500W (Tc)	-55°C ~ 175°C (TJ)	Automotive	AEC-Q101	Surface Mount	TO-263-7	TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
E4M0015075J2-TR MOSFETS 5128 PF 554W 3.8V 180 NC Wolfspeed, Inc.	623 In Stock	1 : $21.65000 Cut Tape (CT) 800 : $12.50000 Tape & Reel (TR)	-	E	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Active	N-Channel	SiCFET (Silicon Carbide)	750 V	156A (Tc)	15V	21mOhm @ 55.8A, 15V	3.8V @ 15.4mA	180 nC @ 15 V	+19V, -8V	5128 pF @ 500 V	-	554W (Tc)	-55°C ~ 175°C (TJ)	Automotive	AEC-Q101	Surface Mount	TO-263-7	TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
SIHA5N80AE-GE3 E SERIES POWER MOSFET THIN-LEAD Vishay Siliconix	690 In Stock	1 : $1.93000 Tube	-	E	Tube	Active	N-Channel	MOSFET (Metal Oxide)	800 V	3A (Tc)	10V	1.35Ohm @ 1.5A, 10V	4V @ 250µA	16.5 nC @ 10 V	±30V	321 pF @ 100 V	-	29W (Tc)	-55°C ~ 150°C (TJ)	-	-	Through Hole	TO-220 Full Pack	TO-220-3 Full Pack
SIHA6N80AE-GE3 MOSFET N-CH 800V 5A TO220 Vishay Siliconix	729 In Stock	1 : $2.18000 Tube	-	E	Tube	Active	N-Channel	MOSFET (Metal Oxide)	800 V	5A (Tc)	10V	950mOhm @ 2A, 10V	4V @ 250µA	22.5 nC @ 10 V	±30V	422 pF @ 100 V	-	30W (Tc)	-55°C ~ 150°C (TJ)	-	-	Through Hole	TO-220 Full Pack	TO-220-3 Full Pack
SIHD12N50E-GE3 MOSFET N-CH 550V 10.5A DPAK Vishay Siliconix	2,462 In Stock	1 : $2.53000 Tube	-	E	Tube	Active	N-Channel	MOSFET (Metal Oxide)	550 V	10.5A (Tc)	10V	380mOhm @ 6A, 10V	4V @ 250µA	50 nC @ 10 V	±30V	886 pF @ 100 V	-	114W (Tc)	-55°C ~ 150°C (TA)	-	-	Surface Mount	DPAK	TO-252-3, DPAK (2 Leads + Tab), SC-63
SIHD11N80AE-GE3 MOSFET N-CH 800V 8A TO252AA Vishay Siliconix	1,775 In Stock	1 : $2.53000 Tube	-	E	Tube	Active	N-Channel	MOSFET (Metal Oxide)	800 V	8A (Tc)	10V	450mOhm @ 5.5A, 10V	4V @ 250µA	42 nC @ 10 V	±30V	804 pF @ 100 V	-	78W (Tc)	-55°C ~ 150°C (TJ)	-	-	Surface Mount	TO-252AA	TO-252-3, DPAK (2 Leads + Tab), SC-63
SIHA11N80AE-GE3 MOSFET N-CH 800V 8A TO220 Vishay Siliconix	218 In Stock	1 : $2.74000 Tube	-	E	Tube	Active	N-Channel	MOSFET (Metal Oxide)	800 V	8A (Tc)	10V	450mOhm @ 5.5A, 10V	4V @ 250µA	42 nC @ 10 V	±30V	804 pF @ 100 V	-	31W (Tc)	-55°C ~ 150°C (TJ)	-	-	Through Hole	TO-220 Full Pack	TO-220-3 Full Pack
SIHP11N80AE-GE3 MOSFET N-CH 800V 8A TO220AB Vishay Siliconix	742 In Stock	1 : $2.76000 Tube	-	E	Tube	Active	N-Channel	MOSFET (Metal Oxide)	800 V	8A (Tc)	10V	450mOhm @ 5.5A, 10V	4V @ 250µA	42 nC @ 10 V	±30V	804 pF @ 100 V	-	78W (Tc)	-55°C ~ 150°C (TJ)	-	-	Through Hole	TO-220AB	TO-220-3
SIHB11N80AE-GE3 MOSFET N-CH 800V 8A D2PAK Vishay Siliconix	894 In Stock	1 : $2.92000 Tube	-	E	Tube	Active	N-Channel	MOSFET (Metal Oxide)	800 V	8A (Tc)	10V	450mOhm @ 5.5A, 10V	4V @ 250µA	42 nC @ 10 V	±30V	804 pF @ 100 V	-	78W (Tc)	-55°C ~ 150°C (TJ)	-	-	Surface Mount	TO-263 (D2PAK)	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
SIHD14N60E-GE3 MOSFET N-CH 600V 13A DPAK Vishay Siliconix	938 In Stock	1 : $3.02000 Tube	-	E	Tube	Active	N-Channel	MOSFET (Metal Oxide)	600 V	13A (Tc)	10V	309mOhm @ 7A, 10V	4V @ 250µA	64 nC @ 10 V	±30V	1205 pF @ 100 V	-	147W (Tc)	-55°C ~ 150°C (TJ)	-	-	Surface Mount	DPAK	TO-252-3, DPAK (2 Leads + Tab), SC-63
SIHA14N60E-GE3 N-CHANNEL 600V Vishay Siliconix	2,892 In Stock	1 : $3.10000 Tube	-	E	Tube	Active	N-Channel	MOSFET (Metal Oxide)	600 V	13A (Tc)	10V	309mOhm @ 7A, 10V	4V @ 250µA	64 nC @ 10 V	±30V	1205 pF @ 100 V	-	147W (Tc)	-55°C ~ 150°C (TJ)	-	-	Through Hole	TO-220 Full Pack	TO-220-3 Full Pack
SIHB15N80AE-GE3 MOSFET N-CH 800V 13A D2PAK Vishay Siliconix	760 In Stock	1 : $3.43000 Tube	-	E	Tube	Active	N-Channel	MOSFET (Metal Oxide)	800 V	13A (Tc)	10V	350mOhm @ 7.5A, 10V	4V @ 250µA	53 nC @ 10 V	±30V	1093 pF @ 100 V	-	156W (Tc)	-55°C ~ 150°C (TJ)	-	-	Surface Mount	TO-263 (D2PAK)	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
SIHJ10N60E-T1-GE3 MOSFET N-CH 600V 10A PPAK SO-8 Vishay Siliconix	12,503 In Stock	1 : $3.61000 Cut Tape (CT) 3,000 : $1.18000 Tape & Reel (TR)	-	E	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Active	N-Channel	MOSFET (Metal Oxide)	600 V	10A (Tc)	10V	360mOhm @ 5A, 10V	4.5V @ 250µA	50 nC @ 10 V	±30V	784 pF @ 100 V	-	89W (Tc)	-55°C ~ 150°C (TJ)	-	-	Surface Mount	PowerPAK® SO-8	PowerPAK® SO-8
SIHD180N60E-GE3 MOSFET N-CH 600V 19A TO252AA Vishay Siliconix	2,383 In Stock	1 : $3.86000 Tube	-	E	Tube	Active	N-Channel	MOSFET (Metal Oxide)	600 V	19A (Tc)	10V	195mOhm @ 9.5A, 10V	5V @ 250µA	32 nC @ 10 V	±30V	1080 pF @ 100 V	-	156W (Tc)	-55°C ~ 150°C (TJ)	-	-	Surface Mount	DPAK	TO-252-3, DPAK (2 Leads + Tab), SC-63
SIHG17N80AE-GE3 MOSFET N-CH 800V 15A TO247AC Vishay Siliconix	738 In Stock	1 : $4.10000 Tube	-	E	Tube	Active	N-Channel	MOSFET (Metal Oxide)	800 V	15A (Tc)	10V	290mOhm @ 8.5A, 10V	4V @ 250µA	62 nC @ 10 V	±30V	1260 pF @ 100 V	-	179W (Tc)	-55°C ~ 150°C (TJ)	-	-	Through Hole	TO-247AC	TO-247-3
SIHA18N60E-GE3 N-CHANNEL 600V Vishay Siliconix	904 In Stock	1 : $4.15000 Cut Tape (CT) 1,000 : $1.46955 Tape & Reel (TR)	-	E	Tape & Reel (TR) Cut Tape (CT)	Active	N-Channel	MOSFET (Metal Oxide)	600 V	18A (Tc)	10V	202mOhm @ 9A, 10V	4V @ 250µA	92 nC @ 10 V	±30V	1640 pF @ 100 V	-	34W (Tc)	-55°C ~ 150°C (TJ)	-	-	Through Hole	TO-220 Full Pack	TO-220-3 Full Pack
SIHP100N60E-GE3 MOSFET N-CH 600V 30A TO220AB Vishay Siliconix	3,892 In Stock	1 : $5.09000 Tube	-	E	Tube	Active	N-Channel	MOSFET (Metal Oxide)	600 V	30A (Tc)	10V	100mOhm @ 13A, 10V	5V @ 250µA	50 nC @ 10 V	±30V	1851 pF @ 100 V	-	208W (Tc)	-55°C ~ 150°C (TJ)	-	-	Through Hole	TO-220AB	TO-220-3

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Single FET, MOSFETs

Single Field Effect Transistors (FETs) and Metal-Oxide-Semiconductor Field-Effect Transistors (MOSFETs) are types of transistors used to amplify or switch electronic signals.

A Single FET operates by controlling the flow of electrical current between the source and drain terminals through an electric field generated by a voltage applied to the gate terminal. The main advantage of FETs is their high input impedance, which makes them ideal for use in signal amplification and analog circuits. They are widely used in applications such as amplifiers, oscillators, and buffer stages in electronic circuits.

MOSFETs, a subtype of FETs, have a gate terminal insulated from the channel by a thin oxide layer, enhancing their performance and making them highly efficient. MOSFETs can be further categorized into two types:

n-channel MOSFETs: where electrons are the primary carriers.
p-channel MOSFETs: where holes are the primary carriers.

MOSFETs are preferred in many applications due to their low power consumption, high-speed switching, and ability to handle large currents and voltages. They are crucial in digital and analog circuits, including power supplies, motor drivers, and radio-frequency applications.

The operation of MOSFETs can be broken down into two modes:

Enhancement Mode: In this mode, the MOSFET is normally off when the gate-source voltage is zero. It requires a positive gate-source voltage (for n-channel) or a negative gate-source voltage (for p-channel) to turn on.
Depletion Mode: In this mode, the MOSFET is normally on when the gate-source voltage is zero. Applying a gate-source voltage of opposite polarity can turn it off.

MOSFETs offer several advantages, such as:

High Efficiency: They consume very little power and can switch states rapidly, making them highly efficient for power management applications.
Low On-Resistance: They have low resistance when turned on, which minimizes power loss and heat generation.
High Input Impedance: The insulated gate structure results in extremely high input impedance, making them ideal for high-impedance signal amplification.

In summary, single FETs, particularly MOSFETs, are fundamental components in modern electronics, known for their efficiency, speed, and versatility in a wide range of applications from low-power signal amplification to high-power switching and control.

Single FET, MOSFETs

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