Single FETs, MOSFETs

Showing

of 1,416

Mfr Part #	Quantity Available	Price	Tariff Status	Series	Package	Product Status	FET Type	Technology	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)	Rds On (Max) @ Id, Vgs	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Gate Charge (Qg) (Max) @ Vgs	Voltage Coupled to Gate Charge (Qg) (Max) @ Vgs	Vgs (Max)	Input Capacitance (Ciss) (Max) @ Vds	Input Capacitance (Ciss) (Max) @ Vds	Voltage Coupled to Input Capacitance (Ciss) (Max) @ Vds	FET Feature	Power Dissipation (Max)	Operating Temperature	Grade	Qualification	Mounting Type	Supplier Device Package	Package / Case
IMBF170R1K0M1XTMA1 SICFET N-CH 1700V 5.2A TO263-7 Infineon Technologies	2,526 In Stock	1 : $4.91000 Cut Tape (CT) 1,000 : $1.78450 Tape & Reel (TR)	-	CoolSiC™	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Active	N-Channel	SiCFET (Silicon Carbide)	1700 V	5.2A (Tc)	12V, 15V	1000mOhm @ 1A, 15V	5.7V @ 1.1mA	5 nC @ 12 V	5 nC @ 12 V	-	+20V, -10V	275 pF @ 1000 V	275 pF @ 1000 V	-	-	68W (Tc)	-55°C ~ 175°C (TJ)	-	-	Surface Mount	PG-TO263-7-13	TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
MSC750SMA170B SICFET N-CH 1700V 7A TO247-3 Microchip Technology	475 In Stock	1 : $5.44000 Tube	Tariff may apply if shipping to the United States	-	Tube	Active	N-Channel	SiCFET (Silicon Carbide)	1700 V	7A (Tc)	20V	940mOhm @ 2.5A, 20V	3.25V @ 100µA (Typ)	11 nC @ 20 V	11 nC @ 20 V	-	+23V, -10V	184 pF @ 1360 V	184 pF @ 1360 V	-	-	68W (Tc)	-55°C ~ 175°C (TJ)	-	-	Through Hole	TO-247-3	TO-247-3
MSC750SMA170B4 TRANS SJT 1700V TO247-4 Microchip Technology	456 In Stock	1 : $5.61000 Tube	-	-	Tube	Active	N-Channel	SiCFET (Silicon Carbide)	1700 V	7A (Tc)	20V	940mOhm @ 2.5A, 20V	3.25V @ 100µA (Typ)	11 nC @ 20 V	11 nC @ 20 V	-	+23V, -10V	184 pF @ 1360 V	184 pF @ 1360 V	-	-	68W (Tc)	-55°C ~ 175°C (TJ)	-	-	Through Hole	TO-247-4	TO-247-4
IMBF170R650M1XTMA1 SICFET N-CH 1700V 7.4A TO263-7 Infineon Technologies	1,524 In Stock	1 : $5.66000 Cut Tape (CT) 1,000 : $2.16325 Tape & Reel (TR)	-	CoolSiC™	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Active	N-Channel	SiCFET (Silicon Carbide)	1700 V	7.4A (Tc)	12V, 15V	650mOhm @ 1.5A, 15V	5.7V @ 1.7mA	8 nC @ 12 V	8 nC @ 12 V	-	+20V, -10V	422 pF @ 1000 V	422 pF @ 1000 V	-	-	88W (Tc)	-55°C ~ 175°C (TJ)	-	-	Surface Mount	PG-TO263-7-13	TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
IMBF170R450M1XTMA1 SICFET N-CH 1700V 9.8A TO263-7 Infineon Technologies	1,906 In Stock	1 : $6.72000 Cut Tape (CT) 1,000 : $2.72012 Tape & Reel (TR)	-	CoolSiC™	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Active	N-Channel	SiCFET (Silicon Carbide)	1700 V	9.8A (Tc)	12V, 15V	450mOhm @ 2A, 15V	5.7V @ 2.5mA	11 nC @ 12 V	11 nC @ 12 V	-	+20V, -10V	610 pF @ 1000 V	610 pF @ 1000 V	-	-	107W (Tc)	-55°C ~ 175°C (TJ)	-	-	Surface Mount	PG-TO263-7-13	TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
SCT2H12NZGC11 SICFET N-CH 1700V 3.7A TO3PFM Rohm Semiconductor	578 In Stock	1 : $6.89000 Tube	-	-	Tube	Active	N-Channel	SiCFET (Silicon Carbide)	1700 V	3.7A (Tc)	18V	1.5Ohm @ 1.1A, 18V	4V @ 900µA	14 nC @ 18 V	14 nC @ 18 V	-	+22V, -6V	184 pF @ 800 V	184 pF @ 800 V	-	-	35W (Tc)	175°C (TJ)	-	-	Through Hole	TO-3PFM	TO-3PFM, SC-93-3
G3R160MT12J-TR 1200V 160M TO-263-7 G3R SIC MOSF GeneSiC Semiconductor	2,260 In Stock	1 : $7.26000 Cut Tape (CT) 800 : $5.45001 Tape & Reel (TR)	-	G3R™, LoRing™	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Active	N-Channel	SiCFET (Silicon Carbide)	1200 V	19A (Tc)	15V, 18V	180mOhm @ 10A, 18V	2.7V @ 5mA	23 nC @ 15 V	23 nC @ 15 V	-	+22V, -10V	724 pF @ 800 V	724 pF @ 800 V	-	-	110W (Tc)	-55°C ~ 175°C (TJ)	-	-	Surface Mount	TO-263-7	TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
IMBG120R078M2HXTMA1 SICFET N-CH 1200V 29A TO263 Infineon Technologies	897 In Stock	1 : $7.28000 Cut Tape (CT) 1,000 : $3.02512 Tape & Reel (TR)	-	CoolSiC™ G2	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Active	N-Channel	SiCFET (Silicon Carbide)	1200 V	29A (Tc)	15V, 18V	78.1mOhm @ 8.9A, 18V	5.1V @ 2.8mA	20.6 nC @ 18 V	20.6 nC @ 18 V	-	+23V, -10V	700 pF @ 800 V	700 pF @ 800 V	-	-	158W (Tc)	-55°C ~ 175°C (TJ)	-	-	Surface Mount	PG-TO263-7-12	TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
C3M0350120D SICFET N-CH 1200V 7.6A TO247-3 Wolfspeed, Inc.	1,090 In Stock	1 : $7.43000 Tube	Tariff may apply if shipping to the United States	C3M™	Tube	Active	N-Channel	SiCFET (Silicon Carbide)	1200 V	7.6A (Tc)	15V	455mOhm @ 3.6A, 15V	3.6V @ 1mA	19 nC @ 15 V	19 nC @ 15 V	-	+15V, -4V	345 pF @ 1000 V	345 pF @ 1000 V	-	-	50W (Tc)	-55°C ~ 150°C (TJ)	-	-	Through Hole	TO-247-3	TO-247-3
IMBG65R040M2HXTMA1 SILICON CARBIDE MOSFET Infineon Technologies	916 In Stock	1 : $8.36000 Cut Tape (CT) 1,000 : $3.63112 Tape & Reel (TR)	-	CoolSiC™ Gen 2	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Active	N-Channel	SiCFET (Silicon Carbide)	650 V	49A (Tc)	15V, 20V	49mOhm @ 22.9A, 18V	5.6V @ 4.6mA	28 nC @ 18 V	28 nC @ 18 V	-	+23V, -7V	997 pF @ 400 V	997 pF @ 400 V	-	-	197W (Tc)	-55°C ~ 175°C (TJ)	-	-	Surface Mount	PG-TO263-7-12	TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
IMBG120R053M2HXTMA1 SICFET N-CH 1200V 41A TO263 Infineon Technologies	879 In Stock	1 : $8.64000 Cut Tape (CT) 1,000 : $3.79725 Tape & Reel (TR)	-	CoolSiC™ G2	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Active	N-Channel	SiCFET (Silicon Carbide)	1200 V	41A (Tc)	15V, 18V	52.6mOhm @ 13.2A, 18V	5.1V @ 4.1mA	30 nC @ 18 V	30 nC @ 18 V	-	+23V, -10V	1010 pF @ 800 V	1010 pF @ 800 V	-	-	205W (Tc)	-55°C ~ 175°C (TJ)	-	-	Surface Mount	PG-TO263-7-12	TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
UF3C120400B7S SICFET N-CH 1200V 7.6A D2PAK-7 onsemi	964 In Stock	1 : $8.65000 Cut Tape (CT) 800 : $3.80000 Tape & Reel (TR)	Tariff may apply if shipping to the United States	-	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Active	N-Channel	SiCFET (Cascode SiCJFET)	1200 V	7.6A (Tc)	12V	515mOhm @ 5A, 12V	6V @ 10mA	22.5 nC @ 15 V	22.5 nC @ 15 V	-	±25V	739 pF @ 800 V	739 pF @ 800 V	-	-	100W (Tc)	-55°C ~ 175°C (TJ)	-	-	Surface Mount	D2PAK-7	TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
UF3C170400K3S SICFET N-CH 1700V 7.6A TO247-3 onsemi	69,016 In Stock	1 : $9.14000 Tube	-	-	Tube	Active	N-Channel	SiCFET (Cascode SiCJFET)	1700 V	7.6A (Tc)	12V	515mOhm @ 5A, 12V	6V @ 10mA	27.5 nC @ 15 V	27.5 nC @ 15 V	-	±25V	740 pF @ 100 V	740 pF @ 100 V	-	-	100W (Tc)	-55°C ~ 175°C (TJ)	-	-	Through Hole	TO-247-3	TO-247-3
SCT3120ALGC11 SICFET N-CH 650V 21A TO247N Rohm Semiconductor	3,858 In Stock	1 : $9.72000 Tube	-	-	Tube	Active	N-Channel	SiCFET (Silicon Carbide)	650 V	21A (Tc)	18V	156mOhm @ 6.7A, 18V	5.6V @ 3.33mA	38 nC @ 18 V	38 nC @ 18 V	-	+22V, -4V	460 pF @ 500 V	460 pF @ 500 V	-	-	103W (Tc)	175°C (TJ)	-	-	Through Hole	TO-247N	TO-247-3
G3R60MT07K 750V 60M TO-247-4 G3R SIC MOSFET GeneSiC Semiconductor	1,052 In Stock	1 : $10.40000 Tube	-	G3R™	Tube	Active	-	SiCFET (Silicon Carbide)	750 V	-	-	-	-	-	-	-	+20V, -10V	-	-	-	-	-	-	-	-	Through Hole	TO-247-4	TO-247-4
G3R75MT12D SIC MOSFET N-CH 41A TO247-3 GeneSiC Semiconductor	2,020 In Stock	1 : $10.50000 Tube	Tariff may apply if shipping to the United States	G3R™	Tube	Active	N-Channel	SiCFET (Silicon Carbide)	1200 V	41A (Tc)	15V	90mOhm @ 20A, 15V	2.69V @ 7.5mA	54 nC @ 15 V	54 nC @ 15 V	-	+22V, -10V	1560 pF @ 800 V	1560 pF @ 800 V	-	-	207W (Tc)	-55°C ~ 175°C (TJ)	-	-	Through Hole	TO-247-3	TO-247-3
UF3C170400B7S SICFET N-CH 1700V 7.6A D2PAK-7 onsemi	5,193 In Stock	1 : $10.63000 Cut Tape (CT) 800 : $4.98750 Tape & Reel (TR)	Tariff may apply if shipping to the United States	-	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Active	N-Channel	SiCFET (Cascode SiCJFET)	1700 V	7.6A (Tc)	12V	515mOhm @ 5A, 12V	6V @ 10mA	23.1 nC @ 15 V	23.1 nC @ 15 V	-	±25V	734 pF @ 1200 V	734 pF @ 1200 V	-	-	100W (Tc)	-55°C ~ 175°C (TJ)	-	-	Surface Mount	D2PAK-7	TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
NTHL040N120M3S SIC MOS TO247-3L 40MOHM 1200V M3 onsemi	880 In Stock 284,400 Factory	1 : $11.01000 Tube	Tariff may apply if shipping to the United States	-	Tube	Active	N-Channel	SiCFET (Silicon Carbide)	1200 V	54A (Tc)	18V	54mOhm @ 20A, 18V	4.4V @ 10mA	75 nC @ 18 V	75 nC @ 18 V	-	+22V, -10V	1700 pF @ 800 V	1700 pF @ 800 V	-	-	231W (Tc)	-55°C ~ 175°C (TJ)	-	-	Through Hole	TO-247-3	TO-247-3
AIMCQ120R060M1TXTMA1 SIC_DISCRETE Infineon Technologies	2,487 In Stock	1 : $11.06000 Cut Tape (CT) 750 : $5.25000 Tape & Reel (TR)	-	CoolSiC™	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Active	N-Channel	SiCFET (Silicon Carbide)	1200 V	44A (Tc)	18V, 20V	75mOhm @ 13A, 20V	5.1V @ 4.3mA	32 nC @ 20 V	32 nC @ 20 V	-	+25V, -10V	880 pF @ 800 V	880 pF @ 800 V	-	-	259W (Tc)	-55°C ~ 175°C (TJ)	Automotive	AEC-Q101	Surface Mount	PG-HDSOP-22	22-PowerBSOP Module
C3M0060065J SICFET N-CH 650V 36A TO263-7 Wolfspeed, Inc.	2,758 In Stock	1 : $11.78000 Tube	Tariff may apply if shipping to the United States	C3M™	Tube	Active	N-Channel	SiCFET (Silicon Carbide)	650 V	36A (Tc)	15V	79mOhm @ 13.2A, 15V	3.6V @ 5mA	46 nC @ 15 V	46 nC @ 15 V	-	+15V, -4V	1020 pF @ 600 V	1020 pF @ 600 V	-	-	136W (Tc)	-40°C ~ 175°C (TJ)	-	-	Surface Mount	TO-263-7	TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
SCT4062KW7HRTL 1200V, 24A, 7-PIN SMD, TRENCH-ST Rohm Semiconductor	3,669 In Stock	1 : $12.00000 Cut Tape (CT) 1,000 : $8.54999 Tape & Reel (TR)	-	-	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Active	N-Channel	SiCFET (Silicon Carbide)	1200 V	24A (Tc)	18V	81mOhm @ 12A, 18V	4.8V @ 6.45mA	64 nC @ 18 V	64 nC @ 18 V	-	+21V, -4V	1498 pF @ 800 V	1498 pF @ 800 V	-	-	93W	175°C (TJ)	Automotive	AEC-Q101	Surface Mount	TO-263-7L	TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
NVBG160N120SC1 SICFET N-CH 1200V 19.5A D2PAK onsemi	1,177 In Stock	1 : $12.17000 Cut Tape (CT) 800 : $5.94825 Tape & Reel (TR)	Tariff may apply if shipping to the United States	-	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Active	N-Channel	SiCFET (Silicon Carbide)	1200 V	19.5A (Tc)	20V	224mOhm @ 12A, 20V	4.3V @ 2.5mA	33.8 nC @ 20 V	33.8 nC @ 20 V	-	+25V, -15V	678 pF @ 800 V	678 pF @ 800 V	-	-	136W (Tc)	-55°C ~ 175°C (TJ)	Automotive	AEC-Q101	Surface Mount	D2PAK-7	TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
G3R160MT17D SIC MOSFET N-CH 21A TO247-3 GeneSiC Semiconductor	618 In Stock	1 : $12.24000 Tube	-	G3R™	Tube	Active	N-Channel	SiCFET (Silicon Carbide)	1700 V	21A (Tc)	15V	208mOhm @ 12A, 15V	2.7V @ 5mA	51 nC @ 15 V	51 nC @ 15 V	-	±15V	1272 pF @ 1000 V	1272 pF @ 1000 V	-	-	175W (Tc)	-55°C ~ 175°C (TJ)	-	-	Through Hole	TO-247-3	TO-247-3
IMBG40R015M2HXTMA1 SIC-MOS Infineon Technologies	1,081 In Stock	1 : $12.45000 Cut Tape (CT) 1,000 : $6.12588 Tape & Reel (TR)	-	CoolSiC™	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Active	N-Channel	SiCFET (Silicon Carbide)	400 V	11.7A (Ta), 111A (Tc)	15V, 18V	19.1mOhm @ 27.1A, 18V	5.6V @ 9.7mA	62 nC @ 18 V	62 nC @ 18 V	-	+23V, -7V	2730 pF @ 200 V	2730 pF @ 200 V	-	-	3.8W (Ta), 341W (Tc)	-55°C ~ 175°C (TJ)	-	-	Surface Mount	PG-TO263-7-11	TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
IMT65R020M2HXUMA1 SILICON CARBIDE MOSFET Infineon Technologies	1,254 In Stock	1 : $12.71000 Cut Tape (CT) 2,000 : $6.29363 Tape & Reel (TR)	-	CoolSiC™	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Active	N-Channel	SiCFET (Silicon Carbide)	650 V	105A (Tc)	15V, 20V	18mOhm @ 46.9A, 20V	5.6V @ 9.5mA	57 nC @ 18 V	57 nC @ 18 V	-	+23V, -7V	2038 pF @ 400 V	2038 pF @ 400 V	-	-	440W (Tc)	-55°C ~ 175°C (TJ)	-	-	Surface Mount	PG-HSOF-8-2	8-PowerSFN

Showing

of 1,416

Single FET, MOSFETs

Single Field Effect Transistors (FETs) and Metal-Oxide-Semiconductor Field-Effect Transistors (MOSFETs) are types of transistors used to amplify or switch electronic signals.

A Single FET operates by controlling the flow of electrical current between the source and drain terminals through an electric field generated by a voltage applied to the gate terminal. The main advantage of FETs is their high input impedance, which makes them ideal for use in signal amplification and analog circuits. They are widely used in applications such as amplifiers, oscillators, and buffer stages in electronic circuits.

MOSFETs, a subtype of FETs, have a gate terminal insulated from the channel by a thin oxide layer, enhancing their performance and making them highly efficient. MOSFETs can be further categorized into two types:

n-channel MOSFETs: where electrons are the primary carriers.
p-channel MOSFETs: where holes are the primary carriers.

MOSFETs are preferred in many applications due to their low power consumption, high-speed switching, and ability to handle large currents and voltages. They are crucial in digital and analog circuits, including power supplies, motor drivers, and radio-frequency applications.

The operation of MOSFETs can be broken down into two modes:

Enhancement Mode: In this mode, the MOSFET is normally off when the gate-source voltage is zero. It requires a positive gate-source voltage (for n-channel) or a negative gate-source voltage (for p-channel) to turn on.
Depletion Mode: In this mode, the MOSFET is normally on when the gate-source voltage is zero. Applying a gate-source voltage of opposite polarity can turn it off.

MOSFETs offer several advantages, such as:

High Efficiency: They consume very little power and can switch states rapidly, making them highly efficient for power management applications.
Low On-Resistance: They have low resistance when turned on, which minimizes power loss and heat generation.
High Input Impedance: The insulated gate structure results in extremely high input impedance, making them ideal for high-impedance signal amplification.

In summary, single FETs, particularly MOSFETs, are fundamental components in modern electronics, known for their efficiency, speed, and versatility in a wide range of applications from low-power signal amplification to high-power switching and control.

Single FET, MOSFETs

INFORMATION

HELP

CONTACT US

FOLLOW US