Single FETs, MOSFETs

Results: 4
Manufacturer
Diodes IncorporatedToshiba Semiconductor and StorageVishay Siliconix
Series
-TrenchFET® Gen IIIU-MOSVIII-H
Packaging
Cut Tape (CT)Digi-Reel®Tape & Reel (TR)
FET Type
N-ChannelP-Channel
Drain to Source Voltage (Vdss)
30 V40 V
Current - Continuous Drain (Id) @ 25°C
2.4A (Ta)10.5A (Ta)32A (Ta)60A (Tc)
Rds On (Max) @ Id, Vgs
5.5mOhm @ 15A, 10V11mOhm @ 20A, 10V11mOhm @ 5.5A, 10V80mOhm @ 4.2A, 10V
Vgs(th) (Max) @ Id
2.3V @ 100µA2.5V @ 250µA3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
7.5 nC @ 10 V12.2 nC @ 10 V26.7 nC @ 10 V111 nC @ 10 V
Vgs (Max)
±20V±25V
Input Capacitance (Ciss) (Max) @ Vds
587 pF @ 20 V660 pF @ 15 V1281 pF @ 15 V4380 pF @ 15 V
Power Dissipation (Max)
720mW (Ta)900mW (Ta)1.6W (Ta), 21W (Tc)65.8W (Tc)
Operating Temperature
-55°C ~ 150°C (TJ)150°C (TJ)
Supplier Device Package
8-SOP Advance (5x5)POWERDI3333-8PowerPAK® SO-8SOT-23-3
Package / Case
8-PowerVDFNPowerPAK® SO-8TO-236-3, SC-59, SOT-23-3
Stocking Options
Environmental Options
Media
Marketplace Product
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Mfr Part #
Quantity Available
Price
Series
Package
Product Status
FET Type
Technology
Drain to Source Voltage (Vdss)
Current - Continuous Drain (Id) @ 25°C
Drive Voltage (Max Rds On, Min Rds On)
Rds On (Max) @ Id, Vgs
Vgs(th) (Max) @ Id
Gate Charge (Qg) (Max) @ Vgs
Vgs (Max)
Input Capacitance (Ciss) (Max) @ Vds
FET Feature
Power Dissipation (Max)
Operating Temperature
Mounting Type
Supplier Device Package
Package / Case
PowerDI3333-8
DMG7430LFG-7
MOSFET N-CH 30V 10.5A PWRDI3333
Diodes Incorporated
85,682
In Stock
1 : $0.42000
Cut Tape (CT)
2,000 : $0.11239
Tape & Reel (TR)
-
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
30 V
10.5A (Ta)
4.5V, 10V
11mOhm @ 20A, 10V
2.5V @ 250µA
26.7 nC @ 10 V
±20V
1281 pF @ 15 V
-
900mW (Ta)
-55°C ~ 150°C (TJ)
Surface Mount
POWERDI3333-8
8-PowerVDFN
SOT-23-3
DMP4065S-7
MOSFET P-CH 40V 2.4A SOT23
Diodes Incorporated
22,421
In Stock
111,000
Factory
1 : $0.44000
Cut Tape (CT)
3,000 : $0.09690
Tape & Reel (TR)
-
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
P-Channel
MOSFET (Metal Oxide)
40 V
2.4A (Ta)
4.5V, 10V
80mOhm @ 4.2A, 10V
3V @ 250µA
12.2 nC @ 10 V
±20V
587 pF @ 20 V
-
720mW (Ta)
-55°C ~ 150°C (TJ)
Surface Mount
SOT-23-3
TO-236-3, SC-59, SOT-23-3
PowerPAK SO-8
SIR167DP-T1-GE3
MOSFET P-CH 30V 60A PPAK SO-8
Vishay Siliconix
10,734
In Stock
1 : $1.01000
Cut Tape (CT)
3,000 : $0.41883
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
P-Channel
MOSFET (Metal Oxide)
30 V
60A (Tc)
4.5V, 10V
5.5mOhm @ 15A, 10V
2.5V @ 250µA
111 nC @ 10 V
±25V
4380 pF @ 15 V
-
65.8W (Tc)
-55°C ~ 150°C (TJ)
Surface Mount
PowerPAK® SO-8
PowerPAK® SO-8
2,298
In Stock
1 : $0.53000
Cut Tape (CT)
3,000 : $0.25000
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
30 V
32A (Ta)
4.5V, 10V
11mOhm @ 5.5A, 10V
2.3V @ 100µA
7.5 nC @ 10 V
±20V
660 pF @ 15 V
-
1.6W (Ta), 21W (Tc)
150°C (TJ)
Surface Mount
8-SOP Advance (5x5)
8-PowerVDFN
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Single FETs, MOSFETs


Discrete Field Effect Transistors (FETs) are widely used in power conversion, motor control, solid-state lighting, and other applications where their characteristic ability to be switched on & off at high frequencies while carrying substantial amounts of current is advantageous. They are used almost universally for applications requiring voltage ratings of a few hundred volts or less, above which other device types such as IGBTs become more competitive.