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Mfr Part #
Quantity Available
Price
Series
Package
Product Status
FET Type
Technology
Drain to Source Voltage (Vdss)
Current - Continuous Drain (Id) @ 25°C
Drive Voltage (Max Rds On, Min Rds On)
Rds On (Max) @ Id, Vgs
Vgs(th) (Max) @ Id
Gate Charge (Qg) (Max) @ Vgs
Vgs (Max)
Input Capacitance (Ciss) (Max) @ Vds
FET Feature
Power Dissipation (Max)
Operating Temperature
Mounting Type
Supplier Device Package
Package / Case
TO-220-3
FDP075N15A-F102
MOSFET N-CH 150V 130A TO220-3
onsemi
871
In Stock
1 : $6.61000
Tube
Tube
ActiveN-ChannelMOSFET (Metal Oxide)150 V130A (Tc)10V7.5mOhm @ 100A, 10V4V @ 250µA100 nC @ 10 V±20V7350 pF @ 75 V-333W (Tc)-55°C ~ 175°C (TJ)Through HoleTO-220-3TO-220-3
8-PQFN
NTMFS034N15MC
MOSFET N-CH 150V 6.1A/31A 8PQFN
onsemi
1,215
In Stock
1 : $2.01000
Cut Tape (CT)
3,000 : $0.92071
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
ActiveN-ChannelMOSFET (Metal Oxide)150 V6.1A (Ta), 31A (Tc)-31mOhm @ 13A, 10V4.5V @ 70µA12 nC @ 10 V±20V905 pF @ 75 V-2.5W (Ta), 62.5W (Tc)-55°C ~ 150°C (TJ)Surface Mount8-PQFN (5x6)8-PowerTDFN
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Single FETs, MOSFETs


Discrete Field Effect Transistors (FETs) are widely used in power conversion, motor control, solid-state lighting, and other applications where their characteristic ability to be switched on & off at high frequencies while carrying substantial amounts of current is advantageous. They are used almost universally for applications requiring voltage ratings of a few hundred volts or less, above which other device types such as IGBTs become more competitive.