Single FETs, MOSFETs

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Mfr Part #	Quantity Available	Price	Series	Package	Product Status	FET Type	Technology	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)	Rds On (Max) @ Id, Vgs	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Vgs (Max)	Input Capacitance (Ciss) (Max) @ Vds	FET Feature	Power Dissipation (Max)	Operating Temperature	Grade	Qualification	Mounting Type	Supplier Device Package	Package / Case
SI2324A-TP MOSFET N-CH 100V 2A SOT23 MCC (Micro Commercial Components)	51,105 In Stock	1 : $0.42000 Cut Tape (CT) 3,000 : $0.08364 Tape & Reel (TR)	-	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Active	N-Channel	MOSFET (Metal Oxide)	100 V	2A (Tj)	4.5V, 10V	280mOhm @ 2A, 10V	2V @ 250µA	4.8 nC @ 4.5 V	±20V	520 pF @ 15 V	-	1.2W	-55°C ~ 150°C (TJ)	-	-	Surface Mount	SOT-23	TO-236-3, SC-59, SOT-23-3
IRLML6401TRPBF MOSFET P-CH 12V 4.3A SOT23 Infineon Technologies	74,367 In Stock	1 : $0.43000 Cut Tape (CT) 3,000 : $0.08715 Tape & Reel (TR)	HEXFET®	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Active	P-Channel	MOSFET (Metal Oxide)	12 V	4.3A (Ta)	1.8V, 4.5V	50mOhm @ 4.3A, 4.5V	950mV @ 250µA	15 nC @ 5 V	±8V	830 pF @ 10 V	-	1.3W (Ta)	-55°C ~ 150°C (TJ)	-	-	Surface Mount	Micro3™/SOT-23	TO-236-3, SC-59, SOT-23-3
SI01P10-TP MOSFET P-CH 100V 1A SOT23 MCC (Micro Commercial Components)	49,428 In Stock	1 : $0.50000 Cut Tape (CT) 3,000 : $0.11235 Tape & Reel (TR)	-	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Active	P-Channel	MOSFET (Metal Oxide)	100 V	1A (Tj)	-	800mOhm @ 1A, 10V	3V @ 250µA	3.2 nC @ 10 V	±20V	388 pF @ 40 V	-	770mW	-55°C ~ 150°C (TJ)	-	-	Surface Mount	SOT-23	TO-236-3, SC-59, SOT-23-3
BSC021N08NS5ATMA1 MOSFET TRENCH 80V TSON-8 Infineon Technologies	19 In Stock	1 : $4.40000 Cut Tape (CT) 5,000 : $1.81250 Tape & Reel (TR)	OptiMOS™ 5	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Active	N-Channel	MOSFET (Metal Oxide)	80 V	226A (Tc)	6V, 10V	2.1mOhm @ 50A, 10V	3.8V @ 146µA	117 nC @ 10 V	±20V	8600 pF @ 40 V	-	214W (Tc)	-55°C ~ 175°C (TJ)	-	-	Surface Mount	PG-TSON-8-3	8-PowerTDFN

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Discrete Field Effect Transistors (FETs) are widely used in power conversion, motor control, solid-state lighting, and other applications where their characteristic ability to be switched on & off at high frequencies while carrying substantial amounts of current is advantageous. They are used almost universally for applications requiring voltage ratings of a few hundred volts or less, above which other device types such as IGBTs become more competitive.