Single FETs, MOSFETs

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Mfr Part #	Quantity Available	Price	Tariff Status	Series	Package	Product Status	FET Type	Technology	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)	Rds On (Max) @ Id, Vgs	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Vgs (Max)	Input Capacitance (Ciss) (Max) @ Vds	FET Feature	Power Dissipation (Max)	Operating Temperature	Grade	Qualification	Mounting Type	Supplier Device Package	Package / Case
IPB600N25N3GATMA1 MOSFET N-CH 250V 25A D2PAK Infineon Technologies	1,766 In Stock	1 : $3.49000 Cut Tape (CT) 1,000 : $1.20398 Tape & Reel (TR)	-	OptiMOS™	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Active	N-Channel	MOSFET (Metal Oxide)	250 V	25A (Tc)	10V	60mOhm @ 25A, 10V	4V @ 90µA	29 nC @ 10 V	±20V	2350 pF @ 100 V	-	136W (Tc)	-55°C ~ 175°C (TJ)	-	-	Surface Mount	PG-TO263-3	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
PMV28ENER PMV28ENE/SOT23/TO-236AB Nexperia USA Inc.	4,520 In Stock	1 : $0.45000 Cut Tape (CT) 3,000 : $0.09690 Tape & Reel (TR)	Tariff may apply if shipping to the United States	-	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Active	N-Channel	MOSFET (Metal Oxide)	30 V	4.4A (Ta)	4.5V, 10V	37mOhm @ 4.4A, 10V	2.5V @ 250µA	8 nC @ 10 V	±20V	266 pF @ 15 V	-	660mW (Ta), 8.3W (Tc)	-55°C ~ 175°C (TJ)	-	-	Surface Mount	TO-236AB	TO-236-3, SC-59, SOT-23-3
IRF9640SPBF MOSFET P-CH 200V 11A D2PAK Vishay Siliconix	0 In Stock Check Lead Time	1 : $4.42000 Tube	Tariff may apply if shipping to the United States	-	Tube	Active	P-Channel	MOSFET (Metal Oxide)	200 V	11A (Tc)	10V	500mOhm @ 6.6A, 10V	4V @ 250µA	44 nC @ 10 V	±20V	1200 pF @ 25 V	-	3W (Ta), 125W (Tc)	-55°C ~ 150°C (TJ)	-	-	Surface Mount	TO-263 (D2PAK)	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

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Discrete Field Effect Transistors (FETs) are widely used in power conversion, motor control, solid-state lighting, and other applications where their characteristic ability to be switched on & off at high frequencies while carrying substantial amounts of current is advantageous. They are used almost universally for applications requiring voltage ratings of a few hundred volts or less, above which other device types such as IGBTs become more competitive.