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Results: 2
Series
HEXFET®OptiMOS™
Packaging
Cut Tape (CT)Digi-Reel®Tape & Reel (TR)
FET Type
N-ChannelP-Channel
Drain to Source Voltage (Vdss)
60 V100 V
Current - Continuous Drain (Id) @ 25°C
17A (Tc)35A (Tc)
Rds On (Max) @ Id, Vgs
38mOhm @ 35A, 10V90mOhm @ 9A, 10V
Vgs(th) (Max) @ Id
4V @ 1.7mA4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
37 nC @ 10 V63 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds
920 pF @ 25 V2500 pF @ 30 V
Power Dissipation (Max)
3.8W (Ta), 70W (Tc)125W (Tc)
Supplier Device Package
D2PAKPG-TO252-3
Package / Case
TO-252-3, DPAK (2 Leads + Tab), SC-63TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Stocking Options
Environmental Options
Media
Marketplace Product
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Mfr Part #
Quantity Available
Price
Series
Package
Product Status
FET Type
Technology
Drain to Source Voltage (Vdss)
Current - Continuous Drain (Id) @ 25°C
Drive Voltage (Max Rds On, Min Rds On)
Rds On (Max) @ Id, Vgs
Vgs(th) (Max) @ Id
Gate Charge (Qg) (Max) @ Vgs
Vgs (Max)
Input Capacitance (Ciss) (Max) @ Vds
FET Feature
Power Dissipation (Max)
Operating Temperature
Mounting Type
Supplier Device Package
Package / Case
TO252-3
IPD380P06NMATMA1
MOSFET P-CH 60V 35A TO252-3
Infineon Technologies
17,463
In Stock
1 : $1.16000
Cut Tape (CT)
2,500 : $0.69212
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
P-Channel
MOSFET (Metal Oxide)
60 V
35A (Tc)
10V
38mOhm @ 35A, 10V
4V @ 1.7mA
63 nC @ 10 V
±20V
2500 pF @ 30 V
-
125W (Tc)
-55°C ~ 175°C (TJ)
Surface Mount
PG-TO252-3
TO-252-3, DPAK (2 Leads + Tab), SC-63
TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
IRF530NSTRLPBF
MOSFET N-CH 100V 17A D2PAK
Infineon Technologies
3,821
In Stock
1 : $1.81000
Cut Tape (CT)
800 : $0.57619
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
100 V
17A (Tc)
10V
90mOhm @ 9A, 10V
4V @ 250µA
37 nC @ 10 V
±20V
920 pF @ 25 V
-
3.8W (Ta), 70W (Tc)
-55°C ~ 175°C (TJ)
Surface Mount
D2PAK
TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
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Single


Discrete Field Effect Transistors (FETs) are widely used in power conversion, motor control, solid-state lighting, and other applications where their characteristic ability to be switched on & off at high frequencies while carrying substantial amounts of current is advantageous. They are used almost universally for applications requiring voltage ratings of a few hundred volts or less, above which other device types such as IGBTs become more competitive.