Single FETs, MOSFETs

Results: 2
Manufacturer
Good-Ark Semiconductoronsemi
Packaging
Cut Tape (CT)Digi-Reel®Tape & Reel (TR)
FET Type
N-ChannelP-Channel
Current - Continuous Drain (Id) @ 25°C
750mA (Ta)4A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
1.5V, 4.5V1.8V, 4.5V
Rds On (Max) @ Id, Vgs
43mOhm @ 4A, 4.5V350mOhm @ 890mA, 4.5V
Vgs(th) (Max) @ Id
1V @ 250µA1.2V @ 250µA
Vgs (Max)
±6V±8V
Input Capacitance (Ciss) (Max) @ Vds
120 pF @ 16 V939 pF @ 10 V
Power Dissipation (Max)
310mW (Ta)1.4W
Supplier Device Package
SOT-23SOT-723
Package / Case
SOT-723TO-236-3, SC-59, SOT-23-3
Stocking Options
Environmental Options
Media
Marketplace Product
2Results

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Mfr Part #
Quantity Available
Price
Series
Package
Product Status
FET Type
Technology
Drain to Source Voltage (Vdss)
Current - Continuous Drain (Id) @ 25°C
Drive Voltage (Max Rds On, Min Rds On)
Rds On (Max) @ Id, Vgs
Vgs(th) (Max) @ Id
Gate Charge (Qg) (Max) @ Vgs
Vgs (Max)
Input Capacitance (Ciss) (Max) @ Vds
FET Feature
Power Dissipation (Max)
Operating Temperature
Mounting Type
Supplier Device Package
Package / Case
SOT-723_631AA
NTK3134NT5G
MOSFET N-CH 20V 750MA SOT723
onsemi
9,427
In Stock
1 : $0.34000
Cut Tape (CT)
8,000 : $0.05774
Tape & Reel (TR)
-
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
ActiveN-ChannelMOSFET (Metal Oxide)20 V750mA (Ta)1.5V, 4.5V350mOhm @ 890mA, 4.5V1.2V @ 250µA-±6V120 pF @ 16 V-310mW (Ta)-55°C ~ 150°C (TJ)Surface MountSOT-723SOT-723
BAT54
SSF2341E
MOSFET, P-CH, SINGLE, -4A, -20V,
Good-Ark Semiconductor
5,580
In Stock
1 : $0.39000
Cut Tape (CT)
3,000 : $0.07272
Tape & Reel (TR)
-
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
ActiveP-ChannelMOSFET (Metal Oxide)20 V4A (Tc)1.8V, 4.5V43mOhm @ 4A, 4.5V1V @ 250µA10 nC @ 4.5 V±8V939 pF @ 10 V-1.4W-55°C ~ 150°C (TJ)Surface MountSOT-23TO-236-3, SC-59, SOT-23-3
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Single FETs, MOSFETs


Discrete Field Effect Transistors (FETs) are widely used in power conversion, motor control, solid-state lighting, and other applications where their characteristic ability to be switched on & off at high frequencies while carrying substantial amounts of current is advantageous. They are used almost universally for applications requiring voltage ratings of a few hundred volts or less, above which other device types such as IGBTs become more competitive.