Single FETs, MOSFETs

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Mfr Part #	Quantity Available	Price	Tariff Status	Series	Package	Product Status	FET Type	Technology	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)	Rds On (Max) @ Id, Vgs	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Vgs (Max)	Input Capacitance (Ciss) (Max) @ Vds	FET Feature	Power Dissipation (Max)	Operating Temperature	Grade	Qualification	Mounting Type	Supplier Device Package	Package / Case
CSD19536KTT MOSFET N-CH 100V 200A DDPAK Texas Instruments	8,318 In Stock	1 : $5.12000 Cut Tape (CT) 500 : $2.17962 Tape & Reel (TR)	Tariff may apply if shipping to the United States	NexFET™	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Active	N-Channel	MOSFET (Metal Oxide)	100 V	200A (Ta)	6V, 10V	2.4mOhm @ 100A, 10V	3.2V @ 250µA	153 nC @ 10 V	±20V	12000 pF @ 50 V	-	375W (Tc)	-55°C ~ 175°C (TJ)	-	-	Surface Mount	TO-263 (DDPAK-3)	TO-263-4, D2PAK (3 Leads + Tab), TO-263AA
BSS123_R1_00001 SOT-23, MOSFET Panjit International Inc.	10,801 In Stock	1 : $0.20000 Cut Tape (CT) 3,000 : $0.03264 Tape & Reel (TR)	-	-	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Active	N-Channel	MOSFET (Metal Oxide)	100 V	170mA (Ta)	4.5V, 10V	6Ohm @ 170mA, 10V	2.5V @ 250µA	1.8 nC @ 10 V	±20V	45 pF @ 25 V	-	500mW (Ta)	-55°C ~ 150°C (TJ)	-	-	Surface Mount	SOT-23	TO-236-3, SC-59, SOT-23-3
SQJ454EP-T1_GE3 MOSFET N-CH 200V 13A PPAK SO-8 Vishay Siliconix	9,407 In Stock	1 : $1.51000 Cut Tape (CT) 3,000 : $0.50639 Tape & Reel (TR)	Tariff may apply if shipping to the United States	TrenchFET®	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Active	N-Channel	MOSFET (Metal Oxide)	200 V	13A (Tc)	4.5V, 10V	145mOhm @ 7.5A, 10V	2.5V @ 250µA	85 nC @ 10 V	±20V	2600 pF @ 25 V	-	68W (Tc)	-55°C ~ 175°C (TJ)	Automotive	AEC-Q101	Surface Mount	PowerPAK® SO-8	PowerPAK® SO-8

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Discrete Field Effect Transistors (FETs) are widely used in power conversion, motor control, solid-state lighting, and other applications where their characteristic ability to be switched on & off at high frequencies while carrying substantial amounts of current is advantageous. They are used almost universally for applications requiring voltage ratings of a few hundred volts or less, above which other device types such as IGBTs become more competitive.