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Mfr Part #
Quantity Available
Price
Series
Package
Product Status
FET Type
Technology
Drain to Source Voltage (Vdss)
Current - Continuous Drain (Id) @ 25°C
Drive Voltage (Max Rds On, Min Rds On)
Rds On (Max) @ Id, Vgs
Vgs(th) (Max) @ Id
Gate Charge (Qg) (Max) @ Vgs
Vgs (Max)
Input Capacitance (Ciss) (Max) @ Vds
FET Feature
Power Dissipation (Max)
Operating Temperature
Mounting Type
Supplier Device Package
Package / Case
TO-220AB PKG
IRLB8721PBF
MOSFET N-CH 30V 62A TO220AB
Infineon Technologies
21,214
In Stock
1 : $1.05000
Tube
Tube
ActiveN-ChannelMOSFET (Metal Oxide)30 V62A (Tc)4.5V, 10V8.7mOhm @ 31A, 10V2.35V @ 25µA13 nC @ 4.5 V±20V1077 pF @ 15 V-65W (Tc)-55°C ~ 175°C (TJ)Through HoleTO-220ABTO-220-3
TO-92-3(StandardBody),TO-226_straightlead
TN0702N3-G
MOSFET N-CH 20V 530MA TO92-3
Microchip Technology
3,213
In Stock
1 : $1.52000
Bag
-
Bag
ActiveN-ChannelMOSFET (Metal Oxide)20 V530mA (Tj)2V, 5V1.3Ohm @ 500mA, 5V1V @ 1mA-±20V200 pF @ 20 V-1W (Tc)-55°C ~ 150°C (TJ)Through HoleTO-92-3TO-226-3, TO-92-3 (TO-226AA)
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Single FETs, MOSFETs


Discrete Field Effect Transistors (FETs) are widely used in power conversion, motor control, solid-state lighting, and other applications where their characteristic ability to be switched on & off at high frequencies while carrying substantial amounts of current is advantageous. They are used almost universally for applications requiring voltage ratings of a few hundred volts or less, above which other device types such as IGBTs become more competitive.