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Mfr Part #	Quantity Available	Price	Series	Package	Product Status	FET Type	Technology	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)	Rds On (Max) @ Id, Vgs	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Vgs (Max)	Input Capacitance (Ciss) (Max) @ Vds	FET Feature	Power Dissipation (Max)	Operating Temperature	Grade	Qualification	Mounting Type	Supplier Device Package	Package / Case

BSS138 MOSFET N-CH 50V 220MA SOT23-3 onsemi	195,738 In Stock	1 : $0.27000 Cut Tape (CT) 3,000 : $0.05619 Tape & Reel (TR)	-	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Active	N-Channel	MOSFET (Metal Oxide)	50 V	220mA (Ta)	4.5V, 10V	3Ohm @ 500mA, 10V	1.6V @ 250µA	2.4 nC @ 10 V	±20V	27 pF @ 25 V	-	350mW (Ta)	150°C (TJ)	-	-	Surface Mount	SOT-23-3	TO-236-3, SC-59, SOT-23-3
BSS138BK,215 MOSFET N-CH 60V 360MA TO236AB Nexperia USA Inc.	445,601 In Stock	1 : $0.35000 Cut Tape (CT) 3,000 : $0.05824 Tape & Reel (TR)	TrenchMOS™	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Active	N-Channel	MOSFET (Metal Oxide)	60 V	360mA (Ta)	10V	1.6Ohm @ 350mA, 10V	1.6V @ 250µA	0.7 nC @ 4.5 V	±20V	56 pF @ 10 V	-	350mW (Ta), 1.14W (Tc)	-55°C ~ 150°C (TJ)	Automotive	AEC-Q101	Surface Mount	TO-236AB	TO-236-3, SC-59, SOT-23-3
SI1308EDL-T1-GE3 MOSFET N-CH 30V 1.4A SOT323 Vishay Siliconix	34,253 In Stock	1 : $0.44000 Cut Tape (CT) 3,000 : $0.11855 Tape & Reel (TR)	TrenchFET®	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Active	N-Channel	MOSFET (Metal Oxide)	30 V	1.4A (Tc)	2.5V, 10V	132mOhm @ 1.4A, 10V	1.5V @ 250µA	4.1 nC @ 10 V	±12V	105 pF @ 15 V	-	400mW (Ta), 500mW (Tc)	-55°C ~ 150°C (TJ)	-	-	Surface Mount	SC-70-3	SC-70, SOT-323
CSD17318Q2 MOSFET N-CH 30V 25A 6WSON Texas Instruments	10,052 In Stock	1 : $0.49000 Cut Tape (CT) 3,000 : $0.13162 Tape & Reel (TR)	NexFET™	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Active	N-Channel	MOSFET (Metal Oxide)	30 V	25A (Tc)	2.5V, 8V	15.1mOhm @ 8A, 8V	1.2V @ 250µA	6 nC @ 4.5 V	±10V	879 pF @ 15 V	-	16W (Tc)	-55°C ~ 150°C (TJ)	-	-	Surface Mount	6-WSON (2x2)	6-WDFN Exposed Pad

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Discrete Field Effect Transistors (FETs) are widely used in power conversion, motor control, solid-state lighting, and other applications where their characteristic ability to be switched on & off at high frequencies while carrying substantial amounts of current is advantageous. They are used almost universally for applications requiring voltage ratings of a few hundred volts or less, above which other device types such as IGBTs become more competitive.