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Mfr Part #	Quantity Available	Price	Series	Package	Product Status	FET Type	Technology	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)	Rds On (Max) @ Id, Vgs	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Vgs (Max)	Input Capacitance (Ciss) (Max) @ Vds	FET Feature	Power Dissipation (Max)	Operating Temperature	Grade	Qualification	Mounting Type	Supplier Device Package	Package / Case

BSZ097N04LSGATMA1 MOSFET N-CH 40V 12A/40A 8TSDSON Infineon Technologies	8,574 In Stock	1 : $1.34000 Cut Tape (CT) 5,000 : $0.32728 Tape & Reel (TR)	OptiMOS™	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Active	N-Channel	MOSFET (Metal Oxide)	40 V	12A (Ta), 40A (Tc)	4.5V, 10V	9.7mOhm @ 20A, 10V	2V @ 14µA	24 nC @ 10 V	±20V	1900 pF @ 20 V	-	2.1W (Ta), 35W (Tc)	-55°C ~ 150°C (TJ)	-	-	Surface Mount	PG-TSDSON-8	8-PowerTDFN
ISC027N10NM6ATMA1 TRENCH >=100V PG-TDSON-8 Infineon Technologies	7,876 In Stock	1 : $4.54000 Cut Tape (CT) 5,000 : $1.66062 Tape & Reel (TR)	OptiMOS™ 6	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Active	N-Channel	MOSFET (Metal Oxide)	100 V	23A (Ta), 192A (Tc)	8V, 10V	2.7mOhm @ 50A, 10V	3.3V @ 116µA	72.5 nC @ 10 V	±20V	5500 pF @ 50 V	-	3W (Ta), 217W (Tc)	-55°C ~ 175°C (TJ)	-	-	Surface Mount	PG-TDSON-8 FL	8-PowerTDFN
BUK9875-100A/CUX MOSFET N-CH 100V 7A SOT223 Nexperia USA Inc.	32,443 In Stock	1 : $0.83000 Cut Tape (CT) 1,000 : $0.32095 Tape & Reel (TR)	TrenchMOS™	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Active	N-Channel	MOSFET (Metal Oxide)	100 V	7A (Tc)	4.5V, 10V	72mOhm @ 8A, 10V	2V @ 1mA	-	±10V	1690 pF @ 25 V	-	8W (Tc)	-55°C ~ 150°C (TJ)	Automotive	AEC-Q101	Surface Mount	SOT-223	TO-261-4, TO-261AA

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Discrete Field Effect Transistors (FETs) are widely used in power conversion, motor control, solid-state lighting, and other applications where their characteristic ability to be switched on & off at high frequencies while carrying substantial amounts of current is advantageous. They are used almost universally for applications requiring voltage ratings of a few hundred volts or less, above which other device types such as IGBTs become more competitive.