Single FETs, MOSFETs

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Mfr Part #	Quantity Available	Price	Tariff Status	Series	Package	Product Status	FET Type	Technology	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)	Rds On (Max) @ Id, Vgs	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Vgs (Max)	Input Capacitance (Ciss) (Max) @ Vds	FET Feature	Power Dissipation (Max)	Operating Temperature	Grade	Qualification	Mounting Type	Supplier Device Package	Package / Case
BUK98180-100A/CUX MOSFET N-CH 100V 4.6A SOT223 Nexperia USA Inc.	47,816 In Stock	1 : $0.53000 Cut Tape (CT) 1,000 : $0.21285 Tape & Reel (TR)	Tariff may apply if shipping to the United States	TrenchMOS™	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Active	N-Channel	MOSFET (Metal Oxide)	100 V	4.6A (Tc)	4.5V, 10V	173mOhm @ 5A, 10V	2V @ 1mA	-	±10V	619 pF @ 25 V	-	8W (Tc)	-55°C ~ 150°C (TJ)	Automotive	AEC-Q101	Surface Mount	SOT-223	TO-261-4, TO-261AA
FQT7N10LTF MOSFET N-CH 100V 1.7A SOT223-4 onsemi	9,708 In Stock	1 : $0.97000 Cut Tape (CT) 4,000 : $0.24786 Tape & Reel (TR)	-	QFET®	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Last Time Buy	N-Channel	MOSFET (Metal Oxide)	100 V	1.7A (Tc)	5V, 10V	350mOhm @ 850mA, 10V	2V @ 250µA	6 nC @ 5 V	±20V	290 pF @ 25 V	-	2W (Tc)	-55°C ~ 150°C (TJ)	-	-	Surface Mount	SOT-223-4	TO-261-4, TO-261AA
FDT86102LZ MOSFET N-CH 100V 6.6A SOT223-4 onsemi	4,220 In Stock	1 : $1.69000 Cut Tape (CT) 4,000 : $0.37240 Tape & Reel (TR)	-	PowerTrench®	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Active	N-Channel	MOSFET (Metal Oxide)	100 V	6.6A (Ta)	4.5V, 10V	28mOhm @ 6.6A, 10V	3V @ 250µA	25 nC @ 10 V	±20V	1490 pF @ 50 V	-	2.2W (Ta)	-55°C ~ 150°C (TJ)	-	-	Surface Mount	SOT-223-4	TO-261-4, TO-261AA

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Discrete Field Effect Transistors (FETs) are widely used in power conversion, motor control, solid-state lighting, and other applications where their characteristic ability to be switched on & off at high frequencies while carrying substantial amounts of current is advantageous. They are used almost universally for applications requiring voltage ratings of a few hundred volts or less, above which other device types such as IGBTs become more competitive.