Single FETs, MOSFETs

Results: 5
Manufacturer
Infineon TechnologiesonsemiVishay Siliconix
Series
-HEXFET®TrenchFET®
Packaging
Cut Tape (CT)Digi-Reel®Tape & Reel (TR)
Product Status
ActiveLast Time Buy
FET Type
N-ChannelP-Channel
Drain to Source Voltage (Vdss)
20 V25 V60 V75 V100 V
Current - Continuous Drain (Id) @ 25°C
680mA (Ta)1.6A (Tc)4.2A (Ta)6.9A (Ta)75A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
2.5V, 4.5V2.7V, 4.5V4.5V, 10V10V
Rds On (Max) @ Id, Vgs
9.4mOhm @ 53A, 10V26mOhm @ 4.1A, 10V45mOhm @ 4.2A, 4.5V345mOhm @ 1.25A, 10V450mOhm @ 500mA, 4.5V
Vgs(th) (Max) @ Id
1.2V @ 250µA1.5V @ 250µA3V @ 250µA4V @ 250µA5.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
2.3 nC @ 4.5 V4.1 nC @ 4.5 V12 nC @ 5 V61 nC @ 10 V110 nC @ 10 V
Vgs (Max)
±8V±12V±20V
Input Capacitance (Ciss) (Max) @ Vds
50 pF @ 10 V210 pF @ 30 V740 pF @ 15 V3180 pF @ 25 V3270 pF @ 25 V
Power Dissipation (Max)
350mW (Ta)1W (Ta), 1.7W (Tc)1.25W (Ta)2.5W (Ta)170W (Tc)
Operating Temperature
-55°C ~ 150°C (TJ)-55°C ~ 175°C (TJ)
Supplier Device Package
8-SOD2PAKMicro3™/SOT-23SOT-23-3SOT-23-3 (TO-236)
Package / Case
8-SOIC (0.154", 3.90mm Width)TO-236-3, SC-59, SOT-23-3TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Stocking Options
Environmental Options
Media
Marketplace Product
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Mfr Part #
Quantity Available
Price
Series
Package
Product Status
FET Type
Technology
Drain to Source Voltage (Vdss)
Current - Continuous Drain (Id) @ 25°C
Drive Voltage (Max Rds On, Min Rds On)
Rds On (Max) @ Id, Vgs
Vgs(th) (Max) @ Id
Gate Charge (Qg) (Max) @ Vgs
Vgs (Max)
Input Capacitance (Ciss) (Max) @ Vds
FET Feature
Power Dissipation (Max)
Operating Temperature
Mounting Type
Supplier Device Package
Package / Case
SOT-23-3
FDV303N
MOSFET N-CH 25V 680MA SOT23
onsemi
402,242
In Stock
1 : $0.34000
Cut Tape (CT)
3,000 : $0.07270
Tape & Reel (TR)
-
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
25 V
680mA (Ta)
2.7V, 4.5V
450mOhm @ 500mA, 4.5V
1.5V @ 250µA
2.3 nC @ 4.5 V
±8V
50 pF @ 10 V
-
350mW (Ta)
-55°C ~ 150°C (TJ)
Surface Mount
SOT-23-3
TO-236-3, SC-59, SOT-23-3
SOT-23-3
SI2309CDS-T1-E3
MOSFET P-CH 60V 1.6A SOT23-3
Vishay Siliconix
15,459
In Stock
1 : $0.53000
Cut Tape (CT)
3,000 : $0.17877
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
P-Channel
MOSFET (Metal Oxide)
60 V
1.6A (Tc)
4.5V, 10V
345mOhm @ 1.25A, 10V
3V @ 250µA
4.1 nC @ 4.5 V
±20V
210 pF @ 30 V
-
1W (Ta), 1.7W (Tc)
-55°C ~ 150°C (TJ)
Surface Mount
SOT-23-3 (TO-236)
TO-236-3, SC-59, SOT-23-3
SOT-23-3
IRLML2502TRPBF
MOSFET N-CH 20V 4.2A SOT23
Infineon Technologies
69,931
In Stock
1 : $0.62000
Cut Tape (CT)
3,000 : $0.14251
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
20 V
4.2A (Ta)
2.5V, 4.5V
45mOhm @ 4.2A, 4.5V
1.2V @ 250µA
12 nC @ 5 V
±12V
740 pF @ 15 V
-
1.25W (Ta)
-55°C ~ 150°C (TJ)
Surface Mount
Micro3™/SOT-23
TO-236-3, SC-59, SOT-23-3
IRF7473TRPBF
MOSFET N-CH 100V 6.9A 8SO
Infineon Technologies
9,774
In Stock
1 : $2.11000
Cut Tape (CT)
4,000 : $0.58375
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Last Time Buy
N-Channel
MOSFET (Metal Oxide)
100 V
6.9A (Ta)
10V
26mOhm @ 4.1A, 10V
5.5V @ 250µA
61 nC @ 10 V
±20V
3180 pF @ 25 V
-
2.5W (Ta)
-55°C ~ 150°C (TJ)
Surface Mount
8-SO
8-SOIC (0.154", 3.90mm Width)
TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
IRF2807ZSTRLPBF
MOSFET N-CH 75V 75A D2PAK
Infineon Technologies
798
In Stock
1 : $3.10000
Cut Tape (CT)
800 : $1.07383
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Last Time Buy
N-Channel
MOSFET (Metal Oxide)
75 V
75A (Tc)
10V
9.4mOhm @ 53A, 10V
4V @ 250µA
110 nC @ 10 V
±20V
3270 pF @ 25 V
-
170W (Tc)
-55°C ~ 175°C (TJ)
Surface Mount
D2PAK
TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
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Single FETs, MOSFETs

Discrete Field Effect Transistors (FETs) are widely used in power conversion, motor control, solid-state lighting, and other applications where their characteristic ability to be switched on & off at high frequencies while carrying substantial amounts of current is advantageous. They are used almost universally for applications requiring voltage ratings of a few hundred volts or less, above which other device types such as IGBTs become more competitive.