Single FETs, MOSFETs

Results: 2
Manufacturer
Diodes IncorporatedInfineon Technologies
Series
-OptiMOS™
Packaging
Cut Tape (CT)Digi-Reel®Tape & Reel (TR)
Drain to Source Voltage (Vdss)
30 V60 V
Current - Continuous Drain (Id) @ 25°C
3.6A (Ta)100A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
4.5V, 10V6V, 10V
Rds On (Max) @ Id, Vgs
3.4mOhm @ 50A, 10V50mOhm @ 3.6A, 10V
Vgs(th) (Max) @ Id
2V @ 250µA3.3V @ 41µA
Gate Charge (Qg) (Max) @ Vgs
11.2 nC @ 10 V41 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds
495 pF @ 15 V3000 pF @ 30 V
Power Dissipation (Max)
770mW (Ta)2.5W (Ta), 74W (Tc)
Supplier Device Package
PG-TDSON-8-7SOT-23-3
Package / Case
8-PowerTDFNTO-236-3, SC-59, SOT-23-3
Stocking Options
Environmental Options
Media
Marketplace Product
2Results

Showing
of 2
Mfr Part #
Quantity Available
Price
Series
Package
Product Status
FET Type
Technology
Drain to Source Voltage (Vdss)
Current - Continuous Drain (Id) @ 25°C
Drive Voltage (Max Rds On, Min Rds On)
Rds On (Max) @ Id, Vgs
Vgs(th) (Max) @ Id
Gate Charge (Qg) (Max) @ Vgs
Vgs (Max)
Input Capacitance (Ciss) (Max) @ Vds
FET Feature
Power Dissipation (Max)
Operating Temperature
Mounting Type
Supplier Device Package
Package / Case
SOT-23-3
DMG3406L-13
MOSFET N-CH 30V 3.6A SOT23
Diodes Incorporated
110,850
In Stock
1 : $0.25000
Cut Tape (CT)
10,000 : $0.05740
Tape & Reel (TR)
-
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
30 V
3.6A (Ta)
4.5V, 10V
50mOhm @ 3.6A, 10V
2V @ 250µA
11.2 nC @ 10 V
±20V
495 pF @ 15 V
-
770mW (Ta)
-55°C ~ 150°C (TJ)
Surface Mount
SOT-23-3
TO-236-3, SC-59, SOT-23-3
8-Power TDFN
BSC034N06NSATMA1
MOSFET N-CH 60V 100A TDSON
Infineon Technologies
11,188
In Stock
1 : $2.53000
Cut Tape (CT)
5,000 : $0.75750
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
60 V
100A (Tc)
6V, 10V
3.4mOhm @ 50A, 10V
3.3V @ 41µA
41 nC @ 10 V
±20V
3000 pF @ 30 V
-
2.5W (Ta), 74W (Tc)
-55°C ~ 150°C (TJ)
Surface Mount
PG-TDSON-8-7
8-PowerTDFN
Showing
of 2

Single FETs, MOSFETs


Discrete Field Effect Transistors (FETs) are widely used in power conversion, motor control, solid-state lighting, and other applications where their characteristic ability to be switched on & off at high frequencies while carrying substantial amounts of current is advantageous. They are used almost universally for applications requiring voltage ratings of a few hundred volts or less, above which other device types such as IGBTs become more competitive.