Single FETs, MOSFETs

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Mfr Part #	Quantity Available	Price	Tariff Status	Series	Package	Product Status	FET Type	Technology	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)	Rds On (Max) @ Id, Vgs	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Vgs (Max)	Input Capacitance (Ciss) (Max) @ Vds	FET Feature	Power Dissipation (Max)	Operating Temperature	Grade	Qualification	Mounting Type	Supplier Device Package	Package / Case
G3R12MT12K 1200V 12M TO-247-4 G3R SIC MOSFE GeneSiC Semiconductor	61 In Stock	1 : $62.01000 Tube	-	-	Tube	Active	N-Channel	SiCFET (Silicon Carbide)	1200 V	157A (Tc)	15V, 18V	13mOhm @ 100A, 18V	2.7V @ 50mA	288 nC @ 15 V	+22V, -10V	9335 pF @ 800 V	-	567W (Tc)	-55°C ~ 175°C (TJ)	-	-	Through Hole	TO-247-4	TO-247-4
G2R50MT33K 3300V 50M TO-247-4 SIC MOSFET GeneSiC Semiconductor	499 In Stock	1 : $295.67000 Tube	-	G2R™	Tube	Active	N-Channel	SiCFET (Silicon Carbide)	3300 V	63A (Tc)	20V	50mOhm @ 40A, 20V	3.5V @ 10mA (Typ)	340 nC @ 20 V	+25V, -10V	7301 pF @ 1000 V	-	536W (Tc)	-55°C ~ 175°C (TJ)	-	-	Through Hole	TO-247-4	TO-247-4
G3R45MT17D SIC MOSFET N-CH 61A TO247-3 GeneSiC Semiconductor	241 In Stock	1 : $32.73000 Tube	Tariff may apply if shipping to the United States	G3R™	Tube	Active	N-Channel	SiCFET (Silicon Carbide)	1700 V	61A (Tc)	15V	58mOhm @ 40A, 15V	2.7V @ 8mA	182 nC @ 15 V	±15V	4523 pF @ 1000 V	-	438W (Tc)	-55°C ~ 175°C (TJ)	-	-	Through Hole	TO-247-3	TO-247-3
MSC015SMA070B4 TRANS SJT N-CH 700V 140A TO247-4 Microchip Technology	64 In Stock	1 : $36.84000 Tube	-	-	Tube	Active	N-Channel	SiCFET (Silicon Carbide)	700 V	140A (Tc)	20V	19mOhm @ 40A, 20V	2.4V @ 4mA	215 nC @ 20 V	+23V, -10V	4500 pF @ 700 V	-	455W (Tc)	-55°C ~ 175°C (TJ)	-	-	Through Hole	TO-247-4	TO-247-4
G3R20MT17N SIC MOSFET N-CH 100A SOT227 GeneSiC Semiconductor	14 In Stock	1 : $135.46000 Tube	-	G3R™	Tube	Active	N-Channel	SiCFET (Silicon Carbide)	1700 V	100A (Tc)	15V	26mOhm @ 75A, 15V	2.7V @ 15mA	400 nC @ 15 V	±15V	10187 pF @ 1000 V	-	523W (Tc)	-55°C ~ 175°C (TJ)	-	-	Chassis Mount	SOT-227	SOT-227-4, miniBLOC
G2R120MT33J SIC MOSFET N-CH TO263-7 GeneSiC Semiconductor	0 In Stock Check Lead Time	250 : $91.94124 Tube	-	G2R™	Tube	Active	N-Channel	SiCFET (Silicon Carbide)	3300 V	35A	20V	156mOhm @ 20A, 20V	-	145 nC @ 20 V	+25V, -10V	3706 pF @ 1000 V	-	-	-55°C ~ 175°C (TJ)	-	-	Surface Mount	TO-263-7	TO-263-8, D2PAK (7 Leads + Tab), TO-263CA

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Discrete Field Effect Transistors (FETs) are widely used in power conversion, motor control, solid-state lighting, and other applications where their characteristic ability to be switched on & off at high frequencies while carrying substantial amounts of current is advantageous. They are used almost universally for applications requiring voltage ratings of a few hundred volts or less, above which other device types such as IGBTs become more competitive.