Single FETs, MOSFETs

Results: 3
Manufacturer
Infineon TechnologiesMicrochip TechnologyVishay Siliconix
Series
-HEXFET®
Packaging
BagTube
Drain to Source Voltage (Vdss)
20 V30 V100 V
Current - Continuous Drain (Id) @ 25°C
530mA (Tj)28A (Tc)62A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
2V, 5V4V, 5V4.5V, 10V
Rds On (Max) @ Id, Vgs
8.7mOhm @ 31A, 10V77mOhm @ 17A, 5V1.3Ohm @ 500mA, 5V
Vgs(th) (Max) @ Id
1V @ 1mA2V @ 250µA2.35V @ 25µA
Gate Charge (Qg) (Max) @ Vgs
13 nC @ 4.5 V64 nC @ 5 V
Vgs (Max)
±10V±20V
Input Capacitance (Ciss) (Max) @ Vds
200 pF @ 20 V1077 pF @ 15 V2200 pF @ 25 V
Power Dissipation (Max)
1W (Tc)65W (Tc)150W (Tc)
Operating Temperature
-55°C ~ 150°C (TJ)-55°C ~ 175°C (TJ)
Supplier Device Package
TO-220ABTO-92-3
Package / Case
TO-220-3TO-226-3, TO-92-3 (TO-226AA)
Stocking Options
Environmental Options
Media
Marketplace Product
3Results

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Mfr Part #
Quantity Available
Price
Series
Package
Product Status
FET Type
Technology
Drain to Source Voltage (Vdss)
Current - Continuous Drain (Id) @ 25°C
Drive Voltage (Max Rds On, Min Rds On)
Rds On (Max) @ Id, Vgs
Vgs(th) (Max) @ Id
Gate Charge (Qg) (Max) @ Vgs
Vgs (Max)
Input Capacitance (Ciss) (Max) @ Vds
FET Feature
Power Dissipation (Max)
Operating Temperature
Mounting Type
Supplier Device Package
Package / Case
TO-220AB PKG
IRLB8721PBF
MOSFET N-CH 30V 62A TO220AB
Infineon Technologies
17,299
In Stock
1 : $1.05000
Tube
Tube
ActiveN-ChannelMOSFET (Metal Oxide)30 V62A (Tc)4.5V, 10V8.7mOhm @ 31A, 10V2.35V @ 25µA13 nC @ 4.5 V±20V1077 pF @ 15 V-65W (Tc)-55°C ~ 175°C (TJ)Through HoleTO-220ABTO-220-3
TO-92-3(StandardBody),TO-226_straightlead
TN0702N3-G
MOSFET N-CH 20V 530MA TO92-3
Microchip Technology
1,073
In Stock
1 : $1.52000
Bag
-
Bag
ActiveN-ChannelMOSFET (Metal Oxide)20 V530mA (Tj)2V, 5V1.3Ohm @ 500mA, 5V1V @ 1mA-±20V200 pF @ 20 V-1W (Tc)-55°C ~ 150°C (TJ)Through HoleTO-92-3TO-226-3, TO-92-3 (TO-226AA)
TO-220AB
IRL540PBF
MOSFET N-CH 100V 28A TO220AB
Vishay Siliconix
0
In Stock
Check Lead Time
1 : $2.42000
Tube
-
Tube
ActiveN-ChannelMOSFET (Metal Oxide)100 V28A (Tc)4V, 5V77mOhm @ 17A, 5V2V @ 250µA64 nC @ 5 V±10V2200 pF @ 25 V-150W (Tc)-55°C ~ 175°C (TJ)Through HoleTO-220ABTO-220-3
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Single FETs, MOSFETs


Discrete Field Effect Transistors (FETs) are widely used in power conversion, motor control, solid-state lighting, and other applications where their characteristic ability to be switched on & off at high frequencies while carrying substantial amounts of current is advantageous. They are used almost universally for applications requiring voltage ratings of a few hundred volts or less, above which other device types such as IGBTs become more competitive.