Single FETs, MOSFETs

Results: 4
Manufacturer
EPCInfineon TechnologiesVishay Siliconix
Series
eGaN®HEXFET®TrenchFET®
Packaging
Cut Tape (CT)Digi-Reel®Tape & Reel (TR)
Product Status
ActiveNot For New Designs
FET Type
N-ChannelP-Channel
Technology
GaNFET (Gallium Nitride)MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
30 V60 V80 V
Current - Continuous Drain (Id) @ 25°C
3A (Ta)18A (Tc)30A (Tc)90A (Ta)
Drive Voltage (Max Rds On, Min Rds On)
4.5V, 10V5V10V
Rds On (Max) @ Id, Vgs
2.2mOhm @ 31A, 5V13mOhm @ 10A, 10V21mOhm @ 10A, 10V98mOhm @ 3A, 10V
Vgs(th) (Max) @ Id
2.5V @ 16mA2.5V @ 250µA3.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
14 nC @ 10 V16 nC @ 5 V21 nC @ 10 V35 nC @ 10 V
Vgs (Max)
+6V, -4V±20V
Input Capacitance (Ciss) (Max) @ Vds
510 pF @ 25 V1358 pF @ 40 V1700 pF @ 25 V1780 pF @ 30 V
Power Dissipation (Max)
1.25W (Ta)48W (Tc)62.5W (Tc)-
Operating Temperature
-55°C ~ 150°C (TJ)-55°C ~ 175°C (TJ)-40°C ~ 150°C (TJ)
Supplier Device Package
DieMicro3™/SOT-23PowerPAK® 1212-8PowerPAK® SO-8
Package / Case
DiePowerPAK® 1212-8PowerPAK® SO-8TO-236-3, SC-59, SOT-23-3
Stocking Options
Environmental Options
Media
Marketplace Product
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Mfr Part #
Quantity Available
Price
Series
Package
Product Status
FET Type
Technology
Drain to Source Voltage (Vdss)
Current - Continuous Drain (Id) @ 25°C
Drive Voltage (Max Rds On, Min Rds On)
Rds On (Max) @ Id, Vgs
Vgs(th) (Max) @ Id
Gate Charge (Qg) (Max) @ Vgs
Vgs (Max)
Input Capacitance (Ciss) (Max) @ Vds
FET Feature
Power Dissipation (Max)
Operating Temperature
Grade
Qualification
Mounting Type
Supplier Device Package
Package / Case
SOT-23-3
IRLML5203TRPBF
MOSFET P-CH 30V 3A MICRO3/SOT23
Infineon Technologies
67,973
In Stock
1 : $0.46000
Cut Tape (CT)
3,000 : $0.12535
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
P-Channel
MOSFET (Metal Oxide)
30 V
3A (Ta)
4.5V, 10V
98mOhm @ 3A, 10V
2.5V @ 250µA
14 nC @ 10 V
±20V
510 pF @ 25 V
-
1.25W (Ta)
-55°C ~ 150°C (TJ)
-
-
Surface Mount
Micro3™/SOT-23
TO-236-3, SC-59, SOT-23-3
PowerPak SO-8L
SQJA00EP-T1_GE3
MOSFET N-CH 60V 30A PPAK SO-8
Vishay Siliconix
3,798
In Stock
1 : $0.94000
Cut Tape (CT)
3,000 : $0.39030
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
60 V
30A (Tc)
10V
13mOhm @ 10A, 10V
3.5V @ 250µA
35 nC @ 10 V
±20V
1700 pF @ 25 V
-
48W (Tc)
-55°C ~ 175°C (TJ)
Automotive
AEC-Q101
Surface Mount
PowerPAK® SO-8
PowerPAK® SO-8
eGaN Series
EPC2020
GANFET N-CH 60V 90A DIE
EPC
2,789
In Stock
1 : $8.22000
Cut Tape (CT)
500 : $5.18130
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Not For New Designs
N-Channel
GaNFET (Gallium Nitride)
60 V
90A (Ta)
5V
2.2mOhm @ 31A, 5V
2.5V @ 16mA
16 nC @ 5 V
+6V, -4V
1780 pF @ 30 V
-
-
-40°C ~ 150°C (TJ)
-
-
Surface Mount
Die
Die
PowerPAK 1212-8
SQSA80ENW-T1_GE3
MOSFET N-CH 80V 18A PPAK1212-8
Vishay Siliconix
10,621
In Stock
1 : $1.06000
Cut Tape (CT)
3,000 : $0.44034
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
80 V
18A (Tc)
4.5V, 10V
21mOhm @ 10A, 10V
2.5V @ 250µA
21 nC @ 10 V
±20V
1358 pF @ 40 V
-
62.5W (Tc)
-55°C ~ 175°C (TJ)
Automotive
AEC-Q101
Surface Mount
PowerPAK® 1212-8
PowerPAK® 1212-8
Showing
of 4

Single FETs, MOSFETs


Discrete Field Effect Transistors (FETs) are widely used in power conversion, motor control, solid-state lighting, and other applications where their characteristic ability to be switched on & off at high frequencies while carrying substantial amounts of current is advantageous. They are used almost universally for applications requiring voltage ratings of a few hundred volts or less, above which other device types such as IGBTs become more competitive.