Single FETs, MOSFETs

Results: 8
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Mfr Part #
Quantity Available
Price
Series
Package
Product Status
FET Type
Technology
Drain to Source Voltage (Vdss)
Current - Continuous Drain (Id) @ 25°C
Drive Voltage (Max Rds On, Min Rds On)
Rds On (Max) @ Id, Vgs
Vgs(th) (Max) @ Id
Gate Charge (Qg) (Max) @ Vgs
Vgs (Max)
Input Capacitance (Ciss) (Max) @ Vds
FET Feature
Power Dissipation (Max)
Operating Temperature
Mounting Type
Supplier Device Package
Package / Case
SOT 23-3
NTR4003NT1G
MOSFET N-CH 30V 500MA SOT23-3
onsemi
247,767
In Stock
1 : $0.28000
Cut Tape (CT)
3,000 : $0.05790
Tape & Reel (TR)
-
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
30 V
500mA (Ta)
2.5V, 4V
1.5Ohm @ 10mA, 4V
1.4V @ 250µA
1.15 nC @ 5 V
±20V
21 pF @ 5 V
-
690mW (Ta)
-55°C ~ 150°C (TJ)
Surface Mount
SOT-23-3 (TO-236)
TO-236-3, SC-59, SOT-23-3
SOT-23-3
DMP2035U-7
MOSFET P-CH 20V 3.6A SOT23-3
Diodes Incorporated
47,330
In Stock
1 : $0.44000
Cut Tape (CT)
3,000 : $0.09543
Tape & Reel (TR)
-
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
P-Channel
MOSFET (Metal Oxide)
20 V
3.6A (Ta)
1.8V, 4.5V
35mOhm @ 4A, 4.5V
1V @ 250µA
15.4 nC @ 4.5 V
±8V
1610 pF @ 10 V
-
810mW (Ta)
-55°C ~ 150°C (TJ)
Surface Mount
SOT-23-3
TO-236-3, SC-59, SOT-23-3
SI2333DS-T1-GE3
SI2302CDS-T1-E3
MOSFET N-CH 20V 2.6A SOT23-3
Vishay Siliconix
117,150
In Stock
1 : $0.54000
Cut Tape (CT)
3,000 : $0.12092
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
20 V
2.6A (Ta)
2.5V, 4.5V
57mOhm @ 3.6A, 4.5V
850mV @ 250µA
5.5 nC @ 4.5 V
±8V
-
-
710mW (Ta)
-55°C ~ 150°C (TJ)
Surface Mount
SOT-23-3 (TO-236)
TO-236-3, SC-59, SOT-23-3
BCV27
FDN360P
MOSFET P-CH 30V 2A SUPERSOT3
onsemi
37,635
In Stock
1 : $0.65000
Cut Tape (CT)
3,000 : $0.14825
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
P-Channel
MOSFET (Metal Oxide)
30 V
2A (Ta)
4.5V, 10V
80mOhm @ 2A, 10V
3V @ 250µA
9 nC @ 10 V
±20V
298 pF @ 15 V
-
500mW (Ta)
-55°C ~ 155°C (TJ)
Surface Mount
SOT-23-3
TO-236-3, SC-59, SOT-23-3
SOT-23-3
SI2323DDS-T1-GE3
MOSFET P-CH 20V 5.3A SOT-23
Vishay Siliconix
9,036
In Stock
1 : $0.85000
Cut Tape (CT)
3,000 : $0.20295
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
P-Channel
MOSFET (Metal Oxide)
20 V
5.3A (Tc)
1.8V, 4.5V
39mOhm @ 4.1A, 4.5V
1V @ 250µA
36 nC @ 8 V
±8V
1160 pF @ 10 V
-
960mW (Ta), 1.7W (Tc)
-55°C ~ 150°C (TJ)
Surface Mount
SOT-23
TO-236-3, SC-59, SOT-23-3
SI2333DS-T1-GE3
SI2323DS-T1-BE3
P-CHANNEL 20-V (D-S) MOSFET
Vishay Siliconix
1,666
In Stock
1 : $1.11000
Cut Tape (CT)
3,000 : $0.27841
Tape & Reel (TR)
-
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Last Time Buy
P-Channel
MOSFET (Metal Oxide)
20 V
3.7A (Ta)
1.8V, 4.5V
39mOhm @ 4.7A, 4.5V
1V @ 250µA
19 nC @ 4.5 V
±8V
1020 pF @ 10 V
-
750mW (Ta)
-55°C ~ 150°C (TJ)
Surface Mount
SOT-23-3 (TO-236)
TO-236-3, SC-59, SOT-23-3
SI2333DS-T1-GE3
SI2315BDS-T1-E3
MOSFET P-CH 12V 3A SOT23-3
Vishay Siliconix
52,706
In Stock
1 : $0.80000
Cut Tape (CT)
3,000 : $0.18917
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Last Time Buy
P-Channel
MOSFET (Metal Oxide)
12 V
3A (Ta)
1.8V, 4.5V
50mOhm @ 3.85A, 4.5V
900mV @ 250µA
15 nC @ 4.5 V
±8V
715 pF @ 6 V
-
750mW (Ta)
-55°C ~ 150°C (TJ)
Surface Mount
SOT-23-3 (TO-236)
TO-236-3, SC-59, SOT-23-3
SI2333DS-T1-GE3
SI2323DS-T1-GE3
MOSFET P-CH 20V 3.7A SOT23-3
Vishay Siliconix
4,194
In Stock
1 : $1.11000
Cut Tape (CT)
3,000 : $0.27841
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Last Time Buy
P-Channel
MOSFET (Metal Oxide)
20 V
3.7A (Ta)
1.8V, 4.5V
39mOhm @ 4.7A, 4.5V
1V @ 250µA
19 nC @ 4.5 V
±8V
1020 pF @ 10 V
-
750mW (Ta)
-55°C ~ 150°C (TJ)
Surface Mount
SOT-23-3 (TO-236)
TO-236-3, SC-59, SOT-23-3
Showing
of 8

Single FETs, MOSFETs

Discrete Field Effect Transistors (FETs) are widely used in power conversion, motor control, solid-state lighting, and other applications where their characteristic ability to be switched on & off at high frequencies while carrying substantial amounts of current is advantageous. They are used almost universally for applications requiring voltage ratings of a few hundred volts or less, above which other device types such as IGBTs become more competitive.