Single FETs, MOSFETs

Results: 4
Manufacturer
Diodes IncorporatedInfineon TechnologiesToshiba Semiconductor and Storage
Series
-Automotive, AEC-Q101, SIPMOS®SIPMOS®U-MOSVI
Packaging
Cut Tape (CT)Digi-Reel®Tape & Reel (TR)
Product Status
ActiveLast Time Buy
FET Type
N-ChannelP-Channel
Drain to Source Voltage (Vdss)
20 V50 V60 V
Current - Continuous Drain (Id) @ 25°C
200mA (Ta)330mA (Ta)4A (Ta)
Drive Voltage (Max Rds On, Min Rds On)
1.5V, 4.5V4.5V, 10V10V
Rds On (Max) @ Id, Vgs
33mOhm @ 4A, 4.5V2Ohm @ 330mA, 10V3.5Ohm @ 220mA, 10V5Ohm @ 500mA, 10V
Vgs(th) (Max) @ Id
1V @ 1mA1.5V @ 250µA2V @ 80µA2.3V @ 26µA
Gate Charge (Qg) (Max) @ Vgs
1.5 nC @ 10 V3.57 nC @ 10 V3.6 nC @ 4.5 V
Vgs (Max)
±8V±20V
Input Capacitance (Ciss) (Max) @ Vds
50 pF @ 10 V56 pF @ 25 V78 pF @ 25 V410 pF @ 10 V
Power Dissipation (Max)
200mW (Ta)360mW (Ta)1W (Ta)
Operating Temperature
-55°C ~ 150°C (TJ)150°C (TJ)
Supplier Device Package
PG-SOT23SOT-23FSOT-323
Package / Case
SC-70, SOT-323SOT-23-3 Flat LeadsTO-236-3, SC-59, SOT-23-3
Stocking Options
Environmental Options
Media
Marketplace Product
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Mfr Part #
Quantity Available
Price
Series
Package
Product Status
FET Type
Technology
Drain to Source Voltage (Vdss)
Current - Continuous Drain (Id) @ 25°C
Drive Voltage (Max Rds On, Min Rds On)
Rds On (Max) @ Id, Vgs
Vgs(th) (Max) @ Id
Gate Charge (Qg) (Max) @ Vgs
Vgs (Max)
Input Capacitance (Ciss) (Max) @ Vds
FET Feature
Power Dissipation (Max)
Operating Temperature
Mounting Type
Supplier Device Package
Package / Case
SOT-323
BSS138W-7-F
MOSFET N-CH 50V 200MA SOT323
Diodes Incorporated
1,022,879
In Stock
150,000
Factory
1 : $0.30000
Cut Tape (CT)
3,000 : $0.05067
Tape & Reel (TR)
-
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
ActiveN-ChannelMOSFET (Metal Oxide)50 V200mA (Ta)10V3.5Ohm @ 220mA, 10V1.5V @ 250µA-±20V50 pF @ 10 V-200mW (Ta)-55°C ~ 150°C (TJ)Surface MountSOT-323SC-70, SOT-323
MOSFET N-CHANNEL 20V 4A SOT23F
SSM3K345R,LF
MOSFET N-CHANNEL 20V 4A SOT23F
Toshiba Semiconductor and Storage
7,719
In Stock
1 : $0.41000
Cut Tape (CT)
3,000 : $0.09039
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
ActiveN-ChannelMOSFET (Metal Oxide)20 V4A (Ta)1.5V, 4.5V33mOhm @ 4A, 4.5V1V @ 1mA3.6 nC @ 4.5 V±8V410 pF @ 10 V-1W (Ta)150°C (TJ)Surface MountSOT-23FSOT-23-3 Flat Leads
SOT-23-3
BSS7728NH6327XTSA2
MOSFET N-CH 60V 200MA SOT23-3
Infineon Technologies
19,980
In Stock
1 : $0.38000
Cut Tape (CT)
3,000 : $0.06821
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Last Time BuyN-ChannelMOSFET (Metal Oxide)60 V200mA (Ta)4.5V, 10V5Ohm @ 500mA, 10V2.3V @ 26µA1.5 nC @ 10 V±20V56 pF @ 25 V-360mW (Ta)-55°C ~ 150°C (TJ)Surface MountPG-SOT23TO-236-3, SC-59, SOT-23-3
SOT-23-3
BSS83PH6327XTSA1
MOSFET P-CH 60V 330MA SOT23-3
Infineon Technologies
0
In Stock
Check Lead Time
1 : $0.39000
Cut Tape (CT)
3,000 : $0.11182
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
ActiveP-ChannelMOSFET (Metal Oxide)60 V330mA (Ta)4.5V, 10V2Ohm @ 330mA, 10V2V @ 80µA3.57 nC @ 10 V±20V78 pF @ 25 V-360mW (Ta)-55°C ~ 150°C (TJ)Surface MountPG-SOT23TO-236-3, SC-59, SOT-23-3
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Single FETs, MOSFETs

Discrete Field Effect Transistors (FETs) are widely used in power conversion, motor control, solid-state lighting, and other applications where their characteristic ability to be switched on & off at high frequencies while carrying substantial amounts of current is advantageous. They are used almost universally for applications requiring voltage ratings of a few hundred volts or less, above which other device types such as IGBTs become more competitive.