Single FETs, MOSFETs

Showing

of 3

Mfr Part #	Quantity Available	Price	Tariff Status	Series	Package	Product Status	FET Type	Technology	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)	Rds On (Max) @ Id, Vgs	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Vgs (Max)	Input Capacitance (Ciss) (Max) @ Vds	FET Feature	Power Dissipation (Max)	Operating Temperature	Grade	Qualification	Mounting Type	Supplier Device Package	Package / Case
DMN60H080DS-7 MOSFET N-CH 600V 80MA SOT23-3 Diodes Incorporated	36,321 In Stock	1 : $0.41000 Cut Tape (CT) 3,000 : $0.07242 Tape & Reel (TR)	Tariff may apply if shipping to the United States	-	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Active	N-Channel	MOSFET (Metal Oxide)	600 V	80mA (Ta)	4.5V, 10V	100Ohm @ 60mA, 10V	3V @ 250µA	1.7 nC @ 10 V	±20V	25 pF @ 25 V	-	1.1W (Ta)	-55°C ~ 150°C (TJ)	-	-	Surface Mount	SOT-23-3	TO-236-3, SC-59, SOT-23-3
BSS127H6327XTSA2 MOSFET N-CH 600V 21MA SOT23-3 Infineon Technologies	38,081 In Stock	1 : $0.42000 Cut Tape (CT) 3,000 : $0.08364 Tape & Reel (TR)	-	SIPMOS®	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Active	N-Channel	MOSFET (Metal Oxide)	600 V	21mA (Ta)	4.5V, 10V	500Ohm @ 16mA, 10V	2.6V @ 8µA	1 nC @ 10 V	±20V	28 pF @ 25 V	-	500mW (Ta)	-55°C ~ 150°C (TJ)	Automotive	AEC-Q101	Surface Mount	PG-SOT23	TO-236-3, SC-59, SOT-23-3
BSS127S-7 MOSFET N-CH 600V 50MA SOT23 Diodes Incorporated	140,112 In Stock	1 : $0.44000 Cut Tape (CT) 3,000 : $0.07854 Tape & Reel (TR)	Tariff may apply if shipping to the United States	-	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Active	N-Channel	MOSFET (Metal Oxide)	600 V	50mA (Ta)	5V, 10V	160Ohm @ 16mA, 10V	4.5V @ 250µA	1.08 nC @ 10 V	±20V	21.8 pF @ 25 V	-	610mW (Ta)	-55°C ~ 150°C (TJ)	-	-	Surface Mount	SOT-23-3	TO-236-3, SC-59, SOT-23-3

Showing

of 3

Discrete Field Effect Transistors (FETs) are widely used in power conversion, motor control, solid-state lighting, and other applications where their characteristic ability to be switched on & off at high frequencies while carrying substantial amounts of current is advantageous. They are used almost universally for applications requiring voltage ratings of a few hundred volts or less, above which other device types such as IGBTs become more competitive.