Single FETs, MOSFETs

Results: 3
FET Type
N-ChannelP-Channel
Drain to Source Voltage (Vdss)
55 V100 V
Current - Continuous Drain (Id) @ 25°C
19A (Tc)33A (Tc)49A (Tc)
Rds On (Max) @ Id, Vgs
17.5mOhm @ 25A, 10V44mOhm @ 16A, 10V100mOhm @ 10A, 10V
Gate Charge (Qg) (Max) @ Vgs
35 nC @ 10 V63 nC @ 10 V71 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds
620 pF @ 25 V1470 pF @ 25 V1960 pF @ 25 V
Power Dissipation (Max)
68W (Tc)94W (Tc)130W (Tc)
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Mfr Part #
Quantity Available
Price
Series
Package
Product Status
FET Type
Technology
Drain to Source Voltage (Vdss)
Current - Continuous Drain (Id) @ 25°C
Drive Voltage (Max Rds On, Min Rds On)
Rds On (Max) @ Id, Vgs
Vgs(th) (Max) @ Id
Gate Charge (Qg) (Max) @ Vgs
Vgs (Max)
Input Capacitance (Ciss) (Max) @ Vds
FET Feature
Power Dissipation (Max)
Operating Temperature
Mounting Type
Supplier Device Package
Package / Case
TO-220AB PKG
IRF540NPBF
MOSFET N-CH 100V 33A TO220AB
Infineon Technologies
135,849
In Stock
1 : $0.87000
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N-Channel
MOSFET (Metal Oxide)
100 V
33A (Tc)
10V
44mOhm @ 16A, 10V
4V @ 250µA
71 nC @ 10 V
±20V
1960 pF @ 25 V
-
130W (Tc)
-55°C ~ 175°C (TJ)
Through Hole
TO-220AB
TO-220-3
TO-220AB PKG
IRFZ44NPBF
MOSFET N-CH 55V 49A TO220AB
Infineon Technologies
26,516
In Stock
1 : $1.30000
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N-Channel
MOSFET (Metal Oxide)
55 V
49A (Tc)
10V
17.5mOhm @ 25A, 10V
4V @ 250µA
63 nC @ 10 V
±20V
1470 pF @ 25 V
-
94W (Tc)
-55°C ~ 175°C (TJ)
Through Hole
TO-220AB
TO-220-3
TO-220AB PKG
IRF9Z34NPBF
MOSFET P-CH 55V 19A TO220AB
Infineon Technologies
72,721
In Stock
1 : $0.66000
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P-Channel
MOSFET (Metal Oxide)
55 V
19A (Tc)
10V
100mOhm @ 10A, 10V
4V @ 250µA
35 nC @ 10 V
±20V
620 pF @ 25 V
-
68W (Tc)
-55°C ~ 175°C (TJ)
Through Hole
TO-220AB
TO-220-3
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of 3

Single FETs, MOSFETs


Discrete Field Effect Transistors (FETs) are widely used in power conversion, motor control, solid-state lighting, and other applications where their characteristic ability to be switched on & off at high frequencies while carrying substantial amounts of current is advantageous. They are used almost universally for applications requiring voltage ratings of a few hundred volts or less, above which other device types such as IGBTs become more competitive.