Single FETs, MOSFETs

Showing

of 2

	Mfr Part #	Quantity Available	Price	Series	Package	Product Status	FET Type	Technology	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)	Rds On (Max) @ Id, Vgs	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Vgs (Max)	Input Capacitance (Ciss) (Max) @ Vds	FET Feature	Power Dissipation (Max)	Operating Temperature	Grade	Qualification	Mounting Type	Supplier Device Package	Package / Case
	PMV88ENER PMV88ENE/SOT23/TO-236AB Nexperia USA Inc.	3,648 In Stock	1 : $0.50000 Cut Tape (CT) 3,000 : $0.11028 Tape & Reel (TR)	-	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Active	N-Channel	MOSFET (Metal Oxide)	60 V	2.2A (Ta)	4.5V, 10V	117mOhm @ 2.2A, 10V	2.7V @ 250µA	6 nC @ 10 V	±20V	196 pF @ 30 V	-	615mW (Ta), 7.5W (Tc)	-55°C ~ 175°C (TJ)	-	-	Surface Mount	TO-236AB	TO-236-3, SC-59, SOT-23-3
	IRF9Z34NPBF MOSFET P-CH 55V 19A TO220AB Infineon Technologies	67,009 In Stock	1 : $1.18000 Tube	HEXFET®	Tube	Active	P-Channel	MOSFET (Metal Oxide)	55 V	19A (Tc)	10V	100mOhm @ 10A, 10V	4V @ 250µA	35 nC @ 10 V	±20V	620 pF @ 25 V	-	68W (Tc)	-55°C ~ 175°C (TJ)	-	-	Through Hole	TO-220AB	TO-220-3

Showing

of 2

Discrete Field Effect Transistors (FETs) are widely used in power conversion, motor control, solid-state lighting, and other applications where their characteristic ability to be switched on & off at high frequencies while carrying substantial amounts of current is advantageous. They are used almost universally for applications requiring voltage ratings of a few hundred volts or less, above which other device types such as IGBTs become more competitive.