Single Bipolar Transistors

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Transistor Type
Current - Collector (Ic) (Max)
Voltage - Collector Emitter Breakdown (Max)
Vce Saturation (Max) @ Ib, Ic
Current - Collector Cutoff (Max)
DC Current Gain (hFE) (Min) @ Ic, Vce
Power - Max
Frequency - Transition
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TO-226-3, TO-92-3
2N3906TAR
TRANS PNP 40V 0.2A TO-92-3
onsemi
14,204
In Stock
104,000
Factory
2,000 : $0.05890
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1 : $0.27000
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PNP
200 mA
40 V
400mV @ 5mA, 50mA
-
100 @ 10mA, 1V
625 mW
250MHz
-55°C ~ 150°C (TJ)
Through Hole
TO-226-3, TO-92-3 (TO-226AA) Formed Leads
TO-92-3
TO-226-3, TO-92-3 (TO-226AA) Formed Leads
2N3904TAR
TRANS NPN 40V 0.2A TO-92-3
onsemi
15,651
In Stock
2,000 : $0.06070
Tape & Box (TB)
1 : $0.28000
Cut Tape (CT)
Tariff may apply if shipping to the United States
-
Cut Tape (CT)
Tape & Box (TB)
Active
NPN
200 mA
40 V
300mV @ 5mA, 50mA
-
100 @ 10mA, 1V
625 mW
300MHz
-55°C ~ 150°C (TJ)
Through Hole
TO-226-3, TO-92-3 (TO-226AA) Formed Leads
TO-92-3
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Single Bipolar Transistors


Discrete Bipolar Junction Transistors (BJTs) are commonly used to construct analog signal amplification functions in audio, radio, and other applications. One of the first semiconductor devices to be mass produced, their characteristics are less favorable than those of other device types for applications involving high frequency switching and operation with high currents or voltages, but they remain a technology of choice for applications requiring analog signal reproduction with minimal added noise and distortion. BJTs come in two varieties - NPN and PNP - which refer to the sequence of semiconductor layers that make up the transistor. NPN transistors consist of a thin P-type semiconductor between two N-type materials, while PNP transistors have an N-type semiconductor between two P-types. This gives the two types opposite polarity operation. NPN transistors sink current, while PNP transistors source current.