Single Bipolar Transistors

Results: 2
Manufacturer
Nexperia USA Inc.onsemi
Series
-BC817-Q
Packaging
Cut Tape (CT)Digi-Reel®Tape & Reel (TR)
Current - Collector (Ic) (Max)
500 mA600 mA
Voltage - Collector Emitter Breakdown (Max)
40 V45 V
Vce Saturation (Max) @ Ib, Ic
700mV @ 50mA, 500mA1V @ 50mA, 500mA
Current - Collector Cutoff (Max)
10nA (ICBO)100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce
100 @ 150mA, 10V250 @ 100mA, 1V
Power - Max
225 mW250 mW
Frequency - Transition
100MHz300MHz
Operating Temperature
-55°C ~ 150°C (TJ)150°C (TJ)
Supplier Device Package
SOT-23-3 (TO-236)TO-236AB
Stocking Options
Environmental Options
Media
Marketplace Product
2Results

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of 2
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Mfr Part #
Quantity Available
Price
Series
Package
Product Status
Transistor Type
Current - Collector (Ic) (Max)
Voltage - Collector Emitter Breakdown (Max)
Vce Saturation (Max) @ Ib, Ic
Current - Collector Cutoff (Max)
DC Current Gain (hFE) (Min) @ Ic, Vce
Power - Max
Frequency - Transition
Operating Temperature
Grade
Qualification
Mounting Type
Package / Case
Supplier Device Package
SOT 23-3
SMMBT2222ALT1G
TRANS NPN 40V 0.6A SOT23-3
onsemi
39,555
In Stock
1 : $0.27000
Cut Tape (CT)
3,000 : $0.04509
Tape & Reel (TR)
-
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
NPN
600 mA
40 V
1V @ 50mA, 500mA
10nA (ICBO)
100 @ 150mA, 10V
225 mW
300MHz
-55°C ~ 150°C (TJ)
Automotive
AEC-Q101
Surface Mount
TO-236-3, SC-59, SOT-23-3
SOT-23-3 (TO-236)
TO-236AB
BC817-40-QR
TRANS NPN 45V 0.5A TO236AB
Nexperia USA Inc.
36,000
In Stock
3,000 : $0.03042
Tape & Reel (TR)
Tape & Reel (TR)
Active
NPN
500 mA
45 V
700mV @ 50mA, 500mA
100nA (ICBO)
250 @ 100mA, 1V
250 mW
100MHz
150°C (TJ)
Automotive
AEC-Q101
Surface Mount
TO-236-3, SC-59, SOT-23-3
TO-236AB
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of 2

Single Bipolar Transistors


Discrete Bipolar Junction Transistors (BJTs) are commonly used to construct analog signal amplification functions in audio, radio, and other applications. One of the first semiconductor devices to be mass produced, their characteristics are less favorable than those of other device types for applications involving high frequency switching and operation with high currents or voltages, but they remain a technology of choice for applications requiring analog signal reproduction with minimal added noise and distortion. BJTs come in two varieties - NPN and PNP - which refer to the sequence of semiconductor layers that make up the transistor. NPN transistors consist of a thin P-type semiconductor between two N-type materials, while PNP transistors have an N-type semiconductor between two P-types. This gives the two types opposite polarity operation. NPN transistors sink current, while PNP transistors source current.