Gate Drivers

Results: 8
Manufacturer
Infineon TechnologiesMicrochip TechnologyTexas Instruments
Packaging
BulkTube
Driven Configuration
Half-BridgeHigh-SideHigh-Side or Low-SideLow-Side
Channel Type
IndependentSingle
Number of Drivers
12
Gate Type
IGBT, N-Channel MOSFETIGBT, N-Channel, P-Channel MOSFETN-Channel MOSFETN-Channel, P-Channel MOSFET
Voltage - Supply
2.75V ~ 30V4V ~ 15V4.5V ~ 18V4.5V ~ 30V10V ~ 20V
Logic Voltage - VIL, VIH
0.7V, 2.2V0.8V, 2.4V0.8V, 2V1V, 2V6V, 9.5V
Current - Peak Output (Source, Sink)
250mA, 500mA1A, 1A1.5A, 1.5A3A, 3A4A, 4A6A, 6A-
Input Type
InvertingInverting, Non-InvertingNon-Inverting
High Side Voltage - Max (Bootstrap)
200 V600 V
Rise / Fall Time (Typ)
10ns, 15ns20ns, 15ns20ns, 20ns25ns, 33ns35ns, 20ns80ns, 40ns-
Operating Temperature
-40°C ~ 125°C (TA)-40°C ~ 150°C (TJ)0°C ~ 150°C (TJ)
Package / Case
8-DIP (0.300", 7.62mm)14-DIP (0.300", 7.62mm)
Supplier Device Package
8-PDIP14-DIP
Stocking Options
Environmental Options
Media
Marketplace Product
8Results
Showing
of 8
Mfr Part #
Quantity Available
Price
Series
Package
Product Status
DigiKey Programmable
Driven Configuration
Channel Type
Number of Drivers
Gate Type
Voltage - Supply
Logic Voltage - VIL, VIH
Current - Peak Output (Source, Sink)
Input Type
High Side Voltage - Max (Bootstrap)
Rise / Fall Time (Typ)
Operating Temperature
Mounting Type
Package / Case
Supplier Device Package
8-PDIP
MCP1407-E/P
IC GATE DRVR LOW-SIDE 8DIP
Microchip Technology
339
In Stock
1 : $1.25000
Tube
-
Tube
Active
Not Verified
Low-Side
Single
1
IGBT, N-Channel, P-Channel MOSFET
4.5V ~ 18V
0.8V, 2.4V
6A, 6A
Non-Inverting
-
20ns, 20ns
-40°C ~ 150°C (TJ)
Through Hole
8-DIP (0.300", 7.62mm)
8-PDIP
8-DIP
UCC27425P
IC GATE DRVR LOW-SIDE 8DIP
Texas Instruments
899
In Stock
4,985
Marketplace
500 : $0.60000
Bulk
1 : $1.37000
Tube
-
Bulk
Tube
Active
Not Verified
Low-Side
Independent
2
N-Channel, P-Channel MOSFET
4V ~ 15V
1V, 2V
4A, 4A
Inverting, Non-Inverting
-
20ns, 15ns
-40°C ~ 125°C (TA)
Through Hole
8-DIP (0.300", 7.62mm)
8-PDIP
8-DIP
IR2011PBF
IC GATE DRVR HI/LOW SIDE 8DIP
Infineon Technologies
1,284
In Stock
1 : $2.89000
Tube
-
Tube
Active
Not Verified
High-Side or Low-Side
Independent
2
N-Channel MOSFET
10V ~ 20V
0.7V, 2.2V
1A, 1A
Inverting
200 V
35ns, 20ns
-40°C ~ 150°C (TJ)
Through Hole
8-DIP (0.300", 7.62mm)
8-PDIP
8-DIP
MIC5014YN
IC GATE DRVR HI/LOW SIDE 8DIP
Microchip Technology
2,757
In Stock
1 : $3.54000
Tube
-
Tube
Active
Not Verified
High-Side or Low-Side
Single
1
N-Channel MOSFET
2.75V ~ 30V
0.8V, 2V
-
Non-Inverting
-
-
-40°C ~ 150°C (TJ)
Through Hole
8-DIP (0.300", 7.62mm)
8-PDIP
8-DIP
IR2117PBF
IC GATE DRVR HIGH-SIDE 8DIP
Infineon Technologies
2,619
In Stock
1 : $3.77000
Tube
-
Tube
Active
Not Verified
High-Side
Single
1
IGBT, N-Channel MOSFET
10V ~ 20V
6V, 9.5V
250mA, 500mA
Non-Inverting
600 V
80ns, 40ns
-40°C ~ 150°C (TJ)
Through Hole
8-DIP (0.300", 7.62mm)
8-PDIP
IR2010PBF
IR2010PBF
IC GATE DRVR HALF-BRIDGE 14DIP
Infineon Technologies
2,644
In Stock
1 : $4.45000
Tube
-
Tube
Active
Not Verified
Half-Bridge
Independent
2
IGBT, N-Channel MOSFET
10V ~ 20V
6V, 9.5V
3A, 3A
Non-Inverting
200 V
10ns, 15ns
-40°C ~ 150°C (TJ)
Through Hole
14-DIP (0.300", 7.62mm)
14-DIP
8-DIP
MIC5015YN
IC GATE DRVR HI/LOW SIDE 8DIP
Microchip Technology
247
In Stock
1 : $3.25000
Tube
-
Tube
Active
Not Verified
High-Side or Low-Side
Single
1
N-Channel MOSFET
2.75V ~ 30V
0.8V, 2V
-
Inverting
-
-
-40°C ~ 150°C (TJ)
Through Hole
8-DIP (0.300", 7.62mm)
8-PDIP
8-PDIP
TC4431CPA
IC GATE DRVR HI/LOW SIDE 8DIP
Microchip Technology
118
In Stock
1 : $3.96000
Tube
-
Tube
Active
Not Verified
High-Side or Low-Side
Single
1
N-Channel, P-Channel MOSFET
4.5V ~ 30V
0.8V, 2.4V
1.5A, 1.5A
Inverting
-
25ns, 33ns
0°C ~ 150°C (TJ)
Through Hole
8-DIP (0.300", 7.62mm)
8-PDIP
Showing
of 8

Gate Drivers

Gate driver Power Management Integrated Circuits (PMICs) are devices that provide isolation, amplification, reference shifting, bootstrapping, or other functions necessary to interface signals from a control device in a power conversion application to the semiconductor devices (usually FETs or IGBTs) through which the power being controlled passes. The exact functions offered by any particular device vary, but correlate with the semiconductor configuration it is adapted to drive.