Showing
1 - 4
of 4
Compare
Mfr Part #
Quantity Available
Price
Series
Package
Product Status
Driven Configuration
Channel Type
Number of Drivers
Gate Type
Voltage - Supply
Logic Voltage - VIL, VIH
Current - Peak Output (Source, Sink)
Input Type
High Side Voltage - Max (Bootstrap)
Rise / Fall Time (Typ)
Operating Temperature
Mounting Type
Package / Case
Supplier Device Package
YFF-6-BGA Pkg
LMG1020YFFR
IC GATE DRVR LOW-SIDE 6DSBGA
Texas Instruments
80,730
In Stock
1 : $5.09000
Cut Tape (CT)
3,000 : $2.89760
Tape & Reel (TR)
-
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
ActiveLow-SideSingle1N-Channel, P-Channel MOSFET4.75V ~ 5.25V1.8V, 1.7V7A, 5AInverting, Non-Inverting-375ps, 350ps-40°C ~ 125°C (TJ)Surface Mount6-UFBGA, DSBGA6-DSBGA
YFF-6-BGA Pkg
LMG1020YFFT
IC GATE DRVR LOW-SIDE 6DSBGA
Texas Instruments
31
In Stock
750
Factory
1 : $6.10000
Cut Tape (CT)
250 : $4.26124
Tape & Reel (TR)
-
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
ActiveLow-SideSingle1N-Channel, P-Channel MOSFET4.75V ~ 5.25V1.8V, 1.7V7A, 5AInverting, Non-Inverting-375ps, 350ps-40°C ~ 125°C (TJ)Surface Mount6-UFBGA, DSBGA6-DSBGA
12-DSBGA
LMG1205YFXT
IC GATE DRVR HALF-BRIDGE 12DSBGA
Texas Instruments
0
In Stock
1 : $4.42000
Cut Tape (CT)
250 : $3.08464
Tape & Reel (TR)
-
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
ActiveHalf-BridgeIndependent2N-Channel MOSFET4.5V ~ 5.5V1.76V, 1.89V1.2A, 5ATTL100 V7ns, 3.5ns-40°C ~ 125°C (TJ)Surface Mount12-WFBGA, DSBGA12-DSBGA
12-DSBGA
LMG1205YFXR
IC GATE DRVR HALF-BRIDGE 12DSBGA
Texas Instruments
0
In Stock
1 : $3.68000
Cut Tape (CT)
3,000 : $2.09760
Tape & Reel (TR)
-
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
ActiveHalf-BridgeIndependent2N-Channel MOSFET4.5V ~ 5.5V-1.2A, 5ATTL100 V7ns, 3.5ns-40°C ~ 125°C (TJ)Surface Mount12-WFBGA, DSBGA12-DSBGA
Showing
1 - 4
of 4

Gate Drivers


Gate driver Power Management Integrated Circuits (PMICs) are devices that provide isolation, amplification, reference shifting, bootstrapping, or other functions necessary to interface signals from a control device in a power conversion application to the semiconductor devices (usually FETs or IGBTs) through which the power being controlled passes. The exact functions offered by any particular device vary, but correlate with the semiconductor configuration it is adapted to drive.