Optical Sensors - Phototransistors

Results: 4

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Manufacturer

ElectrovergeHarvatek Corporation

Series

-T1691PT

Packaging

Cut Tape (CT)Digi-Reel®Tape & Reel (TR)Tray

Voltage - Collector Emitter Breakdown (Max)

6 V35 V80 V85 V

Current - Collector (Ic) (Max)

20 mA50 mA

Current - Dark (Id) (Max)

50 nA100 nA

Wavelength

570nm840nm910nm940nm

Viewing Angle

120°-

Operating Temperature

-55°C ~ 125°C-40°C ~ 100°C-40°C ~ 85°C

Package / Case

2-PLCCDie

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Mfr Part #	Quantity Available	Price	Series	Package	Product Status	Voltage - Collector Emitter Breakdown (Max)	Current - Collector (Ic) (Max)	Current - Dark (Id) (Max)	Wavelength	Viewing Angle	Power - Max	Mounting Type	Orientation	Operating Temperature	Package / Case

T1691PT--H9B000212U1930 3.5(L)X2.8(W)X1.9(H) MM Harvatek Corporation	2,000 In Stock	1 : $0.21000 Cut Tape (CT) 2,000 : $0.19950 Tape & Reel (TR)	T1691PT	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Active	35 V	20 mA	100 nA	940nm	-	150 mW	Surface Mount	Top View	-40°C ~ 85°C	2-PLCC
T1090P6-SD-F Silicon NPN Phototransister, 840 Electroverge	89 Marketplace	89 : $14.00000 Tray	-	Tray	Active	80 V	50 mA	50 nA	840nm	120°	-	Surface Mount	Top View	-55°C ~ 125°C	Die
T1070P-SD-F Silicon NPN Phototransister, 570 Electroverge	50 Marketplace	50 : $18.00000 Tray	-	Tray	Active	6 V	20 mA	50 nA	570nm	120°	-	Surface Mount	Top View	-40°C ~ 100°C	Die
T5096P-SD-F Silicon NPN Phototransister, 910 Electroverge	100 Marketplace	100 : $12.00000 Tray	-	Tray	Active	85 V	50 mA	50 nA	910nm	120°	-	Surface Mount	Top View	-55°C ~ 125°C	Die

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Optical Sensors - Phototransistors

Products in the phototransistor family are discrete light sensitive components which behave in similar fashion to a bipolar transistor, but use incident light instead of an electrical current applied through a device terminal to cause the device to conduct. Compared to photodiodes, phototransistors generally produce a much larger output current for the same intensity of incident light, though are slower to respond to changes in light intensity. These differences result in phototransistors being simpler to apply, but less useful for high speed operation.