FET, MOSFET Arrays

Results: 2
Manufacturer
Alpha & Omega Semiconductor Inc.Vishay Siliconix
Series
AlphaMOSTrenchFET® Gen IV
Packaging
Cut Tape (CT)Digi-Reel®Tape & Reel (TR)
Configuration
2 N-Channel (Dual)2 N-Channel (Dual) Asymmetrical
Current - Continuous Drain (Id) @ 25°C
18A (Ta), 30A (Tc)22A (Tc), 85A (Tc)
Rds On (Max) @ Id, Vgs
4.3mOhm @ 20A, 10V, 0.83mOhm @ 30A, 10V7.12mOhm @ 15A, 10V
Vgs(th) (Max) @ Id
2.1V @ 250µA, 1.9V @ 250µA2.4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
15nC @ 4.5V, 65nC @ 4.5V18.2nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds
820pF @ 15V1075pF @ 15V, 5560pF @ 15V
Power - Max
3.7W (Ta), 16.7W (Tc)24W, 75W
Package / Case
8-PowerWDFN8-VDFN Exposed Pad
Supplier Device Package
8-DFN (5x6)8-Power33 (3x3)
Stocking Options
Environmental Options
Media
Marketplace Product
2Results

Showing
of 2
Mfr Part #
Quantity Available
Price
Series
Package
Product Status
Technology
Configuration
FET Feature
Drain to Source Voltage (Vdss)
Current - Continuous Drain (Id) @ 25°C
Rds On (Max) @ Id, Vgs
Vgs(th) (Max) @ Id
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Power - Max
Operating Temperature
Mounting Type
Package / Case
Supplier Device Package
2,083
In Stock
1 : $2.96000
Cut Tape (CT)
3,000 : $0.90000
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
MOSFET (Metal Oxide)
2 N-Channel (Dual) Asymmetrical
-
30V
22A (Tc), 85A (Tc)
4.3mOhm @ 20A, 10V, 0.83mOhm @ 30A, 10V
2.1V @ 250µA, 1.9V @ 250µA
15nC @ 4.5V, 65nC @ 4.5V
1075pF @ 15V, 5560pF @ 15V
24W, 75W
-55°C ~ 150°C (TJ)
Surface Mount
8-VDFN Exposed Pad
8-DFN (5x6)
8-PowerWDFN
SIZ348DT-T1-GE3
MOSFET 2N-CH 30V 18A 8PWR33
Vishay Siliconix
5,710
In Stock
1 : $1.68000
Cut Tape (CT)
3,000 : $0.41350
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
MOSFET (Metal Oxide)
2 N-Channel (Dual)
-
30V
18A (Ta), 30A (Tc)
7.12mOhm @ 15A, 10V
2.4V @ 250µA
18.2nC @ 10V
820pF @ 15V
3.7W (Ta), 16.7W (Tc)
-55°C ~ 150°C (TJ)
Surface Mount
8-PowerWDFN
8-Power33 (3x3)
Showing
of 2

FET, MOSFET Arrays


Field-effect transistors (FET) are electronic devices which use an electric field to control the flow of current. Application of a voltage to the gate terminal alters the conductivity between the drain and source terminals. FETs are also known as unipolar transistors since they involve single-carrier-type operation. That is, FETs use electrons or holes as charge carriers in their operation, but not both. Field effect transistors generally display very high input impedance at low frequencies.