FET, MOSFET Arrays

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Mfr Part #	Quantity Available	Price	Tariff Status	Series	Package	Product Status	Technology	Configuration	FET Feature	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Rds On (Max) @ Id, Vgs	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Input Capacitance (Ciss) (Max) @ Vds	Power - Max	Operating Temperature	Mounting Type	Package / Case	Supplier Device Package
EPC2104 MOSFET 2N-CH 100V 23A DIE EPC	2,890 In Stock	1 : $10.35000 Cut Tape (CT) 500 : $4.81250 Tape & Reel (TR)	-	eGaN®	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Active	GaNFET (Gallium Nitride)	2 N-Channel (Half Bridge)	-	100V	23A	6.3mOhm @ 20A, 5V	2.5V @ 5.5mA	7nC @ 5V	800pF @ 50V	-	-40°C ~ 150°C (TJ)	Surface Mount	Die	Die
EPC2103 MOSFET 2N-CH 80V 28A DIE EPC	6,414 In Stock	1 : $10.76000 Cut Tape (CT) 500 : $5.06250 Tape & Reel (TR)	-	eGaN®	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Active	GaNFET (Gallium Nitride)	2 N-Channel (Half Bridge)	-	80V	28A	5.5mOhm @ 20A, 5V	2.5V @ 7mA	6.5nC @ 5V	760pF @ 40V	-	-40°C ~ 150°C (TJ)	Surface Mount	Die	Die
EPC2102 MOSFET 2N-CH 60V 23A DIE EPC	3,435 In Stock	1 : $10.35000 Cut Tape (CT) 500 : $4.81250 Tape & Reel (TR)	-	eGaN®	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Active	GaNFET (Gallium Nitride)	2 N-Channel (Half Bridge)	-	60V	23A	4.4mOhm @ 20A, 5V	2.5V @ 7mA	6.8nC @ 5V	830pF @ 30V	-	-40°C ~ 150°C (TJ)	Surface Mount	Die	Die
EPC2105 MOSFET 2N-CH 80V 9.5A/38A DIE EPC	1,299 In Stock	1 : $10.35000 Cut Tape (CT) 500 : $4.81250 Tape & Reel (TR)	-	eGaN®	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Active	GaNFET (Gallium Nitride)	2 N-Channel (Half Bridge)	-	80V	9.5A, 38A	14.5mOhm @ 20A, 5V, 3.4mOhm @ 20A, 5V	2.5V @ 2.5mA, 2.5V @ 10mA	2.5nC @ 5V, 10nC @ 5V	300pF @ 40V, 1100pF @ 40V	-	-40°C ~ 150°C (TJ)	Surface Mount	Die	Die

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Field-effect transistors (FET) are electronic devices which use an electric field to control the flow of current. Application of a voltage to the gate terminal alters the conductivity between the drain and source terminals. FETs are also known as unipolar transistors since they involve single-carrier-type operation. That is, FETs use electrons or holes as charge carriers in their operation, but not both. Field effect transistors generally display very high input impedance at low frequencies.