FET, MOSFET Arrays

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	Mfr Part #	Quantity Available	Price	Tariff Status	Series	Package	Product Status	Technology	Configuration	FET Feature	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Rds On (Max) @ Id, Vgs	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Input Capacitance (Ciss) (Max) @ Vds	Power - Max	Operating Temperature	Mounting Type	Package / Case	Supplier Device Package
	FDC3601N MOSFET 2N-CH 100V 1A SSOT6 onsemi	1,771 In Stock	1 : $0.93000 Cut Tape (CT) 3,000 : $0.22681 Tape & Reel (TR)	-	PowerTrench®	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Active	MOSFET (Metal Oxide)	2 N-Channel (Dual)	-	100V	1A	500mOhm @ 1A, 10V	4V @ 250µA	5nC @ 10V	153pF @ 50V	700mW	-55°C ~ 150°C (TJ)	Surface Mount	SOT-23-6 Thin, TSOT-23-6	SuperSOT™-6
	FDC6321C MOSFET N/P-CH 25V 0.68A SSOT6 onsemi	167 In Stock	1 : $0.90000 Cut Tape (CT) 3,000 : $0.21656 Tape & Reel (TR)	-	-	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Active	MOSFET (Metal Oxide)	N and P-Channel	Logic Level Gate	25V	680mA, 460mA	450mOhm @ 500mA, 4.5V	1.5V @ 250µA	2.3nC @ 5V	50pF @ 10V	700mW	-55°C ~ 150°C (TJ)	Surface Mount	SOT-23-6 Thin, TSOT-23-6	SuperSOT™-6

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Field-effect transistors (FET) are electronic devices which use an electric field to control the flow of current. Application of a voltage to the gate terminal alters the conductivity between the drain and source terminals. FETs are also known as unipolar transistors since they involve single-carrier-type operation. That is, FETs use electrons or holes as charge carriers in their operation, but not both. Field effect transistors generally display very high input impedance at low frequencies.