FET, MOSFET Arrays

Results: 2
Manufacturer
Nexperia USA Inc.Vishay Siliconix
Series
TrenchFET®TrenchMOS™
Packaging
Cut Tape (CT)Digi-Reel®Tape & Reel (TR)
Configuration
2 N-Channel (Dual)2 P-Channel (Dual)
Drain to Source Voltage (Vdss)
30V40V
Current - Continuous Drain (Id) @ 25°C
350mA8A
Rds On (Max) @ Id, Vgs
27mOhm @ 8A, 10V1.4Ohm @ 350mA, 4.5V
Vgs(th) (Max) @ Id
1.1V @ 250µA2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
0.68nC @ 4.5V63nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds
50pF @ 15V2000pF @ 20V
Power - Max
445mW3.2W
Package / Case
6-TSSOP, SC-88, SOT-3638-SOIC (0.154", 3.90mm Width)
Supplier Device Package
6-TSSOP8-SOIC
Stocking Options
Environmental Options
Media
Marketplace Product
2Results

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Mfr Part #
Quantity Available
Price
Series
Package
Product Status
Technology
Configuration
FET Feature
Drain to Source Voltage (Vdss)
Current - Continuous Drain (Id) @ 25°C
Rds On (Max) @ Id, Vgs
Vgs(th) (Max) @ Id
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Power - Max
Operating Temperature
Grade
Qualification
Mounting Type
Package / Case
Supplier Device Package
8-SOIC
SI4909DY-T1-GE3
MOSFET 2P-CH 40V 8A 8SOIC
Vishay Siliconix
20,144
In Stock
1 : $1.00000
Cut Tape (CT)
2,500 : $0.41360
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
ActiveMOSFET (Metal Oxide)2 P-Channel (Dual)Logic Level Gate40V8A27mOhm @ 8A, 10V2.5V @ 250µA63nC @ 10V2000pF @ 20V3.2W-55°C ~ 150°C (TJ)--Surface Mount8-SOIC (0.154", 3.90mm Width)8-SOIC
SOT363
NX3008NBKS,115
MOSFET 2N-CH 30V 0.35A 6TSSOP
Nexperia USA Inc.
910,813
In Stock
1 : $0.34000
Cut Tape (CT)
3,000 : $0.06045
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
ActiveMOSFET (Metal Oxide)2 N-Channel (Dual)Logic Level Gate30V350mA1.4Ohm @ 350mA, 4.5V1.1V @ 250µA0.68nC @ 4.5V50pF @ 15V445mW-55°C ~ 150°C (TJ)AutomotiveAEC-Q101Surface Mount6-TSSOP, SC-88, SOT-3636-TSSOP
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FET, MOSFET Arrays


Field-effect transistors (FET) are electronic devices which use an electric field to control the flow of current. Application of a voltage to the gate terminal alters the conductivity between the drain and source terminals. FETs are also known as unipolar transistors since they involve single-carrier-type operation. That is, FETs use electrons or holes as charge carriers in their operation, but not both. Field effect transistors generally display very high input impedance at low frequencies.