FET, MOSFET Arrays

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Mfr Part #	Quantity Available	Price	Series	Package	Product Status	Technology	Configuration	FET Feature	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Rds On (Max) @ Id, Vgs	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Input Capacitance (Ciss) (Max) @ Vds	Power - Max	Operating Temperature	Grade	Qualification	Mounting Type	Package / Case	Supplier Device Package

IRF7343TRPBF MOSFET N/P-CH 55V 4.7A/3.4A 8SO Infineon Technologies	4,109 In Stock	1 : $1.13000 Cut Tape (CT) 4,000 : $0.46652 Tape & Reel (TR)	HEXFET®	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Active	MOSFET (Metal Oxide)	N and P-Channel	-	55V	4.7A, 3.4A	50mOhm @ 4.7A, 10V	1V @ 250µA	36nC @ 10V	740pF @ 25V	2W	-55°C ~ 150°C (TJ)	-	-	Surface Mount	8-SOIC (0.154", 3.90mm Width)	8-SO
BSS138PS,115 MOSFET 2N-CH 60V 0.32A 6TSSOP Nexperia USA Inc.	326,108 In Stock	1 : $0.40000 Cut Tape (CT) 3,000 : $0.07284 Tape & Reel (TR)	TrenchMOS™	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Active	MOSFET (Metal Oxide)	2 N-Channel (Dual)	Logic Level Gate	60V	320mA	1.6Ohm @ 300mA, 10V	1.5V @ 250µA	0.8nC @ 4.5V	50pF @ 10V	420mW	150°C (TJ)	Automotive	AEC-Q101	Surface Mount	6-TSSOP, SC-88, SOT-363	6-TSSOP

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FET, MOSFET Arrays

Field-effect transistors (FET) are electronic devices which use an electric field to control the flow of current. Application of a voltage to the gate terminal alters the conductivity between the drain and source terminals. FETs are also known as unipolar transistors since they involve single-carrier-type operation. That is, FETs use electrons or holes as charge carriers in their operation, but not both. Field effect transistors generally display very high input impedance at low frequencies.