Through Hole Single FETs, MOSFETs

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of 13,888

Mfr Part #	Quantity Available	Price	Series	Package	Product Status	FET Type	Technology	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)	Rds On (Max) @ Id, Vgs	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Vgs (Max)	Input Capacitance (Ciss) (Max) @ Vds	FET Feature	Power Dissipation (Max)	Operating Temperature	Mounting Type	Supplier Device Package	Package / Case

SCT3160KLGC11 SICFET N-CH 1200V 17A TO247N Rohm Semiconductor	641 In Stock This product has a maximum purchase limit	1 : $10.49000 Tube	-	Tube	Active	N-Channel	SiCFET (Silicon Carbide)	1200 V	17A (Tc)	18V	208mOhm @ 5A, 18V	5.6V @ 2.5mA	42 nC @ 18 V	+22V, -4V	398 pF @ 800 V	-	103W (Tc)	175°C (TJ)	Through Hole	TO-247N	TO-247-3
SCT3080ALGC11 SICFET N-CH 650V 30A TO247N Rohm Semiconductor	1,241 In Stock This product has a maximum purchase limit	1 : $12.45000 Tube	-	Tube	Active	N-Channel	SiCFET (Silicon Carbide)	650 V	30A (Tc)	18V	104mOhm @ 10A, 18V	5.6V @ 5mA	48 nC @ 18 V	+22V, -4V	571 pF @ 500 V	-	134W (Tc)	175°C (TJ)	Through Hole	TO-247N	TO-247-3
SCT3030ALGC11 SICFET N-CH 650V 70A TO247N Rohm Semiconductor	8,248 In Stock This product has a maximum purchase limit	1 : $31.13000 Tube	-	Tube	Active	N-Channel	SiCFET (Silicon Carbide)	650 V	70A (Tc)	18V	39mOhm @ 27A, 18V	5.6V @ 13.3mA	104 nC @ 18 V	+22V, -4V	1526 pF @ 500 V	-	262W (Tc)	175°C (TJ)	Through Hole	TO-247N	TO-247-3
SCT3040KLGC11 SICFET N-CH 1200V 55A TO247N Rohm Semiconductor	1,282 In Stock This product has a maximum purchase limit	1 : $39.74000 Tube	-	Tube	Active	N-Channel	SiCFET (Silicon Carbide)	1200 V	55A (Tc)	18V	52mOhm @ 20A, 18V	5.6V @ 10mA	107 nC @ 18 V	+22V, -4V	1337 pF @ 800 V	-	262W (Tc)	175°C (TJ)	Through Hole	TO-247N	TO-247-3
SCT3022KLGC11 SICFET N-CH 1200V 95A TO247N Rohm Semiconductor	292 In Stock This product has a maximum purchase limit	1 : $52.35000 Tube	-	Tube	Active	N-Channel	SiCFET (Silicon Carbide)	1200 V	95A (Tc)	18V	28.6mOhm @ 36A, 18V	5.6V @ 18.2mA	178 nC @ 10 V	+22V, -4V	2879 pF @ 800 V	-	427W	175°C (TJ)	Through Hole	TO-247N	TO-247-3
SCT3022ALGC11 SICFET N-CH 650V 93A TO247N Rohm Semiconductor	2,100 In Stock This product has a maximum purchase limit	1 : $53.00000 Tube	-	Tube	Active	N-Channel	SiCFET (Silicon Carbide)	650 V	93A (Tc)	18V	28.6mOhm @ 36A, 18V	5.6V @ 18.2mA	133 nC @ 18 V	+22V, -4V	2208 pF @ 500 V	-	339W (Tc)	175°C (TJ)	Through Hole	TO-247N	TO-247-3
SCT3030KLGC11 SICFET N-CH 1200V 72A TO247N Rohm Semiconductor	749 In Stock This product has a maximum purchase limit	1 : $81.08000 Tube	-	Tube	Active	N-Channel	SiCFET (Silicon Carbide)	1200 V	72A (Tc)	18V	39mOhm @ 27A, 18V	5.6V @ 13.3mA	131 nC @ 18 V	+22V, -4V	2222 pF @ 800 V	-	339W (Tc)	175°C (TJ)	Through Hole	TO-247N	TO-247-3
SCT3017ALHRC11 SICFET N-CH 650V 118A TO247N Rohm Semiconductor	1,204 In Stock This product has a maximum purchase limit	1 : $125.32000 Tube	Automotive, AEC-Q101	Tube	Active	N-Channel	SiCFET (Silicon Carbide)	650 V	118A (Tc)	18V	22.1mOhm @ 47A, 18V	5.6V @ 23.5mA	172 nC @ 18 V	+22V, -4V	2884 pF @ 500 V	-	427W	175°C (TJ)	Through Hole	TO-247N	TO-247-3
IRFZ24NPBF MOSFET N-CH 55V 17A TO220AB Infineon Technologies	1,793 In Stock	1 : $0.90000 Tube	HEXFET®	Tube	Active	N-Channel	MOSFET (Metal Oxide)	55 V	17A (Tc)	10V	70mOhm @ 10A, 10V	4V @ 250µA	20 nC @ 10 V	±20V	370 pF @ 25 V	-	45W (Tc)	-55°C ~ 175°C (TJ)	Through Hole	TO-220AB	TO-220-3
IRFB7545PBF MOSFET N-CH 60V 95A TO220 Infineon Technologies	64,071 In Stock	1 : $1.00000 Tube	HEXFET®, StrongIRFET™	Tube	Active	N-Channel	MOSFET (Metal Oxide)	60 V	95A (Tc)	6V, 10V	5.9mOhm @ 57A, 10V	3.7V @ 100µA	110 nC @ 10 V	±20V	4010 pF @ 25 V	-	125W (Tc)	-55°C ~ 175°C (TJ)	Through Hole	TO-220	TO-220-3
IRLZ14PBF MOSFET N-CH 60V 10A TO220AB Vishay Siliconix	5,542 In Stock	1 : $1.11000 Tube	-	Tube	Active	N-Channel	MOSFET (Metal Oxide)	60 V	10A (Tc)	4V, 5V	200mOhm @ 6A, 5V	2V @ 250µA	8.4 nC @ 5 V	±10V	400 pF @ 25 V	-	43W (Tc)	-55°C ~ 175°C (TJ)	Through Hole	TO-220AB	TO-220-3
IRF9Z34NPBF MOSFET P-CH 55V 19A TO220AB Infineon Technologies	86,024 In Stock	1 : $1.16000 Tube	HEXFET®	Tube	Active	P-Channel	MOSFET (Metal Oxide)	55 V	19A (Tc)	10V	100mOhm @ 10A, 10V	4V @ 250µA	35 nC @ 10 V	±20V	620 pF @ 25 V	-	68W (Tc)	-55°C ~ 175°C (TJ)	Through Hole	TO-220AB	TO-220-3
IRF9530NPBF MOSFET P-CH 100V 14A TO220AB Infineon Technologies	51,822 In Stock	1 : $1.16000 Tube	HEXFET®	Tube	Active	P-Channel	MOSFET (Metal Oxide)	100 V	14A (Tc)	10V	200mOhm @ 8.4A, 10V	4V @ 250µA	58 nC @ 10 V	±20V	760 pF @ 25 V	-	79W (Tc)	-55°C ~ 175°C (TJ)	Through Hole	TO-220AB	TO-220-3
IRF530NPBF MOSFET N-CH 100V 17A TO220AB Infineon Technologies	65,251 In Stock	1 : $1.21000 Tube	HEXFET®	Tube	Active	N-Channel	MOSFET (Metal Oxide)	100 V	17A (Tc)	10V	90mOhm @ 9A, 10V	4V @ 250µA	37 nC @ 10 V	±20V	920 pF @ 25 V	-	70W (Tc)	-55°C ~ 175°C (TJ)	Through Hole	TO-220AB	TO-220-3
RFP12N10L MOSFET N-CH 100V 12A TO220-3 onsemi	8,030 In Stock	1 : $1.26000 Tube	-	Tube	Active	N-Channel	MOSFET (Metal Oxide)	100 V	12A (Tc)	5V	200mOhm @ 12A, 5V	2V @ 250µA	-	±10V	900 pF @ 25 V	-	60W (Tc)	-55°C ~ 150°C (TJ)	Through Hole	TO-220-3	TO-220-3
IPA60R360P7SXKSA1 MOSFET N-CH 600V 9A TO220 Infineon Technologies	2,928 In Stock	1 : $1.46000 Tube	CoolMOS™ P7	Tube	Active	N-Channel	MOSFET (Metal Oxide)	600 V	9A (Tc)	10V	360mOhm @ 2.7A, 10V	4V @ 140µA	13 nC @ 10 V	±20V	555 pF @ 400 V	-	22W (Tc)	-40°C ~ 150°C (TJ)	Through Hole	PG-TO220-FP	TO-220-3 Full Pack
IRF540NPBF MOSFET N-CH 100V 33A TO220AB Infineon Technologies	152,205 In Stock	1 : $1.49000 Tube	HEXFET®	Tube	Active	N-Channel	MOSFET (Metal Oxide)	100 V	33A (Tc)	10V	44mOhm @ 16A, 10V	4V @ 250µA	71 nC @ 10 V	±20V	1960 pF @ 25 V	-	130W (Tc)	-55°C ~ 175°C (TJ)	Through Hole	TO-220AB	TO-220-3
IRF640NPBF MOSFET N-CH 200V 18A TO220AB Infineon Technologies	77,995 In Stock	1 : $1.49000 Tube	HEXFET®	Tube	Not For New Designs	N-Channel	MOSFET (Metal Oxide)	200 V	18A (Tc)	10V	150mOhm @ 11A, 10V	4V @ 250µA	67 nC @ 10 V	±20V	1160 pF @ 25 V	-	150W (Tc)	-55°C ~ 175°C (TJ)	Through Hole	TO-220AB	TO-220-3
IRFD9120PBF MOSFET P-CH 100V 1A 4DIP Vishay Siliconix	56,680 In Stock	1 : $1.57000 Tube	-	Tube	Active	P-Channel	MOSFET (Metal Oxide)	100 V	1A (Ta)	10V	600mOhm @ 600mA, 10V	4V @ 250µA	18 nC @ 10 V	±20V	390 pF @ 25 V	-	1.3W (Ta)	-55°C ~ 175°C (TJ)	Through Hole	4-HVMDIP	4-DIP (0.300", 7.62mm)
IRFU9310PBF MOSFET P-CH 400V 1.8A TO251AA Vishay Siliconix	4,738 In Stock	1 : $1.58000 Tube	-	Tube	Active	P-Channel	MOSFET (Metal Oxide)	400 V	1.8A (Tc)	10V	7Ohm @ 1.1A, 10V	4V @ 250µA	13 nC @ 10 V	±20V	270 pF @ 25 V	-	50W (Tc)	-55°C ~ 150°C (TJ)	Through Hole	TO-251AA	TO-251-3 Short Leads, IPak, TO-251AA
IRLZ44NPBF MOSFET N-CH 55V 47A TO220AB Infineon Technologies	20,555 In Stock	1 : $1.59000 Tube	HEXFET®	Tube	Active	N-Channel	MOSFET (Metal Oxide)	55 V	47A (Tc)	4V, 10V	22mOhm @ 25A, 10V	2V @ 250µA	48 nC @ 5 V	±16V	1700 pF @ 25 V	-	3.8W (Ta), 110W (Tc)	-55°C ~ 175°C (TJ)	Through Hole	TO-220AB	TO-220-3
IRF9540NPBF MOSFET P-CH 100V 23A TO220AB Infineon Technologies	8,203 In Stock	1 : $1.63000 Tube	HEXFET®	Tube	Active	P-Channel	MOSFET (Metal Oxide)	100 V	23A (Tc)	10V	117mOhm @ 11A, 10V	4V @ 250µA	97 nC @ 10 V	±20V	1300 pF @ 25 V	-	140W (Tc)	-55°C ~ 150°C (TJ)	Through Hole	TO-220AB	TO-220-3
IRFZ44NPBF MOSFET N-CH 55V 49A TO220AB Infineon Technologies	1,608 In Stock	1 : $1.66000 Tube	HEXFET®	Tube	Active	N-Channel	MOSFET (Metal Oxide)	55 V	49A (Tc)	10V	17.5mOhm @ 25A, 10V	4V @ 250µA	63 nC @ 10 V	±20V	1470 pF @ 25 V	-	94W (Tc)	-55°C ~ 175°C (TJ)	Through Hole	TO-220AB	TO-220-3
IRF1010EZPBF MOSFET N-CH 60V 75A TO220AB Infineon Technologies	2,225 In Stock	1 : $1.68000 Tube	HEXFET®	Tube	Active	N-Channel	MOSFET (Metal Oxide)	60 V	75A (Tc)	10V	8.5mOhm @ 51A, 10V	4V @ 100µA	86 nC @ 10 V	±20V	2810 pF @ 25 V	-	140W (Tc)	-55°C ~ 175°C (TJ)	Through Hole	TO-220AB	TO-220-3
IRFD110PBF MOSFET N-CH 100V 1A 4DIP Vishay Siliconix	29,060 In Stock	1 : $1.69000 Tube	-	Tube	Active	N-Channel	MOSFET (Metal Oxide)	100 V	1A (Ta)	10V	540mOhm @ 600mA, 10V	4V @ 250µA	8.3 nC @ 10 V	±20V	180 pF @ 25 V	-	1.3W (Ta)	-55°C ~ 175°C (TJ)	Through Hole	4-HVMDIP	4-DIP (0.300", 7.62mm)

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Discrete Field Effect Transistors (FETs) are widely used in power conversion, motor control, solid-state lighting, and other applications where their characteristic ability to be switched on & off at high frequencies while carrying substantial amounts of current is advantageous. They are used almost universally for applications requiring voltage ratings of a few hundred volts or less, above which other device types such as IGBTs become more competitive.

Through Hole Single FETs, MOSFETs

Through Hole Single FETs, MOSFETs

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