IXYS Single

Results: 1,120
Series
-CoolMOS™CoolMOS™, HiPerDyn™DepletionFRFET®, SupreMOS®GigaMOS™GigaMOS™, HiPerFET™, TrenchT2™GigaMOS™, TrenchT2™HiPerFET™HiPerFET™, F ClassHiPerFET™, PolarHiPerFET™, Polar3™
Packaging
BoxBulkCut Tape (CT)Digi-Reel®Tape & Reel (TR)TrayTube
Product Status
ActiveDiscontinued at Digi-KeyNot For New DesignsObsolete
FET Type
-N-ChannelP-Channel
Technology
-MOSFET (Metal Oxide)SiCFET (Silicon Carbide)
Drain to Source Voltage (Vdss)
36 V40 V55 V60 V65 V70 V75 V80 V85 V100 V120 V150 V
Current - Continuous Drain (Id) @ 25°C
100mA (Tc)200mA (Tc)250mA (Tc)300mA (Tc)400mA (Tc)500mA (Tc)600mA (Tc)750mA (Tc)1A (Tc)1.4A (Tc)1.5A (Tc)1.6A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
0V10V10V, 15V15V20V-
Rds On (Max) @ Id, Vgs
0.85mOhm @ 100A, 10V1mOhm @ 100A, 10V1.25mOhm @ 100A, 10V1.3mOhm @ 100A, 10V1.35mOhm @ 932A, 10V1.6mOhm @ 100A, 10V1.7mOhm @ 100A, 10V1.7mOhm @ 1600A, 10V1.8mOhm @ 100A, 10V1.8mOhm @ 500mA, 10V1.9mOhm @ 100A, 10V2mOhm @ 100A, 10V
Vgs(th) (Max) @ Id
2.4V @ 10mA2.8V @ 10mA3.4V @ 4mA3.5V @ 1.1mA3.5V @ 250mA3.5V @ 250µA3.5V @ 340µA3.5V @ 3mA3.5V @ 440µA3.5V @ 790µA3.5V @ 900µA3.6V @ 12mA
Gate Charge (Qg) (Max) @ Vgs
3.4 nC @ 10 V3.9 nC @ 10 V5.2 nC @ 10 V5.8 nC @ 5 V6.1 nC @ 10 V6.9 nC @ 10 V7 nC @ 10 V7.4 nC @ 10 V7.5 nC @ 10 V7.8 nC @ 10 V8 nC @ 10 V8.1 nC @ 10 V
Vgs (Max)
+15V, -4V±15V+20V, -5V±20V±30V-
Input Capacitance (Ciss) (Max) @ Vds
54 pF @ 25 V60 pF @ 25 V100 pF @ 25 V116 pF @ 25 V120 pF @ 25 V133 pF @ 25 V140 pF @ 25 V196 pF @ 25 V220 pF @ 25 V240 pF @ 25 V247 pF @ 25 V256 pF @ 25 V
FET Feature
-Depletion Mode
Power Dissipation (Max)
860mW (Ta)1.1W (Ta), 25W (Tc)25W (Tc)30W (Tc)32W (Tc)33W (Tc)36W (Tc)37W (Tc)38W (Tc)40W (Tc)41W (Tc)42W (Tc)
Operating Temperature
-55°C ~ 150°C (TJ)-55°C ~ 175°C (TJ)-40°C ~ 150°C (TJ)-40°C ~ 175°C (TJ)150°C (TJ)-
Grade
-Automotive
Qualification
-AEC-Q101
Mounting Type
-Chassis MountSurface MountThrough Hole
Supplier Device Package
24-SMPD-DE475DieECO-PAC2ISO TO-247-3ISO264™ISOPLUS i4-PAC™ISOPLUS-SMPD™.BISOPLUS220™ISOPLUS247™ISOPLUS264™
Package / Case
3-SIP6-SMD, Flat Leads9-SMD Module24-PowerSMD, 21 Leads24-PowerSMD, 22 Leads-DieECO-PAC2i4-Pac™-5i4-Pac™-5 (3 Leads)ISOPLUS220™ISOPLUSi5-PAK™
Stocking Options
Environmental Options
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Marketplace Product
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Mfr Part #
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Price
Series
Package
Product Status
FET Type
Technology
Drain to Source Voltage (Vdss)
Current - Continuous Drain (Id) @ 25°C
Drive Voltage (Max Rds On, Min Rds On)
Rds On (Max) @ Id, Vgs
Vgs(th) (Max) @ Id
Gate Charge (Qg) (Max) @ Vgs
Vgs (Max)
Input Capacitance (Ciss) (Max) @ Vds
FET Feature
Power Dissipation (Max)
Operating Temperature
Grade
Qualification
Mounting Type
Supplier Device Package
Package / Case
TO-247 Plus X
IXFX64N50Q3
MOSFET N-CH 500V 64A PLUS247-3
IXYS
350
In Stock
1 : $27.63000
Tube
Tube
Active
N-Channel
MOSFET (Metal Oxide)
500 V
64A (Tc)
10V
85mOhm @ 32A, 10V
6.5V @ 4mA
145 nC @ 10 V
±30V
6950 pF @ 25 V
-
1000W (Tc)
-55°C ~ 150°C (TJ)
-
-
Through Hole
PLUS247™-3
TO-247-3 Variant
IXBF12N300
IXTF02N450
MOSFET N-CH 4500V 200MA I4PAC
IXYS
432
In Stock
1 : $43.61000
Tube
-
Tube
Active
N-Channel
MOSFET (Metal Oxide)
4500 V
200mA (Tc)
10V
750Ohm @ 10mA, 10V
6.5V @ 250µA
10.4 nC @ 10 V
±20V
256 pF @ 25 V
-
78W (Tc)
-55°C ~ 150°C (TJ)
-
-
Through Hole
ISOPLUS i4-PAC™
i4-Pac™-5 (3 Leads)
IXYK1x0xNxxxx
IXKN75N60C
MOSFET N-CH 600V 75A SOT-227B
IXYS
456
In Stock
1 : $67.36000
Tube
Tube
Active
N-Channel
MOSFET (Metal Oxide)
600 V
75A (Tc)
10V
36mOhm @ 50A, 10V
3.9V @ 5mA
500 nC @ 10 V
±20V
-
-
560W (Tc)
-40°C ~ 150°C (TJ)
-
-
Chassis Mount
SOT-227B
SOT-227-4, miniBLOC
TO-247-AD-EP-(H)
IXTH26P20P
MOSFET P-CH 200V 26A TO247
IXYS
238
In Stock
1 : $6.30000
Tube
Tube
Active
P-Channel
MOSFET (Metal Oxide)
200 V
26A (Tc)
10V
170mOhm @ 13A, 10V
4V @ 250µA
56 nC @ 10 V
±20V
2740 pF @ 25 V
-
300W (Tc)
-55°C ~ 175°C (TJ)
-
-
Through Hole
TO-247 (IXTH)
TO-247-3
TO-3P
IXFQ34N50P3
MOSFET N-CH 500V 34A TO3P
IXYS
288
In Stock
420
Factory
1 : $8.23000
Tube
Tube
Active
N-Channel
MOSFET (Metal Oxide)
500 V
34A (Tc)
10V
170mOhm @ 17A, 10V
5V @ 4mA
60 nC @ 10 V
±30V
3260 pF @ 25 V
-
695W (Tc)
-55°C ~ 150°C (TJ)
-
-
Through Hole
TO-3P
TO-3P-3, SC-65-3
TO-247-AD-EP-(H)
IXTH1N200P3
MOSFET N-CH 2000V 1A TO247
IXYS
852
In Stock
1 : $8.46000
Tube
Tube
Active
N-Channel
MOSFET (Metal Oxide)
2000 V
1A (Tc)
10V
40Ohm @ 500mA, 10V
4V @ 250µA
23.5 nC @ 10 V
±20V
646 pF @ 25 V
-
125W (Tc)
-55°C ~ 150°C (TJ)
-
-
Through Hole
TO-247 (IXTH)
TO-247-3
TO-220-3
IXFP6N120P
MOSFET N-CH 1200V 6A TO220AB
IXYS
166
In Stock
1 : $9.84000
Tube
Tube
Active
N-Channel
MOSFET (Metal Oxide)
1200 V
6A (Tc)
10V
2.4Ohm @ 500mA, 10V
5V @ 1mA
92 nC @ 10 V
±30V
2830 pF @ 25 V
-
250W (Tc)
-55°C ~ 150°C (TJ)
-
-
Through Hole
TO-220-3
TO-220-3
TO-247_IXFH
IXFH50N20
MOSFET N-CH 200V 50A TO247AD
IXYS
270
In Stock
1 : $11.94000
Tube
Tube
Active
N-Channel
MOSFET (Metal Oxide)
200 V
50A (Tc)
10V
45mOhm @ 25A, 10V
4V @ 4mA
220 nC @ 10 V
±20V
4400 pF @ 25 V
-
300W (Tc)
-55°C ~ 150°C (TJ)
-
-
Through Hole
TO-247AD (IXFH)
TO-247-3
TO-3P
IXTQ60N20L2
MOSFET N-CH 200V 60A TO3P
IXYS
149
In Stock
450
Factory
1 : $18.63000
Tube
Tube
Active
N-Channel
MOSFET (Metal Oxide)
200 V
60A (Tc)
10V
45mOhm @ 30A, 10V
4.5V @ 250µA
255 nC @ 10 V
±20V
10500 pF @ 25 V
-
540W (Tc)
-55°C ~ 150°C (TJ)
-
-
Through Hole
TO-3P
TO-3P-3, SC-65-3
TO-268
IXTT110N10L2
MOSFET N-CH 100V 110A TO268
IXYS
242
In Stock
1 : $20.68000
Tube
Tube
Active
N-Channel
MOSFET (Metal Oxide)
100 V
110A (Tc)
10V
18mOhm @ 55A, 10V
4.5V @ 250µA
260 nC @ 10 V
±20V
10500 pF @ 25 V
-
600W (Tc)
-55°C ~ 150°C (TJ)
-
-
Surface Mount
TO-268AA
TO-268-3, D3PAK (2 Leads + Tab), TO-268AA
SMPD
MMIX1F520N075T2
MOSFET N-CH 75V 500A 24SMPD
IXYS
236
In Stock
1 : $23.39000
Tube
Tube
Active
N-Channel
MOSFET (Metal Oxide)
75 V
500A (Tc)
10V
1.6mOhm @ 100A, 10V
5V @ 8mA
545 nC @ 10 V
±20V
41000 pF @ 25 V
-
830W (Tc)
-55°C ~ 175°C (TJ)
-
-
Surface Mount
24-SMPD
24-PowerSMD, 21 Leads
IXYK1x0xNxxxx
IXFN80N50Q3
MOSFET N-CH 500V 63A SOT227B
IXYS
148
In Stock
1 : $52.40000
Tube
Tube
Active
N-Channel
MOSFET (Metal Oxide)
500 V
63A (Tc)
10V
65mOhm @ 40A, 10V
6.5V @ 8mA
200 nC @ 10 V
±30V
10000 pF @ 25 V
-
780W (Tc)
-55°C ~ 150°C (TJ)
-
-
Chassis Mount
SOT-227B
SOT-227-4, miniBLOC
IXYK1x0xNxxxx
IXFN32N120P
MOSFET N-CH 1200V 32A SOT-227B
IXYS
400
In Stock
1 : $71.99000
Tube
Tube
Active
N-Channel
MOSFET (Metal Oxide)
1200 V
32A (Tc)
10V
310mOhm @ 500mA, 10V
6.5V @ 1mA
360 nC @ 10 V
±30V
21000 pF @ 25 V
-
1000W (Tc)
-55°C ~ 150°C (TJ)
-
-
Chassis Mount
SOT-227B
SOT-227-4, miniBLOC
TO-251
IXTU02N50D
MOSFET N-CH 500V 200MA TO251
IXYS
368
In Stock
1 : $1.34000
Tube
Tube
Active
N-Channel
MOSFET (Metal Oxide)
500 V
200mA (Tc)
10V
30Ohm @ 50mA, 0V
5V @ 25µA
-
±20V
120 pF @ 25 V
Depletion Mode
1.1W (Ta), 25W (Tc)
-55°C ~ 150°C (TJ)
-
-
Through Hole
TO-251AA
TO-251-3 Short Leads, IPAK, TO-251AA
TO-252-3
IXTY02N50D
MOSFET N-CH 500V 200MA TO252
IXYS
318
In Stock
2,940
Factory
1 : $2.40000
Tube
Tube
Active
N-Channel
MOSFET (Metal Oxide)
500 V
200mA (Tc)
-
30Ohm @ 50mA, 0V
-
-
±20V
120 pF @ 25 V
Depletion Mode
1.1W (Ta), 25W (Tc)
-55°C ~ 150°C (TJ)
-
-
Surface Mount
TO-252AA
TO-252-3, DPAK (2 Leads + Tab), SC-63
TO-3P
IXFQ20N50P3
MOSFET N-CH 500V 20A TO3P
IXYS
294
In Stock
300 : $2.97823
Tube
Tube
Active
N-Channel
MOSFET (Metal Oxide)
500 V
20A (Tc)
10V
300mOhm @ 10A, 10V
5V @ 1.5mA
36 nC @ 10 V
±30V
1800 pF @ 25 V
-
380W (Tc)
-55°C ~ 150°C (TJ)
-
-
Through Hole
TO-3P
TO-3P-3, SC-65-3
TO-220
IXFP8N85X
MOSFET N-CH 850V 8A TO220AB
IXYS
279
In Stock
850
Factory
1 : $3.22000
Tube
Tube
Active
N-Channel
MOSFET (Metal Oxide)
850 V
8A (Tc)
10V
850mOhm @ 4A, 10V
5.5V @ 250µA
17 nC @ 10 V
±30V
654 pF @ 25 V
-
200W (Tc)
-55°C ~ 150°C (TJ)
-
-
Through Hole
TO-220AB (IXFP)
TO-220-3
TO-263AB
IXTA90N075T2
MOSFET N-CH 75V 90A TO263
IXYS
262
In Stock
1 : $3.31000
Tube
Tube
Active
N-Channel
MOSFET (Metal Oxide)
75 V
90A (Tc)
10V
10mOhm @ 25A, 10V
4V @ 250µA
54 nC @ 10 V
±20V
3290 pF @ 25 V
-
180W (Tc)
-55°C ~ 175°C (TJ)
-
-
Surface Mount
TO-263AA
TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
TO-220-3
IXFP12N50P
MOSFET N-CH 500V 12A TO220AB
IXYS
278
In Stock
450
Factory
1 : $3.99000
Tube
Tube
Active
N-Channel
MOSFET (Metal Oxide)
500 V
12A (Tc)
10V
500mOhm @ 6A, 10V
5.5V @ 1mA
29 nC @ 10 V
±30V
1830 pF @ 25 V
-
200W (Tc)
-55°C ~ 150°C (TJ)
-
-
Through Hole
TO-220-3
TO-220-3
IXFP30N25X3M
IXFP36N20X3M
MOSFET N-CH 200V 36A TO220
IXYS
300
In Stock
1 : $4.58000
Tube
Tube
Active
N-Channel
MOSFET (Metal Oxide)
200 V
36A (Tc)
10V
45mOhm @ 18A, 10V
4.5V @ 500µA
21 nC @ 10 V
±20V
1425 pF @ 25 V
-
36W (Tc)
-55°C ~ 150°C (TJ)
-
-
Through Hole
TO-220 Isolated Tab
TO-220-3 Full Pack, Isolated Tab
TO-220-3
IXFP16N50P3
MOSFET N-CH 500V 16A TO220AB
IXYS
183
In Stock
1 : $5.30000
Tube
Tube
Active
N-Channel
MOSFET (Metal Oxide)
500 V
16A (Tc)
10V
360mOhm @ 8A, 10V
5V @ 2.5mA
29 nC @ 10 V
±30V
1515 pF @ 25 V
-
330W (Tc)
-55°C ~ 150°C (TJ)
-
-
Through Hole
TO-220-3
TO-220-3
TO-247
IXTH22N50P
MOSFET N-CH 500V 22A TO247
IXYS
144
In Stock
1 : $6.50000
Tube
Tube
Active
N-Channel
MOSFET (Metal Oxide)
500 V
22A (Tc)
10V
270mOhm @ 11A, 10V
5.5V @ 250µA
50 nC @ 10 V
±30V
2630 pF @ 25 V
-
350W (Tc)
-55°C ~ 150°C (TJ)
-
-
Through Hole
TO-247 (IXTH)
TO-247-3
TO-3P
IXFQ22N60P3
MOSFET N-CH 600V 22A TO3P
IXYS
267
In Stock
1 : $9.48000
Tube
Tube
Active
N-Channel
MOSFET (Metal Oxide)
600 V
22A (Tc)
10V
360mOhm @ 11A, 10V
5V @ 1.5mA
38 nC @ 10 V
±30V
2600 pF @ 25 V
-
500W (Tc)
-55°C ~ 150°C (TJ)
-
-
Through Hole
TO-3P
TO-3P-3, SC-65-3
TO-3P
IXFQ50N50P3
MOSFET N-CH 500V 50A TO3P
IXYS
264
In Stock
1 : $10.49000
Tube
Tube
Active
N-Channel
MOSFET (Metal Oxide)
500 V
50A (Tc)
10V
120mOhm @ 25A, 10V
5V @ 4mA
85 nC @ 10 V
±30V
4335 pF @ 25 V
-
960W (Tc)
-55°C ~ 150°C (TJ)
-
-
Through Hole
TO-3P
TO-3P-3, SC-65-3
TO-3P
IXFQ94N30P3
MOSFET N-CH 300V 94A TO3P
IXYS
133
In Stock
1 : $11.21000
Tube
Tube
Active
N-Channel
MOSFET (Metal Oxide)
300 V
94A (Tc)
10V
36mOhm @ 47A, 10V
5V @ 4mA
102 nC @ 10 V
±20V
5510 pF @ 25 V
-
1040W (Tc)
-55°C ~ 150°C (TJ)
-
-
Through Hole
TO-3P
TO-3P-3, SC-65-3
Showing
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IXYS Single

Discrete Field Effect Transistors (FETs) are widely used in power conversion, motor control, solid-state lighting, and other applications where their characteristic ability to be switched on & off at high frequencies while carrying substantial amounts of current is advantageous. They are used almost universally for applications requiring voltage ratings of a few hundred volts or less, above which other device types such as IGBTs become more competitive.