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Mfr Part #
Quantity Available
Price
Series
Package
Product Status
FET Type
Technology
Drain to Source Voltage (Vdss)
Current - Continuous Drain (Id) @ 25°C
Drive Voltage (Max Rds On, Min Rds On)
Rds On (Max) @ Id, Vgs
Vgs(th) (Max) @ Id
Gate Charge (Qg) (Max) @ Vgs
Vgs (Max)
Input Capacitance (Ciss) (Max) @ Vds
FET Feature
Power Dissipation (Max)
Operating Temperature
Mounting Type
Supplier Device Package
Package / Case
TEXTISLM3671TLX-1.2/NOPB
FDZ293P
MOSFET P-CH 20V 4.6A 9BGA
Fairchild Semiconductor
50,621
Marketplace
1,158 : $0.26000
Bulk
Bulk
ObsoleteP-ChannelMOSFET (Metal Oxide)20 V4.6A (Ta)2.5V, 4.5V46mOhm @ 4.6A, 4.5V1.5V @ 250µA11 nC @ 4.5 V±12V754 pF @ 10 V-1.7W (Ta)-55°C ~ 150°C (TJ)Surface Mount9-BGA (1.5x1.6)9-VFBGA
TEXTISLM3671TLX-1.2/NOPB
FDZ294N
MOSFET N-CH 20V 6A 9BGA
Fairchild Semiconductor
53,580
Marketplace
290 : $1.04000
Bulk
Bulk
ObsoleteN-ChannelMOSFET (Metal Oxide)20 V6A (Ta)2.5V, 4.5V23mOhm @ 6A, 4.5V1.5V @ 250µA10 nC @ 4.5 V±12V670 pF @ 10 V-1.7W (Ta)-55°C ~ 150°C (TJ)Surface Mount9-BGA (1.5x1.6)9-VFBGA
FDZ294N
FDZ293P
MOSFET P-CH 20V 4.6A 9BGA
onsemi
0
In Stock
Obsolete
Tape & Reel (TR)
ObsoleteP-ChannelMOSFET (Metal Oxide)20 V4.6A (Ta)2.5V, 4.5V46mOhm @ 4.6A, 4.5V1.5V @ 250µA11 nC @ 4.5 V±12V754 pF @ 10 V-1.7W (Ta)-55°C ~ 150°C (TJ)Surface Mount9-BGA (1.5x1.6)9-VFBGA
FDZ291P
FDZ291P
MOSFET P-CH 20V 4.6A 9BGA
onsemi
0
In Stock
Obsolete
Tape & Reel (TR)
ObsoleteP-ChannelMOSFET (Metal Oxide)20 V4.6A (Ta)1.5V, 4.5V40mOhm @ 4.6A, 4.5V1V @ 250µA13 nC @ 4.5 V±8V1010 pF @ 10 V-1.7W (Ta)-55°C ~ 150°C (TJ)Surface Mount9-BGA (1.5x1.6)9-VFBGA
FDZ294N
FDZ294N
MOSFET N-CH 20V 6A 9BGA
onsemi
0
In Stock
Obsolete
Tape & Reel (TR)
ObsoleteN-ChannelMOSFET (Metal Oxide)20 V6A (Ta)2.5V, 4.5V23mOhm @ 6A, 4.5V1.5V @ 250µA10 nC @ 4.5 V±12V670 pF @ 10 V-1.7W (Ta)-55°C ~ 150°C (TJ)Surface Mount9-BGA (1.5x1.6)9-VFBGA
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9-VFBGA Single FETs, MOSFETs


Discrete Field Effect Transistors (FETs) are widely used in power conversion, motor control, solid-state lighting, and other applications where their characteristic ability to be switched on & off at high frequencies while carrying substantial amounts of current is advantageous. They are used almost universally for applications requiring voltage ratings of a few hundred volts or less, above which other device types such as IGBTs become more competitive.