68A (Tc) Single FETs, MOSFETs

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of 36

Mfr Part #	Quantity Available	Price	Series	Package	Product Status	FET Type	Technology	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)	Rds On (Max) @ Id, Vgs	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Vgs (Max)	Input Capacitance (Ciss) (Max) @ Vds	FET Feature	Power Dissipation (Max)	Operating Temperature	Mounting Type	Supplier Device Package	Package / Case

PSMN013-100PS,127 MOSFET N-CH 100V 68A TO220AB Nexperia USA Inc.	10,105 In Stock	1 : $2.33000 Tube	-	Tube	Active	N-Channel	MOSFET (Metal Oxide)	100 V	68A (Tc)	10V	13.9mOhm @ 15A, 10V	4V @ 1mA	59 nC @ 10 V	±20V	3195 pF @ 50 V	-	170W (Tc)	-55°C ~ 175°C (TJ)	Through Hole	TO-220AB	TO-220-3
IXTT68P20T MOSFET P-CH 200V 68A TO268 IXYS	105 In Stock	1 : $20.68000 Tube	TrenchP™	Tube	Active	P-Channel	MOSFET (Metal Oxide)	200 V	68A (Tc)	10V	55mOhm @ 34A, 10V	4V @ 250µA	380 nC @ 10 V	±15V	33400 pF @ 25 V	-	568W (Tc)	-55°C ~ 150°C (TJ)	Surface Mount	TO-268AA	TO-268-3, D³Pak (2 Leads + Tab), TO-268AA
C3M0032120J1 1200V 32MOHM SIC MOSFET Wolfspeed, Inc.	1,904 In Stock	1 : $32.90000 Tube	C3M™	Tube	Active	N-Channel	SiCFET (Silicon Carbide)	1200 V	68A (Tc)	15V	43mOhm @ 41.4A, 15V	3.6V @ 11.5mA	111 nC @ 15 V	+15V, -4V	3424 pF @ 1000 V	-	277W (Tc)	-40°C ~ 150°C (TJ)	Surface Mount	TO-263-7	TO-263-8, D²Pak (7 Leads + Tab), TO-263CA
NTHL022N120M3S SILICON CARBIDE (SIC) MOSFET ELI onsemi	450 In Stock	1 : $36.15000 Tube	-	Tube	Active	N-Channel	SiCFET (Silicon Carbide)	1200 V	68A (Tc)	18V	30mOhm @ 40A, 18V	4.4V @ 20mA	139 nC @ 18 V	+22V, -10V	3130 pF @ 800 V	-	352W (Tc)	-55°C ~ 175°C (TJ)	Through Hole	TO-247-3	TO-247-3
IXFN70N120SK SICFET N-CH 1200V 68A SOT227B IXYS	13 In Stock	1 : $132.07000 Tube	-	Tube	Active	N-Channel	SiCFET (Silicon Carbide)	1200 V	68A (Tc)	20V	34mOhm @ 50A, 20V	4V @ 15mA	161 nC @ 20 V	+20V, -5V	2790 pF @ 1000 V	-	-	-40°C ~ 175°C (TJ)	Chassis Mount	SOT-227B	SOT-227-4, miniBLOC
PSMN013-100BS,118 MOSFET N-CH 100V 68A D2PAK Nexperia USA Inc.	45 In Stock	1 : $1.76000 Cut Tape (CT) 800 : $1.04370 Tape & Reel (TR)	-	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Active	N-Channel	MOSFET (Metal Oxide)	100 V	68A (Tc)	10V	13.9mOhm @ 15A, 10V	4V @ 1mA	59 nC @ 10 V	±20V	3195 pF @ 50 V	-	170W (Tc)	-55°C ~ 175°C (TJ)	Surface Mount	D2PAK	TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
NTH4L022N120M3S SIC MOS TO247-4L 22MOHM 1200V onsemi	0 In Stock Check Lead Time	1 : $29.19000 Tube	-	Tube	Active	N-Channel	SiCFET (Silicon Carbide)	1200 V	68A (Tc)	18V	30mOhm @ 40A, 18V	4.4V @ 20mA	151 nC @ 18 V	+22V, -10V	3175 pF @ 800 V	-	352W (Tc)	-55°C ~ 175°C (TJ)	Through Hole	TO-247-4L	TO-247-4
MSC035SMA170B MOSFET SIC 1700 V 45 MOHM TO-247 Microchip Technology	0 In Stock Check Lead Time	1 : $40.57000 Tube	-	Tube	Active	N-Channel	SiCFET (Silicon Carbide)	1700 V	68A (Tc)	20V	45mOhm @ 30A, 20V	3.25V @ 2.5mA (Typ)	178 nC @ 20 V	+23V, -10V	3300 pF @ 1000 V	-	370W (Tc)	-60°C ~ 175°C (TJ)	Through Hole	TO-247-3	TO-247-3
MSC035SMA170B4 MOSFET SIC 1700V 35 MOHM TO-247- Microchip Technology	0 In Stock Check Lead Time	1 : $41.80000 Bulk	-	Bulk	Active	N-Channel	SiCFET (Silicon Carbide)	1700 V	68A (Tc)	20V	45mOhm @ 30A, 20V	3.25V @ 2.5mA (Typ)	178 nC @ 20 V	+23V, -10V	3300 pF @ 1000 V	-	370W (Tc)	-55°C ~ 175°C (TJ)	Through Hole	TO-247-4	TO-247-4
TK4R3A06PL,S4X MOSFET N-CH 60V 68A TO220SIS Toshiba Semiconductor and Storage	2 In Stock	1 : $1.33000 Tube	U-MOSIX-H	Tube	Active	N-Channel	MOSFET (Metal Oxide)	60 V	68A (Tc)	4.5V, 10V	7.2mOhm @ 15A, 4.5V	2.5V @ 500µA	48.2 nC @ 10 V	±20V	3280 pF @ 30 V	-	36W (Tc)	175°C (TJ)	Through Hole	TO-220SIS	TO-220-3 Full Pack
STW70N60M2 MOSFET N-CH 600V 68A TO247 STMicroelectronics	0 In Stock Check Lead Time	1 : $11.36000 Tube	MDmesh™ II Plus	Tube	Active	N-Channel	MOSFET (Metal Oxide)	600 V	68A (Tc)	10V	40mOhm @ 34A, 10V	4V @ 250µA	118 nC @ 10 V	±25V	5200 pF @ 100 V	-	450W (Tc)	-55°C ~ 150°C (TJ)	Through Hole	TO-247	TO-247-3
PSMQC060N06LS1-AU_R2_006A1 60V/ 6M / AECQ101 QUALIFIED / SO Panjit International Inc.	0 In Stock Check Lead Time	1 : $1.64000 Cut Tape (CT) 3,000 : $0.69090 Tape & Reel (TR)	Automotive, AEC-Q101	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Active	N-Channel	MOSFET (Metal Oxide)	60 V	68A (Tc)	4.5V, 10V	6mOhm @ 20A, 10V	3V @ 250µA	37 nC @ 10 V	±20V	2057 pF @ 30 V	-	50W (Tc)	-55°C ~ 150°C (TJ)	Surface Mount	DFN5060-8	8-PowerVDFN
BSC0303LSATMA1 TRENCH >=100V PG-TDSON-8 Infineon Technologies	0 In Stock Check Lead Time	1 : $1.71000 Cut Tape (CT) 5,000 : $0.75484 Tape & Reel (TR)	OptiMOS™	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Active	N-Channel	MOSFET (Metal Oxide)	120 V	68A (Tc)	4.5V, 10V	12mOhm @ 34A, 10V	2.4V @ 72µA	51 nC @ 10 V	±20V	4900 pF @ 60 V	-	114W (Tc)	-55°C ~ 150°C (TJ)	Surface Mount	PG-TDSON-8	8-PowerTDFN
STW70N65DM6-4 MOSFET N-CH 650V 68A TO247-4 STMicroelectronics	0 In Stock Check Lead Time	1 : $14.41000 Tube	Automotive, AEC-Q101	Tube	Active	N-Channel	MOSFET (Metal Oxide)	650 V	68A (Tc)	10V	40mOhm @ 34A, 10V	4.75V @ 250µA	125 nC @ 10 V	±25V	4900 pF @ 100 V	-	450W (Tc)	-55°C ~ 150°C (TJ)	Through Hole	TO-247-4	TO-247-4
IXTH68P20T MOSFET P-CH 200V 68A TO247 IXYS	10 In Stock 540 Factory	1 : $18.81000 Tube	TrenchP™	Tube	Active	P-Channel	MOSFET (Metal Oxide)	200 V	68A (Tc)	10V	55mOhm @ 34A, 10V	4V @ 250µA	380 nC @ 10 V	±15V	33400 pF @ 25 V	-	568W (Tc)	-55°C ~ 150°C (TJ)	Through Hole	TO-247 (IXTH)	TO-247-3
IXFN94N50P2 MOSFET N-CH 500V 68A SOT227B IXYS	2 In Stock 320 Factory	1 : $31.23000 Tube	HiPerFET™, PolarP2™	Tube	Active	N-Channel	MOSFET (Metal Oxide)	500 V	68A (Tc)	10V	55mOhm @ 500mA, 10V	5V @ 8mA	220 nC @ 10 V	±30V	13700 pF @ 25 V	-	780W (Tc)	-55°C ~ 150°C (TJ)	Chassis Mount	SOT-227B	SOT-227-4, miniBLOC
NVH4L022N120M3S SIC MOS TO247-4L 22MOHM 1200V onsemi	0 In Stock Check Lead Time	1 : $42.41000 Tube	Automotive, AEC-Q101	Tube	Active	N-Channel	SiCFET (Silicon Carbide)	1200 V	68A (Tc)	18V	30mOhm @ 40A, 18V	4.4V @ 20mA	151 nC @ 18 V	+22V, -10V	3175 pF @ 800 V	-	352W (Tc)	-55°C ~ 175°C (TJ)	Through Hole	TO-247-4L	TO-247-4
DMT15H017SK3-13 MOSFET BVDSS: 101V~250V TO252 T& Diodes Incorporated	0 In Stock Check Lead Time	2,500 : $0.72441 Tape & Reel (TR)	-	Tape & Reel (TR)	Active	N-Channel	MOSFET (Metal Oxide)	150 V	68A (Tc)	8V, 10V	18.5mOhm @ 20A, 10V	4V @ 250µA	34 nC @ 10 V	±20V	2344 pF @ 75 V	-	1.7W (Ta)	-55°C ~ 150°C (TJ)	Surface Mount	TO-252, (D-Pak)	TO-252-3, DPak (2 Leads + Tab), SC-63
BUK7Y15-100EX MOSFET N-CH 100V 68A LFPAK56 Nexperia USA Inc.	0 In Stock	1,500 : $0.78744 Tape & Reel (TR)	Automotive, AEC-Q100, TrenchMOS™	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Last Time Buy	N-Channel	MOSFET (Metal Oxide)	100 V	68A (Tc)	10V	15mOhm @ 20A, 10V	4V @ 1mA	54.5 nC @ 10 V	±20V	3958 pF @ 25 V	-	195W (Tc)	-55°C ~ 175°C (TJ)	Surface Mount	LFPAK56, Power-SO8	SC-100, SOT-669
STW70N60M2-4 MOSFET N-CH 600V 68A TO247 STMicroelectronics	0 In Stock Check Lead Time	600 : $7.92355 Tube	MDmesh™ M2	Tube	Active	N-Channel	MOSFET (Metal Oxide)	600 V	68A (Tc)	10V	40mOhm @ 34A, 10V	4V @ 250µA	118 nC @ 10 V	±25V	5200 pF @ 100 V	-	450W (Tc)	-55°C ~ 150°C (TJ)	Through Hole	TO-247-4	TO-247-4
STW70N65DM6 MOSFET N-CH 650V 68A TO247 STMicroelectronics	0 In Stock Check Lead Time	600 : $9.36402 Tube	MDmesh™ DM6	Tube	Active	N-Channel	MOSFET (Metal Oxide)	650 V	68A (Tc)	10V	40mOhm @ 34A, 10V	4.75V @ 250µA	125 nC @ 10 V	±25V	4900 pF @ 100 V	-	450W (Tc)	-55°C ~ 150°C (TJ)	Through Hole	TO-247-3	TO-247-3
STWA70N65DM6 MOSFET N-CH 650V 68A TO247 STMicroelectronics	15 In Stock	1 : $13.71000 Tube	MDmesh™ DM6	Tube	Active	N-Channel	MOSFET (Metal Oxide)	650 V	68A (Tc)	10V	40mOhm @ 34A, 10V	4.75V @ 250µA	125 nC @ 10 V	±25V	4900 pF @ 100 V	-	450W (Tc)	-55°C ~ 150°C (TJ)	Through Hole	TO-247 Long Leads	TO-247-3
AOK033V120X2 1200V SILICON CARBIDE MOSFET Alpha & Omega Semiconductor Inc.	0 In Stock Check Lead Time	240 : $16.35383 Tube	-	Tube	Active	N-Channel	SiC (Silicon Carbide Junction Transistor)	1200 V	68A (Tc)	15V	43mOhm @ 20A, 15V	2.8V @ 17.5mA	104 nC @ 15 V	+15V, -5V	2908 pF @ 800 V	-	300W (Ta)	-55°C ~ 175°C (TJ)	Through Hole	TO-247	TO-247-3
AOK033V120X2Q 1200V SILICON CARBIDE MOSFET Alpha & Omega Semiconductor Inc.	0 In Stock Check Lead Time	240 : $16.35383 Tube	Automotive, AEC-Q101	Tube	Active	N-Channel	SiC (Silicon Carbide Junction Transistor)	1200 V	68A (Tc)	15V	43mOhm @ 20A, 15V	2.8V @ 17.5mA	104 nC @ 15 V	+15V, -5V	2908 pF @ 800 V	-	300W (Ta)	-55°C ~ 175°C (TJ)	Through Hole	TO-247	TO-247-3
AOM033V120X2 1200V SILICON CARBIDE MOSFET Alpha & Omega Semiconductor Inc.	0 In Stock Check Lead Time	240 : $17.90708 Tube	-	Tube	Active	N-Channel	SiC (Silicon Carbide Junction Transistor)	1200 V	68A (Tc)	15V	43mOhm @ 20A, 15V	2.8V @ 17.5mA	104 nC @ 15 V	+15V, -5V	2908 pF @ 800 V	-	300W (Ta)	-55°C ~ 175°C (TJ)	Through Hole	TO-247-4L	TO-247-4

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Discrete Field Effect Transistors (FETs) are widely used in power conversion, motor control, solid-state lighting, and other applications where their characteristic ability to be switched on & off at high frequencies while carrying substantial amounts of current is advantageous. They are used almost universally for applications requiring voltage ratings of a few hundred volts or less, above which other device types such as IGBTs become more competitive.

68A (Tc) Single FETs, MOSFETs

68A (Tc) Single FETs, MOSFETs

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