48A (Ta) Single FETs, MOSFETs

Results: 17
Manufacturer
EPCFairchild SemiconductorMeritekonsemiToshiba Semiconductor and Storage
Series
-eGaN®PowerTrench®U-MOSVII-H
Packaging
BulkCut Tape (CT)Digi-Reel®Tape & Reel (TR)Tube
Product Status
ActiveNot For New DesignsObsolete
Technology
GaNFET (Gallium Nitride)MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
30 V60 V80 V100 V150 V200 V
Drive Voltage (Max Rds On, Min Rds On)
4.5V, 10V5V
Rds On (Max) @ Id, Vgs
2.2mOhm @ 24A, 10V3.2mOhm @ 30A, 5V3.8mOhm @ 25A, 5V4mOhm @ 30A, 5V7mOhm @ 25A, 5V8mOhm @ 20A, 5V10mOhm @ 16A, 10V10mOhm @ 20A, 5V12mOhm @ 24A, 10V13mOhm @ 26A, 10V
Vgs(th) (Max) @ Id
2.3V @ 1mA2.5V @ 11mA2.5V @ 12mA2.5V @ 4mA2.5V @ 7mA2.5V @ 9mA3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
8.8 nC @ 5 V10 nC @ 5 V10.6 nC @ 5 V11 nC @ 5 V13 nC @ 5 V14.8 nC @ 5 V15 nC @ 5 V16.3 nC @ 5 V18 nC @ 5 V21 nC @ 50 V74 nC @ 10 V
Vgs (Max)
+6V, -4V±20V
Input Capacitance (Ciss) (Max) @ Vds
950 pF @ 100 V1140 pF @ 100 V1140 pF @ 75 V1250 pF @ 15 V1290 pF @ 50 V1401 pF @ 100 V1410 pF @ 40 V1530 pF @ 50 V1895 pF @ 50 V2366 pF @ 50 V6200 pF @ 10 V
Power Dissipation (Max)
1.6W (Ta), 63W (Tc)52W (Tc)-
Operating Temperature
-65°C ~ 175°C (TJ)-40°C ~ 150°C (TJ)150°C (TJ)
Mounting Type
Surface MountThrough Hole
Supplier Device Package
7-QFN (3x5)8-SOP Advance (5x5)D2PAK (TO-263)DieD²PAK (TO-263)TO-220-3TO-263AB
Package / Case
7-PowerWQFN8-PowerVDFNDieTO-220-3TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Stocking Options
Environmental Options
Media
Marketplace Product
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Mfr Part #
Quantity Available
Price
Series
Package
Product Status
FET Type
Technology
Drain to Source Voltage (Vdss)
Current - Continuous Drain (Id) @ 25°C
Drive Voltage (Max Rds On, Min Rds On)
Rds On (Max) @ Id, Vgs
Vgs(th) (Max) @ Id
Gate Charge (Qg) (Max) @ Vgs
Vgs (Max)
Input Capacitance (Ciss) (Max) @ Vds
FET Feature
Power Dissipation (Max)
Operating Temperature
Mounting Type
Supplier Device Package
Package / Case
eGaN Series
EPC2032
GANFET N-CH 100V 48A DIE
EPC
2,626
In Stock
1 : $6.85000
Cut Tape (CT)
500 : $4.45936
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
ActiveN-ChannelGaNFET (Gallium Nitride)100 V48A (Ta)5V4mOhm @ 30A, 5V2.5V @ 11mA15 nC @ 5 V+6V, -4V1530 pF @ 50 V---40°C ~ 150°C (TJ)Surface MountDieDie
eGaN Series
EPC2034C
GANFET N-CH 200V 48A DIE
EPC
24,212
In Stock
1 : $8.83000
Cut Tape (CT)
500 : $5.75050
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Not For New DesignsN-ChannelGaNFET (Gallium Nitride)200 V48A (Ta)5V8mOhm @ 20A, 5V2.5V @ 7mA11 nC @ 5 V+6V, -4V1140 pF @ 100 V---40°C ~ 150°C (TJ)Surface MountDieDie
eGaN Series
EPC2033
GANFET N-CH 150V 48A DIE
EPC
7,983
In Stock
1 : $9.46000
Cut Tape (CT)
500 : $6.16124
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Not For New DesignsN-ChannelGaNFET (Gallium Nitride)150 V48A (Ta)-7mOhm @ 25A, 5V2.5V @ 9mA10 nC @ 5 V-1140 pF @ 75 V---Surface MountDieDie
EPC2306ENGRT
EPC2306ENGRT
TRANS GAN 100V .0038OHM3X5MM QFN
EPC
6,303
In Stock
1 : $5.56000
Cut Tape (CT)
3,000 : $2.79300
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
ActiveN-ChannelGaNFET (Gallium Nitride)100 V48A (Ta)5V3.8mOhm @ 25A, 5V2.5V @ 7mA16.3 nC @ 5 V+6V, -4V2366 pF @ 50 V---40°C ~ 150°C (TJ)Surface Mount7-QFN (3x5)7-PowerWQFN
eGaN Series
EPC2029
GANFET N-CH 80V 48A DIE
EPC
40,315
In Stock
1 : $8.33000
Cut Tape (CT)
500 : $5.42190
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Not For New DesignsN-ChannelGaNFET (Gallium Nitride)80 V48A (Ta)5V3.2mOhm @ 30A, 5V2.5V @ 12mA13 nC @ 5 V+6V, -4V1410 pF @ 40 V---40°C ~ 150°C (TJ)Surface MountDieDie
EPC2307ENGRT
EPC2307ENGRT
TRANS GAN 200V .010OHM 7QFN
EPC
8,904
In Stock
1 : $6.25000
Cut Tape (CT)
3,000 : $3.41250
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
ActiveN-ChannelGaNFET (Gallium Nitride)200 V48A (Ta)5V10mOhm @ 16A, 10V2.5V @ 4mA10.6 nC @ 5 V+6V, -4V1401 pF @ 100 V---40°C ~ 150°C (TJ)Surface Mount7-QFN (3x5)7-PowerWQFN
EPC2053
EPC2053
GANFET N-CH 100V 48A DIE
EPC
0
In Stock
1 : $6.88000
Cut Tape (CT)
2,500 : $3.45401
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Not For New DesignsN-ChannelGaNFET (Gallium Nitride)100 V48A (Ta)5V3.8mOhm @ 25A, 5V2.5V @ 9mA14.8 nC @ 5 V+6V, -4V1895 pF @ 50 V---40°C ~ 150°C (TJ)Surface MountDieDie
IRG4RC10UTRPBF
FDB6030L
MOSFET N-CH 30V 48A TO263AB
Fairchild Semiconductor
22,487
Marketplace
614 : $0.49000
Bulk
Bulk
ObsoleteN-ChannelMOSFET (Metal Oxide)30 V48A (Ta)4.5V, 10V13mOhm @ 26A, 10V3V @ 250µA18 nC @ 5 V±20V1250 pF @ 15 V-52W (Tc)-65°C ~ 175°C (TJ)Surface MountD2PAK (TO-263)TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
MC78M05BTG
FDP6030L
MOSFET N-CH 30V 48A TO220-3
Fairchild Semiconductor
61,536
Marketplace
566 : $0.53000
Tube
Tube
ObsoleteN-ChannelMOSFET (Metal Oxide)30 V48A (Ta)4.5V, 10V13mOhm @ 26A, 10V3V @ 250µA18 nC @ 5 V±20V1250 pF @ 15 V-52W (Tc)-65°C ~ 175°C (TJ)Through HoleTO-220-3TO-220-3
IRG4RC10UTRPBF
FDB6035AL
N-CHANNEL POWER MOSFET
Fairchild Semiconductor
172,290
Marketplace
224 : $1.34000
Bulk
Bulk
ActiveN-ChannelMOSFET (Metal Oxide)30 V48A (Ta)4.5V, 10V12mOhm @ 24A, 10V3V @ 250µA18 nC @ 5 V±20V1250 pF @ 15 V-52W (Tc)-65°C ~ 175°C (TJ)Surface MountTO-263ABTO-263-3, D²Pak (2 Leads + Tab), TO-263AB
SGP15N60XKSA1
FDP6035AL
MOSFET N-CH 30V 48A TO220-3
Fairchild Semiconductor
106,637
Marketplace
221 : $1.36000
Tube
Tube
ObsoleteN-ChannelMOSFET (Metal Oxide)30 V48A (Ta)4.5V, 10V12mOhm @ 24A, 10V3V @ 250µA18 nC @ 5 V±20V1250 pF @ 15 V-52W (Tc)-65°C ~ 175°C (TJ)Through HoleTO-220-3TO-220-3
MFT6N48T252
MFT6N48T252
MOSFET N 60V 48A 188W TO-252
Meritek
100
Marketplace
10 : $0.80000
Tape & Reel (TR)
-
Tape & Reel (TR)
ActiveN-ChannelMOSFET (Metal Oxide)60 V48A (Ta)---21 nC @ 50 V-1290 pF @ 50 V------
eGaN Series
EPC2034
GANFET N-CH 200V 48A DIE
EPC
0
In Stock
Obsolete
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
ObsoleteN-ChannelGaNFET (Gallium Nitride)200 V48A (Ta)5V10mOhm @ 20A, 5V2.5V @ 7mA8.8 nC @ 5 V+6V, -4V950 pF @ 100 V---40°C ~ 150°C (TJ)Surface MountDieDie
TO-220-3
FDP6030L
MOSFET N-CH 30V 48A TO220-3
onsemi
0
In Stock
Obsolete
Tube
ObsoleteN-ChannelMOSFET (Metal Oxide)30 V48A (Ta)4.5V, 10V13mOhm @ 26A, 10V3V @ 250µA18 nC @ 5 V±20V1250 pF @ 15 V-52W (Tc)-65°C ~ 175°C (TJ)Through HoleTO-220-3TO-220-3
D2PAK
FDB6030L
MOSFET N-CH 30V 48A TO263AB
onsemi
0
In Stock
Obsolete
Tape & Reel (TR)
ObsoleteN-ChannelMOSFET (Metal Oxide)30 V48A (Ta)4.5V, 10V13mOhm @ 26A, 10V3V @ 250µA18 nC @ 5 V±20V1250 pF @ 15 V-52W (Tc)-65°C ~ 175°C (TJ)Surface MountD²PAK (TO-263)TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
TO-220-3
FDP6035AL
MOSFET N-CH 30V 48A TO220-3
onsemi
0
In Stock
Obsolete
Tube
ObsoleteN-ChannelMOSFET (Metal Oxide)30 V48A (Ta)4.5V, 10V12mOhm @ 24A, 10V3V @ 250µA18 nC @ 5 V±20V1250 pF @ 15 V-52W (Tc)-65°C ~ 175°C (TJ)Through HoleTO-220-3TO-220-3
8-PowerVDFN PKG
TPCA8056-H,LQ(M
MOSFET N-CH 30V 48A 8SOP
Toshiba Semiconductor and Storage
0
In Stock
Obsolete
Tape & Reel (TR)
ObsoleteN-ChannelMOSFET (Metal Oxide)30 V48A (Ta)4.5V, 10V2.2mOhm @ 24A, 10V2.3V @ 1mA74 nC @ 10 V±20V6200 pF @ 10 V-1.6W (Ta), 63W (Tc)150°C (TJ)Surface Mount8-SOP Advance (5x5)8-PowerVDFN
Showing
of 17

48A (Ta) Single FETs, MOSFETs

Discrete Field Effect Transistors (FETs) are widely used in power conversion, motor control, solid-state lighting, and other applications where their characteristic ability to be switched on & off at high frequencies while carrying substantial amounts of current is advantageous. They are used almost universally for applications requiring voltage ratings of a few hundred volts or less, above which other device types such as IGBTs become more competitive.