47.2A (Tc) Single FETs, MOSFETs

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Mfr Part #	Quantity Available	Price	Series	Package	Product Status	FET Type	Technology	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)	Rds On (Max) @ Id, Vgs	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Vgs (Max)	Input Capacitance (Ciss) (Max) @ Vds	FET Feature	Power Dissipation (Max)	Operating Temperature	Grade	Qualification	Mounting Type	Supplier Device Package	Package / Case

TP65H035G4WSQA 650 V 46.5 GAN FET Transphorm	301 In Stock	1 : $19.32000 Tube	-	Tube	Active	N-Channel	GaNFET (Gallium Nitride)	650 V	47.2A (Tc)	10V	41mOhm @ 30A, 10V	4.8V @ 1mA	22 nC @ 10 V	±20V	1500 pF @ 400 V	-	187W (Tc)	-55°C ~ 175°C (TJ)	Automotive	AEC-Q101	Through Hole	TO-247-3	TO-247-3
TP65H035WSQA GANFET N-CH 650V 47.2A TO247-3 Transphorm	205 In Stock	1 : $21.31000 Tube	-	Tube	Active	N-Channel	GaNFET (Cascode Gallium Nitride FET)	650 V	47.2A (Tc)	10V	41mOhm @ 32A, 10V	4.5V @ 1mA	24 nC @ 10 V	±20V	1500 pF @ 400 V	-	187W (Tc)	-55°C ~ 175°C (TJ)	Automotive	AEC-Q101	Through Hole	TO-247-3	TO-247-3
DMT10H025LK3-13 MOSFET N-CH 100V 47.2A TO252 T&R Diodes Incorporated	0 In Stock 10,000 Factory Check Lead Time	1 : $0.78000 Cut Tape (CT) 2,500 : $0.29591 Tape & Reel (TR)	-	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Active	N-Channel	MOSFET (Metal Oxide)	100 V	47.2A (Tc)	4.5V, 10V	22mOhm @ 20A, 10V	3V @ 250µA	21 nC @ 10 V	±20V	1477 pF @ 50 V	-	2.6W (Ta)	-55°C ~ 150°C (TJ)	Automotive	AEC-Q101	Surface Mount	TO-252, (D-Pak)	TO-252-3, DPak (2 Leads + Tab), SC-63

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Discrete Field Effect Transistors (FETs) are widely used in power conversion, motor control, solid-state lighting, and other applications where their characteristic ability to be switched on & off at high frequencies while carrying substantial amounts of current is advantageous. They are used almost universally for applications requiring voltage ratings of a few hundred volts or less, above which other device types such as IGBTs become more competitive.