3-XDFN Single FETs, MOSFETs

Results: 7
Manufacturer
Diodes IncorporatedNexperia USA Inc.
Series
-Automotive, AEC-Q101TrenchMOS™
Packaging
BulkCut Tape (CT)Digi-Reel®Tape & Reel (TR)
FET Type
N-ChannelP-Channel
Drain to Source Voltage (Vdss)
12 V16 V20 V60 V
Current - Continuous Drain (Id) @ 25°C
400mA (Ta)2.5A (Ta)4.7A (Ta)7.5A (Ta)11A (Ta)
Drive Voltage (Max Rds On, Min Rds On)
1.5V, 4.5V1.5V, 4V1.8V, 3.3V1.8V, 4.5V
Rds On (Max) @ Id, Vgs
16mOhm @ 5A, 4.5V17mOhm @ 5A, 3.3V39mOhm @ 4A, 4.5V45mOhm @ 4A, 4.5V54mOhm @ 2.5A, 4.5V2Ohm @ 100mA, 4V
Vgs(th) (Max) @ Id
900mV @ 250µA1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
0.55 nC @ 4.5 V6.8 nC @ 4.5 V9.1 nC @ 4.5 V10 nC @ 4.5 V12 nC @ 3.3 V16 nC @ 3.3 V
Vgs (Max)
±8V±20V
Input Capacitance (Ciss) (Max) @ Vds
36 pF @ 25 V214 pF @ 10 V282 pF @ 10 V634 pF @ 10 V855 pF @ 6 V1503 pF @ 6 V
Power Dissipation (Max)
500mW530mW650mW (Ta)650mW670mW (Ta)1.2W (Ta), 31W (Tc)1.47W
Supplier Device Package
DSN1010-3U-DFN1212-3X2-DFN2015-3X3-DSN1010-3
Stocking Options
Environmental Options
Media
Marketplace Product
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Mfr Part #
Quantity Available
Price
Series
Package
Product Status
FET Type
Technology
Drain to Source Voltage (Vdss)
Current - Continuous Drain (Id) @ 25°C
Drive Voltage (Max Rds On, Min Rds On)
Rds On (Max) @ Id, Vgs
Vgs(th) (Max) @ Id
Gate Charge (Qg) (Max) @ Vgs
Vgs (Max)
Input Capacitance (Ciss) (Max) @ Vds
FET Feature
Power Dissipation (Max)
Operating Temperature
Mounting Type
Supplier Device Package
Package / Case
X2-DFN2015-3
DMG3415UFY4Q-7
MOSFET P-CH 16V 2.5A X2-DFN2015
Diodes Incorporated
78,732
In Stock
1 : $0.40000
Cut Tape (CT)
3,000 : $0.14245
Tape & Reel (TR)
-
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
ActiveP-ChannelMOSFET (Metal Oxide)16 V2.5A (Ta)1.8V, 4.5V39mOhm @ 4A, 4.5V1V @ 250µA10 nC @ 4.5 V±8V282 pF @ 10 V-650mW (Ta)-55°C ~ 150°C (TJ)Surface MountX2-DFN2015-33-XDFN
PMCA14UNYL
PMCA14UNYL
SMALL SIGNAL MOSFET FOR MOBILE
Nexperia USA Inc.
5,000
In Stock
5,000 : $0.15986
Tape & Reel (TR)
Tape & Reel (TR)
ActiveN-ChannelMOSFET (Metal Oxide)12 V11A (Ta)1.8V, 4.5V16mOhm @ 5A, 4.5V900mV @ 250µA12 nC @ 3.3 V±8V855 pF @ 6 V-1.2W (Ta), 31W (Tc)-55°C ~ 150°C (TJ)Surface MountDSN1010-33-XDFN
X2-DFN2015-3
DMP2045UFY4-7
MOSFET P-CH 20V 4.7A X2-DFN2015
Diodes Incorporated
2,970
In Stock
1 : $0.35000
Cut Tape (CT)
3,000 : $0.10049
Tape & Reel (TR)
-
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
ActiveP-ChannelMOSFET (Metal Oxide)20 V4.7A (Ta)1.5V, 4.5V45mOhm @ 4A, 4.5V1V @ 250µA6.8 nC @ 4.5 V±8V634 pF @ 10 V-670mW (Ta)-55°C ~ 150°C (TJ)Surface MountX2-DFN2015-33-XDFN
MOSFET N-CH 60V 400MA 3DFN T&R 1
DMN62D1LFDQ-13
MOSFET N-CH 60V 400MA 3DFN T&R 1
Diodes Incorporated
0
In Stock
70,000
Factory
Check Lead Time
10,000 : $0.08634
Tape & Reel (TR)
Tape & Reel (TR)
ActiveN-ChannelMOSFET (Metal Oxide)60 V400mA (Ta)1.5V, 4V2Ohm @ 100mA, 4V1V @ 250µA0.55 nC @ 4.5 V±20V36 pF @ 25 V-500mW-55°C ~ 150°C (TJ)Surface MountU-DFN1212-33-XDFN
MOSFET BVDSS: 8V~24V X2-DFN2015-
DMG3415UFY4Q-7-52
MOSFET BVDSS: 8V~24V X2-DFN2015-
Diodes Incorporated
0
In Stock
Check Lead Time
3,000 : $0.11071
Bulk
Bulk
ActiveP-ChannelMOSFET (Metal Oxide)16 V2.5A (Ta)1.8V, 4.5V39mOhm @ 4A, 4.5V1V @ 250µA10 nC @ 4.5 V±8V282 pF @ 10 V-650mW-55°C ~ 150°C (TJ)Surface MountX2-DFN2015-33-XDFN
MOSFET BVDSS: 8V~24V X2-DFN2015-
DMP2069UFY4Q-7
MOSFET BVDSS: 8V~24V X2-DFN2015-
Diodes Incorporated
0
In Stock
Check Lead Time
3,000 : $0.15361
Tape & Reel (TR)
Tape & Reel (TR)
ActiveP-ChannelMOSFET (Metal Oxide)20 V2.5A (Ta)1.8V, 4.5V54mOhm @ 2.5A, 4.5V1V @ 250µA9.1 nC @ 4.5 V±8V214 pF @ 10 V-530mW-55°C ~ 150°C (TJ)Surface MountX2-DFN2015-33-XDFN
MOSFET N-CH 12V 7.5A X3DSN1010-3
DMN1017UCP3-7
MOSFET N-CH 12V 7.5A X3DSN1010-3
Diodes Incorporated
0
In Stock
Check Lead Time
3,000 : $0.20351
Tape & Reel (TR)
-
Tape & Reel (TR)
ActiveN-ChannelMOSFET (Metal Oxide)12 V7.5A (Ta)1.8V, 3.3V17mOhm @ 5A, 3.3V1V @ 250µA16 nC @ 3.3 V±8V1503 pF @ 6 V-1.47W-55°C ~ 150°C (TJ)Surface MountX3-DSN1010-33-XDFN
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3-XDFN Single FETs, MOSFETs

Discrete Field Effect Transistors (FETs) are widely used in power conversion, motor control, solid-state lighting, and other applications where their characteristic ability to be switched on & off at high frequencies while carrying substantial amounts of current is advantageous. They are used almost universally for applications requiring voltage ratings of a few hundred volts or less, above which other device types such as IGBTs become more competitive.