16.5A (Ta), 58A (Tc) Single FETs, MOSFETs

Results: 3
Packaging
Cut Tape (CT)Digi-Reel®Tape & Reel (TR)Tube
Product Status
ActiveObsolete
Mounting Type
Surface MountThrough Hole
Supplier Device Package
TO-251BTO-252 (DPAK)UltraSO-8™
Package / Case
3-PowerSMD, Flat LeadsTO-251-3 Stub Leads, IPAKTO-252-3, DPAK (2 Leads + Tab), SC-63
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Mfr Part #
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Price
Series
Package
Product Status
FET Type
Technology
Drain to Source Voltage (Vdss)
Current - Continuous Drain (Id) @ 25°C
Drive Voltage (Max Rds On, Min Rds On)
Rds On (Max) @ Id, Vgs
Vgs(th) (Max) @ Id
Gate Charge (Qg) (Max) @ Vgs
Vgs (Max)
Input Capacitance (Ciss) (Max) @ Vds
FET Feature
Power Dissipation (Max)
Operating Temperature
Mounting Type
Supplier Device Package
Package / Case
TO-252, (D-Pak)
AOD66923
MOSFET N-CH 100V 16.5A/58A TO252
Alpha & Omega Semiconductor Inc.
15,891
In Stock
1 : $1.08000
Cut Tape (CT)
2,500 : $0.44530
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
ActiveN-ChannelMOSFET (Metal Oxide)100 V16.5A (Ta), 58A (Tc)4.5V, 10V11mOhm @ 20A, 10V2.6V @ 250µA35 nC @ 10 V±20V1725 pF @ 50 V-6.2W (Ta), 73W (Tc)-55°C ~ 150°C (TJ)Surface MountTO-252 (DPAK)TO-252-3, DPAK (2 Leads + Tab), SC-63
TO-251
AOY66923
MOSFET N-CH 100V 16.5/58A TO251B
Alpha & Omega Semiconductor Inc.
5,840
In Stock
1 : $1.23000
Tube
Tube
ActiveN-ChannelMOSFET (Metal Oxide)100 V16.5A (Ta), 58A (Tc)4.5V, 10V11mOhm @ 20A, 10V2.6V @ 250µA35 nC @ 10 V±20V1725 pF @ 50 V-6.2W (Ta), 73W (Tc)-55°C ~ 150°C (TJ)Through HoleTO-251BTO-251-3 Stub Leads, IPAK
UltraSO-8
AOUS66923
MOSFET N-CH 100V 16.5A ULTRASO-8
Alpha & Omega Semiconductor Inc.
0
In Stock
Obsolete
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
ObsoleteN-ChannelMOSFET (Metal Oxide)100 V16.5A (Ta), 58A (Tc)4.5V, 10V11mOhm @ 20A, 10V2.6V @ 250µA35 nC @ 10 V±20V1725 pF @ 50 V-6.2W (Ta), 73W (Tc)-55°C ~ 150°C (TJ)Surface MountUltraSO-8™3-PowerSMD, Flat Leads
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16.5A (Ta), 58A (Tc) Single FETs, MOSFETs


Discrete Field Effect Transistors (FETs) are widely used in power conversion, motor control, solid-state lighting, and other applications where their characteristic ability to be switched on & off at high frequencies while carrying substantial amounts of current is advantageous. They are used almost universally for applications requiring voltage ratings of a few hundred volts or less, above which other device types such as IGBTs become more competitive.