1200 V Single FETs, MOSFETs

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of 525

Mfr Part #	Quantity Available	Price	Series	Package	Product Status	FET Type	Technology	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)	Rds On (Max) @ Id, Vgs	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Vgs (Max)	Input Capacitance (Ciss) (Max) @ Vds	FET Feature	Power Dissipation (Max)	Operating Temperature	Mounting Type	Supplier Device Package	Package / Case

SCT3160KLGC11 SICFET N-CH 1200V 17A TO247N Rohm Semiconductor	623 In Stock This product has a maximum purchase limit	1 : $10.49000 Tube	-	Tube	Active	N-Channel	SiCFET (Silicon Carbide)	1200 V	17A (Tc)	18V	208mOhm @ 5A, 18V	5.6V @ 2.5mA	42 nC @ 18 V	+22V, -4V	398 pF @ 800 V	-	103W (Tc)	175°C (TJ)	Through Hole	TO-247N	TO-247-3
SCT3040KLGC11 SICFET N-CH 1200V 55A TO247N Rohm Semiconductor	1,282 In Stock This product has a maximum purchase limit	1 : $39.74000 Tube	-	Tube	Active	N-Channel	SiCFET (Silicon Carbide)	1200 V	55A (Tc)	18V	52mOhm @ 20A, 18V	5.6V @ 10mA	107 nC @ 18 V	+22V, -4V	1337 pF @ 800 V	-	262W (Tc)	175°C (TJ)	Through Hole	TO-247N	TO-247-3
SCT3022KLGC11 SICFET N-CH 1200V 95A TO247N Rohm Semiconductor	260 In Stock This product has a maximum purchase limit	1 : $52.35000 Tube	-	Tube	Active	N-Channel	SiCFET (Silicon Carbide)	1200 V	95A (Tc)	18V	28.6mOhm @ 36A, 18V	5.6V @ 18.2mA	178 nC @ 10 V	+22V, -4V	2879 pF @ 800 V	-	427W	175°C (TJ)	Through Hole	TO-247N	TO-247-3
SCT3030KLGC11 SICFET N-CH 1200V 72A TO247N Rohm Semiconductor	749 In Stock This product has a maximum purchase limit	1 : $81.08000 Tube	-	Tube	Active	N-Channel	SiCFET (Silicon Carbide)	1200 V	72A (Tc)	18V	39mOhm @ 27A, 18V	5.6V @ 13.3mA	131 nC @ 18 V	+22V, -4V	2222 pF @ 800 V	-	339W (Tc)	175°C (TJ)	Through Hole	TO-247N	TO-247-3
G3R350MT12D SIC MOSFET N-CH 11A TO247-3 GeneSiC Semiconductor	3,169 In Stock	1 : $4.74000 Tube	G3R™	Tube	Active	N-Channel	SiCFET (Silicon Carbide)	1200 V	11A (Tc)	15V	420mOhm @ 4A, 15V	2.69V @ 2mA	12 nC @ 15 V	±15V	334 pF @ 800 V	-	74W (Tc)	-55°C ~ 175°C (TJ)	Through Hole	TO-247-3	TO-247-3
IXTA3N120-TRL MOSFET N-CH 1200V 3A TO263 IXYS	2,870 In Stock	1 : $8.45000 Cut Tape (CT) 800 : $5.50079 Tape & Reel (TR)	-	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Active	N-Channel	MOSFET (Metal Oxide)	1200 V	3A (Tc)	10V	4.5Ohm @ 1.5A, 10V	5V @ 250µA	42 nC @ 10 V	±20V	1350 pF @ 25 V	-	200W (Tc)	-55°C ~ 150°C (TJ)	Surface Mount	TO-263AA	TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
G3R160MT12J SIC MOSFET N-CH 19A TO263-7 GeneSiC Semiconductor	356 In Stock	1 : $7.26000 Tube	G3R™	Tube	Active	N-Channel	SiCFET (Silicon Carbide)	1200 V	19A (Tc)	15V	208mOhm @ 10A, 15V	2.7V @ 5mA (Typ)	23 nC @ 15 V	+20V, -10V	724 pF @ 800 V	-	128W (Tc)	-55°C ~ 175°C (TJ)	Surface Mount	TO-263-7	TO-263-8, D²Pak (7 Leads + Tab), TO-263CA
G3R75MT12D SIC MOSFET N-CH 41A TO247-3 GeneSiC Semiconductor	3,343 In Stock	1 : $10.50000 Tube	G3R™	Tube	Active	N-Channel	SiCFET (Silicon Carbide)	1200 V	41A (Tc)	15V	90mOhm @ 20A, 15V	2.69V @ 7.5mA	54 nC @ 15 V	±15V	1560 pF @ 800 V	-	207W (Tc)	-55°C ~ 175°C (TJ)	Through Hole	TO-247-3	TO-247-3
IXFA6N120P MOSFET N-CH 1200V 6A TO263 IXYS	2,100 In Stock	1 : $10.63000 Tube	HiPerFET™, Polar	Tube	Active	N-Channel	MOSFET (Metal Oxide)	1200 V	6A (Tc)	10V	2.4Ohm @ 500mA, 10V	5V @ 1mA	92 nC @ 10 V	±30V	2830 pF @ 25 V	-	250W (Tc)	-55°C ~ 150°C (TJ)	Surface Mount	TO-263AA (IXFA)	TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
G3R75MT12K SIC MOSFET N-CH 41A TO247-4 GeneSiC Semiconductor	1,417 In Stock	1 : $10.77000 Tube	G3R™	Tube	Active	N-Channel	SiCFET (Silicon Carbide)	1200 V	41A (Tc)	15V	90mOhm @ 20A, 15V	2.69V @ 7.5mA	54 nC @ 15 V	±15V	1560 pF @ 800 V	-	207W (Tc)	-55°C ~ 175°C (TJ)	Through Hole	TO-247-4	TO-247-4
G3R75MT12J SIC MOSFET N-CH 42A TO263-7 GeneSiC Semiconductor	0 In Stock Check Lead Time	1 : $11.03000 Tube	G3R™	Tube	Active	N-Channel	SiCFET (Silicon Carbide)	1200 V	42A (Tc)	15V	90mOhm @ 20A, 15V	2.69V @ 7.5mA	54 nC @ 15 V	±15V	1560 pF @ 800 V	-	224W (Tc)	-55°C ~ 175°C (TJ)	Surface Mount	TO-263-7	TO-263-8, D²Pak (7 Leads + Tab), TO-263CA
GP2T080A120U SIC MOSFET 1200V 80M TO-247-3L SemiQ	414 In Stock This product has a maximum purchase limit	1 : $11.87000 Tube	-	Tube	Active	N-Channel	SiCFET (Silicon Carbide)	1200 V	35A (Tc)	20V	100mOhm @ 20A, 20V	4V @ 10mA	58 nC @ 20 V	+25V, -10V	1377 pF @ 1000 V	-	188W (Tc)	-55°C ~ 175°C (TJ)	Through Hole	TO-247-3	TO-247-3
UF3C120080K3S SICFET N-CH 1200V 33A TO247-3 Qorvo	18,226 In Stock	1 : $15.19000 Tube	-	Tube	Active	N-Channel	SiCFET (Cascode SiCJFET)	1200 V	33A (Tc)	12V	100mOhm @ 20A, 12V	6V @ 10mA	51 nC @ 15 V	±25V	1500 pF @ 100 V	-	254.2W (Tc)	-55°C ~ 175°C (TJ)	Through Hole	TO-247-3	TO-247-3
UJ3C120080K3S SICFET N-CH 1200V 33A TO247-3 Qorvo	6,427 In Stock	1 : $15.21000 Tube	-	Tube	Active	N-Channel	SiCFET (Cascode SiCJFET)	1200 V	33A (Tc)	12V	100mOhm @ 20A, 12V	6V @ 10mA	51 nC @ 15 V	±25V	1500 pF @ 100 V	-	254.2W (Tc)	-55°C ~ 175°C (TJ)	Through Hole	TO-247-3	TO-247-3
IMZ120R060M1HXKSA1 SICFET N-CH 1.2KV 36A TO247-4 Infineon Technologies	246 In Stock	1 : $16.45000 Tube	CoolSiC™	Tube	Active	N-Channel	SiCFET (Silicon Carbide)	1200 V	36A (Tc)	15V, 18V	78mOhm @ 13A, 18V	5.7V @ 5.6mA	31 nC @ 18 V	+23V, -7V	1060 pF @ 800 V	-	150W (Tc)	-55°C ~ 175°C (TJ)	Through Hole	PG-TO247-4-1	TO-247-4
UF3SC120040B7S 1200V/40MOHM, SIC, STACKED FAST Qorvo	1,637 In Stock	1 : $25.61000 Cut Tape (CT) 800 : $18.31536 Tape & Reel (TR)	-	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Active	N-Channel	SiCFET (Cascode SiCJFET)	1200 V	47A (Tc)	12V	45mOhm @ 35A, 12V	6V @ 10mA	43 nC @ 12 V	±25V	1500 pF @ 100 V	-	214W (Tc)	-55°C ~ 175°C (TJ)	Surface Mount	D2PAK-7	TO-263-8, D²Pak (7 Leads + Tab), TO-263CA
G3R30MT12K SIC MOSFET N-CH 90A TO247-4 GeneSiC Semiconductor	1,555 In Stock	1 : $22.53000 Tube	G3R™	Tube	Active	N-Channel	SiCFET (Silicon Carbide)	1200 V	90A (Tc)	15V	36mOhm @ 50A, 15V	2.69V @ 12mA	155 nC @ 15 V	±15V	3901 pF @ 800 V	-	400W (Tc)	-55°C ~ 175°C (TJ)	Through Hole	TO-247-4	TO-247-4
G3R30MT12J SIC MOSFET N-CH 96A TO263-7 GeneSiC Semiconductor	504 In Stock	1 : $22.83000 Tube	G3R™	Tube	Active	N-Channel	SiCFET (Silicon Carbide)	1200 V	96A (Tc)	15V	36mOhm @ 50A, 15V	2.69V @ 12mA	155 nC @ 15 V	±15V	3901 pF @ 800 V	-	459W (Tc)	-55°C ~ 175°C (TJ)	Surface Mount	TO-263-7	TO-263-8, D²Pak (7 Leads + Tab), TO-263CA
NTHL040N120SC1 SICFET N-CH 1200V 60A TO247-3 onsemi	750 In Stock	1 : $24.50000 Tube	-	Tube	Active	N-Channel	SiCFET (Silicon Carbide)	1200 V	60A (Tc)	20V	56mOhm @ 35A, 20V	4.3V @ 10mA	106 nC @ 20 V	+25V, -15V	1781 pF @ 800 V	-	348W (Tc)	-55°C ~ 175°C (TJ)	Through Hole	TO-247-3	TO-247-3
SCT3080KLHRC11 SICFET N-CH 1200V 31A TO247N Rohm Semiconductor	878 In Stock This product has a maximum purchase limit	1 : $26.67000 Tube	Automotive, AEC-Q101	Tube	Active	N-Channel	SiCFET (Silicon Carbide)	1200 V	31A (Tc)	18V	104mOhm @ 10A, 18V	5.6V @ 5mA	60 nC @ 18 V	+22V, -4V	785 pF @ 800 V	-	165W	175°C (TJ)	Through Hole	TO-247N	TO-247-3
UF3C120040K4S SICFET N-CH 1200V 65A TO247-4 Qorvo	709 In Stock	1 : $27.97000 Tube	-	Tube	Active	N-Channel	SiCFET (Cascode SiCJFET)	1200 V	65A (Tc)	12V	45mOhm @ 40A, 12V	6V @ 10mA	43 nC @ 12 V	±25V	1500 pF @ 100 V	-	429W (Tc)	-55°C ~ 175°C (TJ)	Through Hole	TO-247-4	TO-247-4
IMW120R020M1HXKSA1 SIC DISCRETE Infineon Technologies	298 In Stock	1 : $35.62000 Tube	CoolSiC™	Tube	Active	N-Channel	SiCFET (Silicon Carbide)	1200 V	98A (Tc)	15V, 18V	26.9mOhm @ 41A, 18V	5.2V @ 17.6mA	83 nC @ 18 V	+20V, -5V	3460 nF @ 25 V	-	375W (Tc)	-55°C ~ 175°C (TJ)	Through Hole	PG-TO247-3	TO-247-3
NVH4L020N120SC1 SICFET N-CH 1200V 102A TO247 onsemi	663 In Stock	1 : $52.51000 Tube	Automotive, AEC-Q101	Tube	Active	N-Channel	SiCFET (Silicon Carbide)	1200 V	102A (Tc)	20V	28mOhm @ 60A, 20V	4.3V @ 20mA	220 nC @ 20 V	+25V, -15V	2943 pF @ 800 V	-	510W (Tc)	-55°C ~ 175°C (TJ)	Through Hole	TO-247-4L	TO-247-4
UF3SC120016K4S SICFET N-CH 1200V 107A TO247-4 Qorvo	1,897 In Stock	1 : $53.69000 Tube	-	Tube	Active	N-Channel	SiCFET (Cascode SiCJFET)	1200 V	107A (Tc)	12V	21mOhm @ 50A, 12V	6V @ 10mA	218 nC @ 15 V	±20V	7824 pF @ 800 V	-	517W (Tc)	-55°C ~ 175°C (TJ)	Through Hole	TO-247-4	TO-247-4
SCT3040KLHRC11 SICFET N-CH 1200V 55A TO247N Rohm Semiconductor	886 In Stock This product has a maximum purchase limit	1 : $56.34000 Tube	Automotive, AEC-Q101	Tube	Active	N-Channel	SiCFET (Silicon Carbide)	1200 V	55A (Ta)	18V	52mOhm @ 20A, 18V	5.6V @ 10mA	107 nC @ 18 V	+22V, -4V	1337 pF @ 800 V	-	262W	175°C (TJ)	Through Hole	TO-247N	TO-247-3

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Discrete Field Effect Transistors (FETs) are widely used in power conversion, motor control, solid-state lighting, and other applications where their characteristic ability to be switched on & off at high frequencies while carrying substantial amounts of current is advantageous. They are used almost universally for applications requiring voltage ratings of a few hundred volts or less, above which other device types such as IGBTs become more competitive.

1200 V Single FETs, MOSFETs

1200 V Single FETs, MOSFETs

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