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Mfr Part #
Quantity Available
Price
Series
Package
Product Status
FET Type
Technology
Drain to Source Voltage (Vdss)
Current - Continuous Drain (Id) @ 25°C
Drive Voltage (Max Rds On, Min Rds On)
Rds On (Max) @ Id, Vgs
Vgs(th) (Max) @ Id
Gate Charge (Qg) (Max) @ Vgs
Vgs (Max)
Input Capacitance (Ciss) (Max) @ Vds
FET Feature
Power Dissipation (Max)
Operating Temperature
Mounting Type
Supplier Device Package
Package / Case
SCT3040KRC14
SCT3030ARC14
SICFET N-CH 650V 70A TO247-4L
Rohm Semiconductor
425
In Stock
1 : $53.55000
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ActiveN-ChannelSiCFET (Silicon Carbide)650 V70A (Tc)18V39mOhm @ 27A, 18V5.6V @ 13.3mA104 nC @ 18 V+22V, -4V1526 pF @ 500 V-262W175°C (TJ)Through HoleTO-247-4LTO-247-4
SCT3105KRC14-front
SCT3040KRC14
SICFET N-CH 1200V 55A TO247-4L
Rohm Semiconductor
212
In Stock
1 : $56.59000
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ActiveN-ChannelSiCFET (Silicon Carbide)1200 V55A (Tc)18V52mOhm @ 20A, 18V5.6V @ 10mA107 nC @ 18 V+22V, -4V1337 pF @ 800 V-262W175°C (TJ)Through HoleTO-247-4LTO-247-4
UJ4SC075006K4S
UJ4C075060K4S
SICFET N-CH 750V 28A TO247-4
UnitedSiC
2,828
In Stock
1 : $10.59000
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ActiveN-ChannelSiCFET (Cascode SiCJFET)750 V28A (Tc)-74mOhm @ 20A, 12V6V @ 10mA37.8 nC @ 15 V±20V1422 pF @ 100 V-155W (Tc)-55°C ~ 175°C (TJ)Through HoleTO-247-4TO-247-4
TO-247-4 Top
G3R75MT12K
SIC MOSFET N-CH 41A TO247-4
GeneSiC Semiconductor
925
In Stock
1 : $11.42000
Tube
Tube
ActiveN-ChannelSiCFET (Silicon Carbide)1200 V41A (Tc)15V90mOhm @ 20A, 15V2.69V @ 7.5mA54 nC @ 15 V±15V1560 pF @ 800 V-207W (Tc)-55°C ~ 175°C (TJ)Through HoleTO-247-4TO-247-4
TO-247-4L
UF3C065040K4S
MOSFET N-CH 650V 54A TO247-4
UnitedSiC
2,650
In Stock
1 : $14.22000
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ActiveN-Channel-650 V54A (Tc)12V52mOhm @ 40A, 12V6V @ 10mA43 nC @ 12 V±25V1500 pF @ 100 V-326W (Tc)-55°C ~ 175°C (TJ)Through HoleTO-247-4TO-247-4
TO-247-4 Top
G3R40MT12K
SIC MOSFET N-CH 71A TO247-4
GeneSiC Semiconductor
401
In Stock
1 : $18.73000
Tube
Tube
ActiveN-ChannelSiCFET (Silicon Carbide)1200 V71A (Tc)15V48mOhm @ 35A, 15V2.69V @ 10mA106 nC @ 15 V±15V2929 pF @ 800 V-333W (Tc)-55°C ~ 175°C (TJ)Through HoleTO-247-4TO-247-4
UJ4SC075006K4S
UJ4C075018K4S
SICFET N-CH 750V 81A TO247-4
UnitedSiC
1,732
In Stock
1 : $19.59000
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ActiveN-ChannelSiCFET (Cascode SiCJFET)750 V81A (Tc)-23mOhm @ 20A, 12V6V @ 10mA37.8 nC @ 15 V±20V1422 pF @ 100 V-385W (Tc)-55°C ~ 175°C (TJ)Through HoleTO-247-4TO-247-4
TO-247-4L
UF3C065030K4S
MOSFET N-CH 650V 85A TO247-4
UnitedSiC
1,988
In Stock
1 : $20.16000
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ActiveN-Channel-650 V85A (Tc)12V35mOhm @ 50A, 12V6V @ 10mA43 nC @ 12 V±25V1500 pF @ 100 V-441W (Tc)-55°C ~ 175°C (TJ)Through HoleTO-247-4TO-247-4
TO-247-4 Top
G3R30MT12K
SIC MOSFET N-CH 90A TO247-4
GeneSiC Semiconductor
2,783
In Stock
1 : $23.88000
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Tube
ActiveN-ChannelSiCFET (Silicon Carbide)1200 V90A (Tc)15V36mOhm @ 50A, 15V2.69V @ 12mA155 nC @ 15 V±15V3901 pF @ 800 V-400W (Tc)-55°C ~ 175°C (TJ)Through HoleTO-247-4TO-247-4
SCT3105KRC14-front
SCT3060ARC14
SICFET N-CH 650V 39A TO247-4L
Rohm Semiconductor
133
In Stock
1 : $25.42000
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ActiveN-ChannelSiCFET (Silicon Carbide)650 V39A (Tc)18V78mOhm @ 13A, 18V5.6V @ 6.67mA58 nC @ 18 V+22V, -4V852 pF @ 500 V-165W175°C (TJ)Through HoleTO-247-4LTO-247-4
TO-247-4L
UF3C120040K4S
SICFET N-CH 1200V 65A TO247-4
UnitedSiC
918
In Stock
1 : $29.30000
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ActiveN-ChannelSiCFET (Cascode SiCJFET)1200 V65A (Tc)12V45mOhm @ 40A, 12V6V @ 10mA43 nC @ 12 V±25V1500 pF @ 100 V-429W (Tc)-55°C ~ 175°C (TJ)Through HoleTO-247-4TO-247-4
TO-247-4 Top
G3R45MT17K
SIC MOSFET N-CH 61A TO247-4
GeneSiC Semiconductor
815
In Stock
1 : $35.06000
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Tube
ActiveN-ChannelSiCFET (Silicon Carbide)1700 V61A (Tc)15V58mOhm @ 40A, 15V2.7V @ 8mA182 nC @ 15 V±15V4523 pF @ 1000 V-438W (Tc)-55°C ~ 175°C (TJ)Through HoleTO-247-4TO-247-4
NTH4L022N120M3S
NTH4L022N120M3S
SIC MOS TO247-4L 22MOHM 1200V
onsemi
184
In Stock
1 : $36.15000
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ActiveN-ChannelSiCFET (Silicon Carbide)1200 V68A (Tc)18V30mOhm @ 40A, 18V4.4V @ 20mA151 nC @ 18 V+22V, -10V3175 pF @ 800 V-352W (Tc)-55°C ~ 175°C (TJ)Through HoleTO-247-4LTO-247-4
TO-247-4 Top
G3R20MT12K
SIC MOSFET N-CH 128A TO247-4
GeneSiC Semiconductor
689
In Stock
1 : $38.25000
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Tube
ActiveN-ChannelSiCFET (Silicon Carbide)1200 V128A (Tc)15V24mOhm @ 60A, 15V2.69V @ 15mA219 nC @ 15 V±15V5873 pF @ 800 V-542W (Tc)-55°C ~ 175°C (TJ)Through HoleTO-247-4TO-247-4
UJ4SC075006K4S
UJ4SC075009K4S
750V/9MOHM, SIC, STACKED CASCODE
UnitedSiC
190
In Stock
1 : $39.32000
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ActiveN-ChannelSiCFET (Silicon Carbide)750 V106A (Tc)12V11.5mOhm @ 70A, 12V5.5V @ 10mA75 nC @ 15 V±20V3340 pF @ 400 V-375W (Tc)-55°C ~ 175°C (TJ)Through HoleTO-247-4TO-247-4
TO-247-4L
UF3SC120016K4S
SICFET N-CH 1200V 107A TO247-4
UnitedSiC
2,390
In Stock
1 : $56.25000
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ActiveN-ChannelSiCFET (Cascode SiCJFET)1200 V107A (Tc)12V21mOhm @ 50A, 12V6V @ 10mA218 nC @ 15 V±20V7824 pF @ 800 V-517W (Tc)-55°C ~ 175°C (TJ)Through HoleTO-247-4TO-247-4
TO-247-4L
UF3SC065007K4S
MOSFET N-CH 650V 120A TO247-4
UnitedSiC
498
In Stock
1 : $78.82000
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ActiveN-Channel-650 V120A (Tc)12V9mOhm @ 50A, 12V6V @ 10mA214 nC @ 15 V±20V--789W (Tc)-55°C ~ 175°C (TJ)Through HoleTO-247-4TO-247-4
TO-247-4 Top
G3R20MT17K
SIC MOSFET N-CH 124A TO247-4
GeneSiC Semiconductor
273
In Stock
1 : $113.64000
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Tube
ActiveN-ChannelSiCFET (Silicon Carbide)1700 V124A (Tc)15V26mOhm @ 75A, 15V2.7V @ 15mA400 nC @ 15 V±15V10187 pF @ 1000 V-809W (Tc)-55°C ~ 175°C (TJ)Through HoleTO-247-4TO-247-4
TO-247-4 Top
G3R60MT07K
750V 60M TO-247-4 G3R SIC MOSFET
GeneSiC Semiconductor
135
In Stock
1 : $11.02000
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Tube
Active-SiCFET (Silicon Carbide)750 V----------Through HoleTO-247-4TO-247-4
UJ4SC075006K4S
UJ4C075033K4S
750V/33MOHM, SIC, CASCODE, G4, T
UnitedSiC
526
In Stock
1 : $11.84000
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ActiveN-ChannelSiCFET (Silicon Carbide)750 V47A (Tc)12V41mOhm @ 30A, 12V6V @ 10mA37.8 nC @ 15 V±20V1400 pF @ 400 V-242W (Tc)-55°C ~ 175°C (TJ)Through HoleTO-247-4TO-247-4
C3M0120100K
C3M0120100K
SICFET N-CH 1000V 22A TO247-4L
Wolfspeed, Inc.
2,957
In Stock
1 : $13.78000
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Tube
ActiveN-ChannelSiCFET (Silicon Carbide)1000 V22A (Tc)15V155mOhm @ 15A, 15V3.5V @ 3mA21.5 nC @ 15 V±15V350 pF @ 600 V-83W (Tc)-55°C ~ 150°C (TJ)Through HoleTO-247-4LTO-247-4
NVH4L080N120SC1
NTH4L080N120SC1
SICFET N-CH 1200V 29A TO247-4
onsemi
227
In Stock
1 : $14.45000
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ActiveN-ChannelSiCFET (Silicon Carbide)1200 V29A (Tc)20V110mOhm @ 20A, 20V4.3V @ 5mA56 nC @ 20 V+25V, -15V1670 pF @ 800 V-170W (Tc)-55°C ~ 175°C (TJ)Through HoleTO-247-4LTO-247-4
MOSFETTO247
IMZ120R090M1HXKSA1
SICFET N-CH 1.2KV 26A TO247-4
Infineon Technologies
355
In Stock
1 : $15.13000
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Tube
ActiveN-ChannelSiCFET (Silicon Carbide)1200 V26A (Tc)15V, 18V117mOhm @ 8.5A, 18V5.7V @ 3.7mA21 nC @ 18 V+23V, -7V707 pF @ 800 V-115W (Tc)-55°C ~ 175°C (TJ)Through HolePG-TO247-4-1TO-247-4
TO-247-4L
UF3C120080K4S
SICFET N-CH 1200V 33A TO247-4
UnitedSiC
1,292
In Stock
1 : $15.94000
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ActiveN-ChannelSiCFET (Cascode SiCJFET)1200 V33A (Tc)12V100mOhm @ 20A, 12V6V @ 10mA43 nC @ 12 V±25V1500 pF @ 100 V-254.2W (Tc)-55°C ~ 175°C (TJ)Through HoleTO-247-4TO-247-4
SILICON CARBIDE MOSFET, NCHANNEL
NTH4L045N065SC1
SILICON CARBIDE MOSFET, NCHANNEL
onsemi
192
In Stock
1 : $16.52000
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ActiveN-ChannelSiCFET (Silicon Carbide)650 V55A (Tc)15V, 18V50mOhm @ 25A, 18V4.3V @ 8mA105 nC @ 18 V+22V, -8V1870 pF @ 325 V-187W (Tc)-55°C ~ 175°C (TJ)Through HoleTO-247-4LTO-247-4
Showing
1 - 25
of 193

TO-247-4 Transistors - FETs, MOSFETs - Single


Discrete Field Effect Transistors (FETs) are widely used in power conversion, motor control, solid-state lighting, and other applications where their characteristic ability to be switched on & off at high frequencies while carrying substantial amounts of current is advantageous. They are used almost universally for applications requiring voltage ratings of a few hundred volts or less, above which other device types such as IGBTs become more competitive.