EPC Space, LLC Single FETs, MOSFETs

Results: 20
Series
-e-GaN®eGaN®FSMD-B
Packaging
BulkTray
FET Type
N-ChannelP-Channel
Technology
GaNFET (Gallium Nitride)MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
40 V60 V100 V200 V300 V
Current - Continuous Drain (Id) @ 25°C
1A (Tc)4A (Tc)5A (Tc)8A (Tc)18A (Tc)30A (Tc)80A (Tc)
Rds On (Max) @ Id, Vgs
4mOhm @ 50A, 5V6mOhm @ 40A, 5V9mOhm @ 30A, 5V12mOhm @ 30A, 5V13mOhm @ 30A, 5V14.5mOhm @ 30A, 5V24mOhm @ 8A, 5V26mOhm @ 18A, 5V28mOhm @ 18A, 5V44mOhm @ 5A, 5V45mOhm @ 5A, 5V130mOhm @ 4A, 5V404mOhm @ 4A, 5V580mOhm @ 1A, 5V
Vgs(th) (Max) @ Id
2.5V @ 1.2mA2.5V @ 12mA2.5V @ 140µA2.5V @ 18mA2.5V @ 2mA2.5V @ 3mA2.5V @ 5mA2.5V @ 7mA2.5V @ 9mA2.8V @ 1mA2.8V @ 600µA
Gate Charge (Qg) (Max) @ Vgs
2.2 nC @ 5 V2.6 nC @ 5 V2.8 nC @ 5 V3 nC @ 5 V5.4 nC @ 5 V6 nC @ 5 V7 nC @ 5 V11 nC @ 5 V11.4 nC @ 5 V11.7 nC @ 5 V
Vgs (Max)
+6V, -4V+7V, -4V-
Input Capacitance (Ciss) (Max) @ Vds
22 pF @ 30 V150 pF @ 100 V233 pF @ 50 V312 pF @ 20 V450 pF @ 150 V525 pF @ 100 V797 pF @ 50 V900 pF @ 100 V1000 pF @ 50 V1240 pF @ 50 V1300 pF @ 20 V1313 pF @ 100 V2830 pF @ 20 V
Supplier Device Package
4-SMD5-SMD
Package / Case
4-SMD, No Lead5-SMD, No Lead
Stocking Options
Environmental Options
Media
Marketplace Product
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Quantity Available
Price
Series
Package
Product Status
FET Type
Technology
Drain to Source Voltage (Vdss)
Current - Continuous Drain (Id) @ 25°C
Drive Voltage (Max Rds On, Min Rds On)
Rds On (Max) @ Id, Vgs
Vgs(th) (Max) @ Id
Gate Charge (Qg) (Max) @ Vgs
Vgs (Max)
Input Capacitance (Ciss) (Max) @ Vds
FET Feature
Power Dissipation (Max)
Operating Temperature
Mounting Type
Supplier Device Package
Package / Case
FBG20N18BC
FBG20N18BC
GAN FET HEMT200V18A COTS 4FSMD-B
EPC Space, LLC
178
In Stock
Active
-
-
ActiveN-ChannelGaNFET (Gallium Nitride)200 V18A (Tc)5V26mOhm @ 18A, 5V2.5V @ 3mA6 nC @ 5 V+6V, -4V900 pF @ 100 V---55°C ~ 150°C (TJ)Surface Mount4-SMD4-SMD, No Lead
FBG04N08AC (primary)
FBG04N08AC
GAN FET HEMT 40V 8A 4FSMD-A
EPC Space, LLC
100
In Stock
Active
-
-
ActiveN-ChannelGaNFET (Gallium Nitride)40 V8A (Tc)5V24mOhm @ 8A, 5V2.5V @ 2mA2.8 nC @ 5 V+6V, -4V312 pF @ 20 V---55°C ~ 150°C (TJ)Surface Mount4-SMD4-SMD, No Lead
FBG04N30BC
FBG04N30BC
GAN FET HEMT 40V30A COTS 4FSMD-B
EPC Space, LLC
54
In Stock
Active
-
ActiveN-ChannelGaNFET (Gallium Nitride)40 V30A (Tc)5V9mOhm @ 30A, 5V2.5V @ 9mA11.4 nC @ 5 V+6V, -4V1300 pF @ 20 V---55°C ~ 150°C (TJ)Surface Mount4-SMD4-SMD, No Lead
FBG10N05AC (primary)
FBG10N05AC
GAN FET HEMT 100V5A COTS 4FSMD-A
EPC Space, LLC
27
In Stock
Active
-
-
ActiveN-ChannelGaNFET (Gallium Nitride)100 V5A (Tc)5V44mOhm @ 5A, 5V2.5V @ 1.2mA2.2 nC @ 5 V+6V, -4V233 pF @ 50 V---55°C ~ 150°C (TJ)Surface Mount4-SMD4-SMD, No Lead
EPC7014UBC (primary)
EPC7014UBC
GAN FET HEMT 60V 1A COTS 4UB
EPC Space, LLC
52
In Stock
Active
-
ActiveN-ChannelGaNFET (Gallium Nitride)60 V1A (Tc)5V580mOhm @ 1A, 5V2.5V @ 140µA-+7V, -4V22 pF @ 30 V---55°C ~ 150°C (TJ)Surface Mount4-SMD4-SMD, No Lead
GAN FET HEMT 100V 5A COTS 4UB
EPC7003AC
GAN FET HEMT 100V 5A COTS 4UB
EPC Space, LLC
150
In Stock
1 : $329.35000
Bulk
-
Bulk
Active----------------
EPC7020GC
EPC7019GC
GAN FET HEMT 40V 95A COTS 5UB
EPC Space, LLC
150
In Stock
1 : $329.35000
Bulk
Bulk
ActiveN-ChannelGaNFET (Gallium Nitride)40 V80A (Tc)5V4mOhm @ 50A, 5V2.5V @ 18mA-+6V, -4V2830 pF @ 20 V---55°C ~ 150°C (TJ)Surface Mount5-SMD5-SMD, No Lead
EPC7020GC
EPC7020GC
GAN FET HEMT 200V 80A COTS 5UB
EPC Space, LLC
150
In Stock
1 : $329.35000
Bulk
Bulk
ActiveN-ChannelGaNFET (Gallium Nitride)200 V80A (Tc)5V14.5mOhm @ 30A, 5V2.5V @ 7mA-+6V, -4V1313 pF @ 100 V---55°C ~ 150°C (TJ)Surface Mount5-SMD5-SMD, No Lead
GAN FET HEMT200V18A COTS 4FSMD-B
EPC7007BC
GAN FET HEMT200V18A COTS 4FSMD-B
EPC Space, LLC
150
In Stock
1 : $329.35000
Bulk
Bulk
ActiveP-ChannelMOSFET (Metal Oxide)200 V18A (Tc)5V28mOhm @ 18A, 5V2.5V @ 3mA5.4 nC @ 5 V+6V, -4V525 pF @ 100 V---55°C ~ 150°C (TJ)Surface Mount4-SMD4-SMD, No Lead
EPC7020GC
EPC7018GC
GAN FET HEMT 100V 90A COTS 5UB
EPC Space, LLC
148
In Stock
1 : $329.35000
Bulk
Bulk
ActiveN-ChannelGaNFET (Gallium Nitride)100 V80A (Tc)5V6mOhm @ 40A, 5V2.5V @ 12mA11.7 nC @ 5 V+6V, -4V1240 pF @ 50 V---55°C ~ 150°C (TJ)Surface Mount5-SMD5-SMD, No Lead
FBG30N04CC (primary)
FBG30N04CC
GAN FET HEMT 300V4A COTS 4FSMD-C
EPC Space, LLC
99
In Stock
Active
-
-
ActiveN-ChannelGaNFET (Gallium Nitride)300 V4A (Tc)5V404mOhm @ 4A, 5V2.8V @ 600µA2.6 nC @ 5 V+6V, -4V450 pF @ 150 V---55°C ~ 150°C (TJ)Surface Mount4-SMD4-SMD, No Lead
GAN FET HEMT 100V 5A 4FSMD-A
FBG10N05ASH
GAN FET HEMT 100V 5A 4FSMD-A
EPC Space, LLC
25
In Stock
Active
-
ActiveN-ChannelGaNFET (Gallium Nitride)100 V5A (Tc)5V45mOhm @ 5A, 5V2.5V @ 1.2mA2.2 nC @ 5 V+6V, -4V233 pF @ 50 V---55°C ~ 150°C (TJ)Surface Mount4-SMD4-SMD, No Lead
FBG10N30BC (primary)
FBG10N30BC
GAN FET HEMT100V30A COTS 4FSMD-B
EPC Space, LLC
3
In Stock
Active
-
-
ActiveN-ChannelGaNFET (Gallium Nitride)100 V30A (Tc)5V9mOhm @ 30A, 5V2.5V @ 5mA11 nC @ 5 V+6V, -4V1000 pF @ 50 V---55°C ~ 150°C (TJ)Surface Mount4-SMD4-SMD, No Lead
GAN FET HEMT 60V 1A 4UB
EPC7014UBSH
GAN FET HEMT 60V 1A 4UB
EPC Space, LLC
0
In Stock
Check Lead Time
Active
-
ActiveN-ChannelGaNFET (Gallium Nitride)60 V1A (Tc)5V580mOhm @ 1A, 5V2.5V @ 140µA--22 pF @ 30 V---55°C ~ 150°C (TJ)Surface Mount4-SMD4-SMD, No Lead
GAN FET HEMT100V30A COTS 4FSMD-B
EPC7004BC
GAN FET HEMT100V30A COTS 4FSMD-B
EPC Space, LLC
0
In Stock
Check Lead Time
1 : $329.35000
Tray
-
Tray
ActiveN-ChannelGaNFET (Gallium Nitride)100 V30A (Tc)5V13mOhm @ 30A, 5V2.5V @ 7mA7 nC @ 5 V+6V, -4V797 pF @ 50 V---55°C ~ 150°C (TJ)Surface Mount4-SMD4-SMD, No Lead
GAN FET HEMT 40V 8A 4FSMD-A
FBG04N08ASH
GAN FET HEMT 40V 8A 4FSMD-A
EPC Space, LLC
0
In Stock
Check Lead Time
Active
-
ActiveN-ChannelGaNFET (Gallium Nitride)40 V8A (Tc)5V24mOhm @ 8A, 5V2.5V @ 2mA2.8 nC @ 5 V+6V, -4V312 pF @ 20 V---55°C ~ 150°C (TJ)Surface Mount4-SMD4-SMD, No Lead
GAN FET HEMT 200V 4A 4FSMD-A
FBG20N04ASH
GAN FET HEMT 200V 4A 4FSMD-A
EPC Space, LLC
0
In Stock
Check Lead Time
Active
-
ActiveN-ChannelGaNFET (Gallium Nitride)200 V4A (Tc)5V130mOhm @ 4A, 5V2.8V @ 1mA3 nC @ 5 V+6V, -4V150 pF @ 100 V---55°C ~ 150°C (TJ)Surface Mount4-SMD4-SMD, No Lead
GAN FET HEMT 200V 18A 4FSMD-B
FBG20N18BSH
GAN FET HEMT 200V 18A 4FSMD-B
EPC Space, LLC
0
In Stock
Check Lead Time
Active
-
ActiveN-ChannelGaNFET (Gallium Nitride)200 V18A (Tc)5V28mOhm @ 18A, 5V2.5V @ 3mA7 nC @ 5 V+6V, -4V900 pF @ 100 V---55°C ~ 150°C (TJ)Surface Mount4-SMD4-SMD, No Lead
GAN FET HEMT 40V 30A 4FSMD-B
FBG04N30BSH
GAN FET HEMT 40V 30A 4FSMD-B
EPC Space, LLC
0
In Stock
Check Lead Time
Active
-
ActiveN-ChannelGaNFET (Gallium Nitride)40 V30A (Tc)5V9mOhm @ 30A, 5V2.5V @ 9mA11.4 nC @ 5 V+6V, -4V1300 pF @ 20 V---55°C ~ 150°C (TJ)Surface Mount4-SMD4-SMD, No Lead
GAN FET HEMT 100V 30A 4FSMD-B
FBG10N30BSH
GAN FET HEMT 100V 30A 4FSMD-B
EPC Space, LLC
0
In Stock
Check Lead Time
Active
-
ActiveN-ChannelGaNFET (Gallium Nitride)100 V30A (Tc)5V12mOhm @ 30A, 5V2.5V @ 5mA11 nC @ 5 V+6V, -4V1000 pF @ 50 V---55°C ~ 150°C (TJ)Surface Mount4-SMD4-SMD, No Lead
Showing
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EPC Space, LLC Single FETs, MOSFETs

Discrete Field Effect Transistors (FETs) are widely used in power conversion, motor control, solid-state lighting, and other applications where their characteristic ability to be switched on & off at high frequencies while carrying substantial amounts of current is advantageous. They are used almost universally for applications requiring voltage ratings of a few hundred volts or less, above which other device types such as IGBTs become more competitive.