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Mfr Part #
Quantity Available
Price
Series
Package
Product Status
FET Type
Technology
Drain to Source Voltage (Vdss)
Current - Continuous Drain (Id) @ 25°C
Drive Voltage (Max Rds On, Min Rds On)
Rds On (Max) @ Id, Vgs
Vgs(th) (Max) @ Id
Gate Charge (Qg) (Max) @ Vgs
Vgs (Max)
Input Capacitance (Ciss) (Max) @ Vds
FET Feature
Power Dissipation (Max)
Operating Temperature
Mounting Type
Supplier Device Package
Package / Case
TO-220AB
IRF520PBF-BE3
MOSFET N-CH 100V 9.2A TO220AB
Vishay Siliconix
4,967
In Stock
1 : $1.29000
Tube
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Tube
ActiveN-ChannelMOSFET (Metal Oxide)100 V9.2A (Tc)10V270mOhm @ 5.5A, 10V4V @ 250µA16 nC @ 10 V±20V360 pF @ 25 V-60W (Tc)-55°C ~ 175°C (TJ)Through HoleTO-220ABTO-220-3
TO-220AB
IRF520PBF
MOSFET N-CH 100V 9.2A TO220AB
Vishay Siliconix
3,365
In Stock
1 : $1.29000
Tube
-
Tube
ActiveN-ChannelMOSFET (Metal Oxide)100 V9.2A (Tc)10V270mOhm @ 5.5A, 10V4V @ 250µA16 nC @ 10 V±20V360 pF @ 25 V-60W (Tc)-55°C ~ 175°C (TJ)Through HoleTO-220ABTO-220-3
TO-220AB
IRL520PBF
MOSFET N-CH 100V 9.2A TO220AB
Vishay Siliconix
9,045
In Stock
1 : $1.60000
Tube
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Tube
ActiveN-ChannelMOSFET (Metal Oxide)100 V9.2A (Tc)4V, 5V270mOhm @ 5.5A, 5V2V @ 250µA12 nC @ 5 V±10V490 pF @ 25 V-60W (Tc)-55°C ~ 175°C (TJ)Through HoleTO-220ABTO-220-3
TO-263AB
IRFS9N60APBF
MOSFET N-CH 600V 9.2A D2PAK
Vishay Siliconix
380
In Stock
1 : $3.84000
Tube
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Tube
ActiveN-ChannelMOSFET (Metal Oxide)600 V9.2A (Tc)10V750mOhm @ 5.5A, 10V4V @ 250µA49 nC @ 10 V±30V1400 pF @ 25 V-170W (Tc)-55°C ~ 150°C (TJ)Surface MountD²PAK (TO-263)TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
TO-220AB
IRL520PBF-BE3
MOSFET N-CH 100V 9.2A TO220AB
Vishay Siliconix
1,249
In Stock
1 : $1.60000
Tube
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Tube
ActiveN-ChannelMOSFET (Metal Oxide)100 V9.2A (Tc)-270mOhm @ 5.5A, 5V2V @ 250µA12 nC @ 5 V±10V490 pF @ 25 V-60W (Tc)-55°C ~ 175°C (TJ)Through HoleTO-220ABTO-220-3
TO-263AB
IRFS9N60ATRRPBF
MOSFET N-CH 600V 9.2A D2PAK
Vishay Siliconix
1,580
In Stock
1 : $3.96000
Cut Tape (CT)
800 : $2.47979
Tape & Reel (TR)
-
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
ActiveN-ChannelMOSFET (Metal Oxide)600 V9.2A (Tc)10V750mOhm @ 5.5A, 10V4V @ 250µA49 nC @ 10 V±30V1400 pF @ 25 V-170W (Tc)-55°C ~ 150°C (TJ)Surface MountD²PAK (TO-263)TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
IRF840ALPBF
IRFSL9N60APBF
MOSFET N-CH 600V 9.2A I2PAK
Vishay Siliconix
437
In Stock
1 : $3.13000
Tube
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Tube
ActiveN-ChannelMOSFET (Metal Oxide)600 V9.2A (Tc)10V750mOhm @ 5.5A, 10V4V @ 250µA49 nC @ 10 V±30V1400 pF @ 25 V-170W (Tc)-55°C ~ 150°C (TJ)Through HoleI2PAKTO-262-3 Long Leads, I²Pak, TO-262AA
TO-220AB
IRFB9N60APBF
MOSFET N-CH 600V 9.2A TO220AB
Vishay Siliconix
2,449
In Stock
1 : $3.37000
Tube
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Tube
ActiveN-ChannelMOSFET (Metal Oxide)600 V9.2A (Tc)10V750mOhm @ 5.5A, 10V4V @ 250µA49 nC @ 10 V±30V1400 pF @ 25 V-170W (Tc)-55°C ~ 150°C (TJ)Through HoleTO-220ABTO-220-3
TO-220AB
IRFB9N60APBF-BE3
MOSFET N-CH 600V 9.2A TO220AB
Vishay Siliconix
1,029
In Stock
1 : $3.37000
Tube
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Tube
ActiveN-ChannelMOSFET (Metal Oxide)600 V9.2A (Tc)-750mOhm @ 5.5A, 10V4V @ 250µA49 nC @ 10 V±30V1400 pF @ 25 V-170W (Tc)-55°C ~ 150°C (TJ)Through HoleTO-220ABTO-220-3
TO-263AB
IRFS9N60ATRLPBF
MOSFET N-CH 600V 9.2A D2PAK
Vishay Siliconix
427
In Stock
1 : $3.96000
Cut Tape (CT)
800 : $2.47979
Tape & Reel (TR)
-
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
ActiveN-ChannelMOSFET (Metal Oxide)600 V9.2A (Tc)10V750mOhm @ 5.5A, 10V4V @ 250µA49 nC @ 10 V±30V1400 pF @ 25 V-170W (Tc)-55°C ~ 150°C (TJ)Surface MountD²PAK (TO-263)TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
IRF520SPBF
MOSFET N-CH 100V 9.2A D2PAK
Vishay Siliconix
767
In Stock
1 : $1.49000
Tube
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Tube
ActiveN-ChannelMOSFET (Metal Oxide)100 V9.2A (Tc)10V270mOhm @ 5.5A, 10V4V @ 250µA16 nC @ 10 V±20V360 pF @ 25 V-3.7W (Ta), 60W (Tc)-55°C ~ 175°C (TJ)Surface MountD2PAKTO-263-3, D²Pak (2 Leads + Tab), TO-263AB
TO-247-3 HiP
STW11NK90Z
MOSFET N-CH 900V 9.2A TO247-3
STMicroelectronics
0
In Stock
1 : $7.21000
Tube
Tube
ActiveN-ChannelMOSFET (Metal Oxide)900 V9.2A (Tc)10V980mOhm @ 4.6A, 10V4.5V @ 100µA115 nC @ 10 V±30V3000 pF @ 25 V-200W (Tc)-55°C ~ 150°C (TJ)Through HoleTO-247-3TO-247-3
SGP15N60XKSA1
IRF520
MOSFET N-CH 100V 9.2A TO220AB
Harris Corporation
0
Marketplace
746 : $0.33000
Bulk
-
Bulk
ActiveN-ChannelMOSFET (Metal Oxide)100 V9.2A (Tc)-270mOhm @ 5.6A, 10V4V @ 250µA15 nC @ 10 V±20V350 pF @ 25 V-60W (Tc)-55°C ~ 175°C (TJ)Through HoleTO-220ABTO-220-3
IRG4RC10UTRPBF
IRFW520ATM
N-CHANNEL POWER MOSFET
Fairchild Semiconductor
774
Marketplace
774 : $0.40000
Bulk
-
Bulk
ActiveN-ChannelMOSFET (Metal Oxide)100 V9.2A (Tc)10V200mOhm @ 4.6A, 10V4V @ 250µA22 nC @ 10 V±20V480 pF @ 25 V-3.8W (Ta), 45W (Tc)-55°C ~ 175°C (TJ)Surface MountD2PAKTO-263-3, D²Pak (2 Leads + Tab), TO-263AB
N-CHANNEL POWER MOSFET
IRF521
N-CHANNEL POWER MOSFET
Harris Corporation
26,458
Marketplace
525 : $0.57000
Bulk
-
Bulk
ActiveN-ChannelMOSFET (Metal Oxide)80 V9.2A (Tc)10V270mOhm @ 5.6A, 10V4V @ 250µA15 nC @ 10 V±20V350 pF @ 25 V-60W (Tc)-55°C ~ 175°C (TJ)Through HoleTO-220TO-220-3
MC78M05BTG
IPP60R450E6
N-CHANNEL POWER MOSFET
Infineon Technologies
0
Marketplace
318 : $0.73000
Bulk
Bulk
ActiveN-ChannelMOSFET (Metal Oxide)600 V9.2A (Tc)10V450mOhm @ 3.4A, 10V3.5V @ 280µA28 nC @ 10 V±20V620 pF @ 100 V-74W (Tc)-55°C ~ 150°C (TJ)Through HolePG-TO220-3-1TO-220-3
SGP15N60XKSA1
IRF520
MOSFET N-CH 100V 9.2A TO220AB
Fairchild Semiconductor
0
Marketplace
1 : $1.00000
Tube
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Tube
ObsoleteN-ChannelMOSFET (Metal Oxide)100 V9.2A (Tc)10V270mOhm @ 5.5A, 10V4V @ 250µA16 nC @ 10 V±20V360 pF @ 25 V-60W (Tc)-55°C ~ 175°C (TJ)Through HoleTO-220ABTO-220-3
TO-220-3, TO-220AB
IRF520
MOSFET N-CH 100V 9.2A TO220AB
Motorola
0
Marketplace
1 : $1.00000
Tube
-
Tube
ObsoleteN-ChannelMOSFET (Metal Oxide)100 V9.2A (Tc)-270mOhm @ 5.6A, 10V4V @ 250µA15 nC @ 10 V±20V350 pF @ 25 V-60W (Tc)-55°C ~ 175°C (TJ)Through HoleTO-220ABTO-220-3
NTE2382
NTE2382
MOSFET N-CHANNEL 100V 9.2A TO220
NTE Electronics, Inc
744
Marketplace
1 : $4.79000
Bag
-
Bag
ActiveN-ChannelMOSFET (Metal Oxide)100 V9.2A (Tc)10V270mOhm @ 4.6A, 10V4V @ 250µA23 nC @ 10 V±20V400 pF @ 25 V-50W (Tc)-55°C ~ 150°C (TJ)Through HoleTO-220TO-220-3
TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
SIHF520STRL-GE3
MOSFET N-CH 100V 9.2A D2PAK
Vishay Siliconix
0
In Stock
800 : $0.61420
Tape & Reel (TR)
-
Tape & Reel (TR)
ActiveN-ChannelMOSFET (Metal Oxide)100 V9.2A (Tc)10V270mOhm @ 5.5A, 10V4V @ 250µA16 nC @ 10 V±20V360 pF @ 25 V-3.7W (Ta), 60W (Tc)-55°C ~ 175°C (TJ)Surface MountD²PAK (TO-263)TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
SIHF520STRR-GE3
MOSFET N-CH 100V 9.2A D2PAK
Vishay Siliconix
0
In Stock
800 : $0.61420
Tape & Reel (TR)
-
Tape & Reel (TR)
ActiveN-ChannelMOSFET (Metal Oxide)100 V9.2A (Tc)10V270mOhm @ 5.5A, 10V4V @ 250µA16 nC @ 10 V±20V360 pF @ 25 V-3.7W (Ta), 60W (Tc)-55°C ~ 175°C (TJ)Surface MountD²PAK (TO-263)TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
IRF840ALPBF
IRL520LPBF
MOSFET N-CH 100V 9.2A TO262-3
Vishay Siliconix
0
In Stock
1,000 : $0.75089
Tube
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Tube
ActiveN-ChannelMOSFET (Metal Oxide)100 V9.2A (Tc)4V, 5V270mOhm @ 5.5A, 5V2V @ 250µA12 nC @ 5 V±10V490 pF @ 25 V-60W (Tc)-55°C ~ 175°C (TJ)Through HoleTO-262-3TO-262-3 Long Leads, I²Pak, TO-262AA
TO-263AB
SIHFS9N60A-GE3
MOSFET N-CH 600V 9.2A TO263
Vishay Siliconix
0
In Stock
1,000 : $1.15224
Tape & Reel (TR)
-
Tape & Reel (TR)
ActiveN-ChannelMOSFET (Metal Oxide)600 V9.2A (Tc)10V750mOhm @ 5.5A, 10V4V @ 250µA49 nC @ 10 V±30V1400 pF @ 25 V-170W (Tc)-55°C ~ 150°C (TJ)Surface MountD²PAK (TO-263)TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
TO-220AB
IRF520
MOSFET N-CH 100V 9.2A TO220AB
Vishay Siliconix
0
In Stock
Obsolete
-
Tube
ObsoleteN-ChannelMOSFET (Metal Oxide)100 V9.2A (Tc)10V270mOhm @ 5.5A, 10V4V @ 250µA16 nC @ 10 V±20V360 pF @ 25 V-60W (Tc)-55°C ~ 175°C (TJ)Through HoleTO-220ABTO-220-3
TO-220AB
IRL520
MOSFET N-CH 100V 9.2A TO220AB
Vishay Siliconix
0
In Stock
Obsolete
-
Tube
ObsoleteN-ChannelMOSFET (Metal Oxide)100 V9.2A (Tc)4V, 5V270mOhm @ 5.5A, 5V2V @ 250µA12 nC @ 5 V±10V490 pF @ 25 V-60W (Tc)-55°C ~ 175°C (TJ)Through HoleTO-220ABTO-220-3
Showing
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of 45

9.2A (Tc) Transistors - FETs, MOSFETs - Single


Discrete Field Effect Transistors (FETs) are widely used in power conversion, motor control, solid-state lighting, and other applications where their characteristic ability to be switched on & off at high frequencies while carrying substantial amounts of current is advantageous. They are used almost universally for applications requiring voltage ratings of a few hundred volts or less, above which other device types such as IGBTs become more competitive.