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Mfr Part #
Quantity Available
Price
Series
Package
Product Status
FET Type
Technology
Drain to Source Voltage (Vdss)
Current - Continuous Drain (Id) @ 25°C
Drive Voltage (Max Rds On, Min Rds On)
Rds On (Max) @ Id, Vgs
Vgs(th) (Max) @ Id
Gate Charge (Qg) (Max) @ Vgs
Vgs (Max)
Input Capacitance (Ciss) (Max) @ Vds
FET Feature
Power Dissipation (Max)
Operating Temperature
Mounting Type
Supplier Device Package
Package / Case
SOT-227B,MINIBLOC  Pkg
IXFN80N50
MOSFET N-CH 500V 80A SOT-227B
IXYS
120
In Stock
1 : $58.65000
Tube
Tube
ActiveN-ChannelMOSFET (Metal Oxide)500 V66A (Tc)10V55mOhm @ 500mA, 10V4.5V @ 8mA380 nC @ 10 V±20V9890 pF @ 25 V-700W (Tc)-55°C ~ 150°C (TJ)Chassis MountSOT-227BSOT-227-4, miniBLOC
TO-247-3 HiP
STW72N60DM2AG
MOSFET N-CH 600V 66A TO247
STMicroelectronics
436
In Stock
1 : $12.49000
Tube
Tube
ActiveN-ChannelMOSFET (Metal Oxide)600 V66A (Tc)10V42mOhm @ 33A, 10V5V @ 250µA121 nC @ 10 V±25V5508 pF @ 100 V-446W (Tc)-55°C ~ 150°C (TJ)Through HoleTO-247-3TO-247-3
UJ4C075023K3S
UJ4C075023K3S
750V/23MOHM, SIC, CASCODE, G4, T
UnitedSiC
433
In Stock
1 : $15.55000
Tube
-
Tube
ActiveN-ChannelSiCFET (Silicon Carbide)750 V66A (Tc)12V29mOhm @ 40A, 12V6V @ 10mA37.8 nC @ 15 V±20V1400 pF @ 400 V-306W (Tc)-55°C ~ 175°CThrough HoleTO-247-3TO-247-3
C3D16065D1
C3M0040120D
1200V 40MOHM SIC MOSFET
Wolfspeed, Inc.
487
In Stock
1 : $24.32000
Tube
Tube
ActiveN-ChannelSiCFET (Silicon Carbide)1200 V66A (Tc)15V53.5mOhm @ 33.3A, 15V3.6V @ 9.5mA101 nC @ 15 V+15V, -4V2900 pF @ 1000 V-326W (Tc)-40°C ~ 175°C (TJ)Through HoleTO-247-3TO-247-3
MSC040SMA120B4
MSC040SMA120B4
SICFET N-CH 1200V 66A TO247-4
Microchip Technology
114
In Stock
1 : $26.64000
Tube
-
Tube
ActiveN-ChannelSiCFET (Silicon Carbide)1200 V66A (Tc)20V50mOhm @ 40A, 20V2.6V @ 2mA137 nC @ 20 V+23V, -10V1990 pF @ 1000 V-323W (Tc)-55°C ~ 175°C (TJ)Through HoleTO-247-4TO-247-4
MC78M05BTG
HUF75333P3
MOSFET N-CH 55V 66A TO220-3
Fairchild Semiconductor
139,017
Marketplace
396 : $0.76000
Tube
Tube
ObsoleteN-ChannelMOSFET (Metal Oxide)55 V66A (Tc)10V16mOhm @ 66A, 10V4V @ 250µA85 nC @ 20 V±20V1300 pF @ 25 V-150W (Tc)-55°C ~ 175°C (TJ)Through HoleTO-220-3TO-220-3
TO-264
IXFK66N85X
MOSFET N-CH 850V 66A TO264
IXYS
25
In Stock
1 : $27.56000
Tube
Tube
ActiveN-ChannelMOSFET (Metal Oxide)850 V66A (Tc)10V65mOhm @ 500mA, 10V5.5V @ 8mA230 nC @ 10 V±30V8900 pF @ 25 V-1250W (Tc)-55°C ~ 150°C (TJ)Through HoleTO-264AATO-264-3, TO-264AA
ISL9N302AS3
HUF75333S3
MOSFET N-CH 55V 66A I2PAK
Fairchild Semiconductor
1,488
Marketplace
525 : $0.57000
Tube
Tube
ObsoleteN-ChannelMOSFET (Metal Oxide)55 V66A (Tc)10V16mOhm @ 66A, 10V4V @ 250µA85 nC @ 20 V±20V1300 pF @ 25 V-150W (Tc)-55°C ~ 175°C (TJ)Through HoleI2PAK (TO-262)TO-262-3 Long Leads, I²Pak, TO-262AA
1,512
Marketplace
332 : $0.90000
Bulk
Bulk
ActiveN-ChannelMOSFET (Metal Oxide)55 V66A (Tc)10V16mOhm @ 66A, 10V4V @ 250µA85 nC @ 20 V±20V1300 pF @ 25 V-150W (Tc)-55°C ~ 175°C (TJ)Through HoleTO-247TO-247-3
UJ4SC075006K4S
UJ4C075023K4S
750V/23MOHM, SIC, CASCODE, G4, T
UnitedSiC
0
In Stock
1 : $16.00000
Tube
-
Tube
ActiveN-ChannelSiCFET (Silicon Carbide)750 V66A (Tc)12V29mOhm @ 40A, 12V6V @ 10mA37.8 nC @ 15 V±20V1400 pF @ 400 V-306W (Tc)-55°C ~ 175°C (TJ)Through HoleTO-247-4TO-247-4
SOT-227B,MINIBLOC  Pkg
IXFN82N60Q3
MOSFET N-CH 600V 66A SOT227B
IXYS
0
In Stock
1 : $58.93000
Tube
Tube
ActiveN-ChannelMOSFET (Metal Oxide)600 V66A (Tc)10V75mOhm @ 41A, 10V6.5V @ 8mA275 nC @ 10 V±30V13500 pF @ 25 V-960W (Tc)-55°C ~ 150°C (TJ)Chassis MountSOT-227BSOT-227-4, miniBLOC
LFPAK56/POWER-SO8/SOT669
PSMN6R0-30YLDX
MOSFET N-CH 30V 66A LFPAK56
Nexperia USA Inc.
0
In Stock
1 : $0.87000
Cut Tape (CT)
1,500 : $0.37065
Tape & Reel (TR)
-
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
ActiveN-ChannelMOSFET (Metal Oxide)30 V66A (Tc)4.5V, 10V6mOhm @ 15A, 10V2.2V @ 1mA13.7 nC @ 10 V±20V832 pF @ 15 V-47W (Tc)-55°C ~ 175°C (TJ)Surface MountLFPAK56, Power-SO8SC-100, SOT-669
LFPAK56/POWER-SO8/SOT669
PSMN6R1-30YLDX
MOSFET N-CH 30V 66A LFPAK56
Nexperia USA Inc.
0
In Stock
1 : $0.87000
Cut Tape (CT)
1,500 : $0.37065
Tape & Reel (TR)
-
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
ActiveN-ChannelMOSFET (Metal Oxide)30 V66A (Tc)4.5V, 10V6mOhm @ 15A, 10V2.2V @ 1mA13.6 nC @ 10 V±20V817 pF @ 15 V-47W (Tc)-55°C ~ 175°C (TJ)Surface MountLFPAK56, Power-SO8SC-100, SOT-669
C3M_K
C3M0040120K
1200V 40MOHM SIC MOSFET
Wolfspeed, Inc.
205
In Stock
1 : $24.32000
Tube
Tube
ActiveN-ChannelSiCFET (Silicon Carbide)1200 V66A (Tc)15V53.5mOhm @ 33.3A, 15V3.6V @ 9.2mA99 nC @ 15 V+15V, -4V2900 pF @ 1000 V-326W (Tc)-40°C ~ 175°C (TJ)Through HoleTO-247-4LTO-247-4
MSC050SDA120B
MSC040SMA120B
SICFET N-CH 1200V 66A TO247-3
Microchip Technology
2
In Stock
1 : $25.87000
Tube
-
Tube
ActiveN-ChannelSiCFET (Silicon Carbide)1200 V66A (Tc)20V50mOhm @ 40A, 20V2.7V @ 2mA137 nC @ 20 V+23V, -10V1990 pF @ 1000 V-323W (Tc)-55°C ~ 175°C (TJ)Through HoleTO-247-3TO-247-3
SOT-227B,MINIBLOC  Pkg
IXFN80N50P
MOSFET N-CH 500V 66A SOT227B
IXYS
0
In Stock
1 : $34.47000
Tube
Tube
ActiveN-ChannelMOSFET (Metal Oxide)500 V66A (Tc)10V65mOhm @ 500mA, 10V5V @ 8mA195 nC @ 10 V±30V12700 pF @ 25 V-700W (Tc)-55°C ~ 150°C (TJ)Chassis MountSOT-227BSOT-227-4, miniBLOC
LFPAK33
PSMN6R4-30MLDX
MOSFET N-CH 30V 66A LFPAK33
Nexperia USA Inc.
0
In Stock
1 : $0.81000
Cut Tape (CT)
1,500 : $0.34637
Tape & Reel (TR)
-
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
ActiveN-ChannelMOSFET (Metal Oxide)30 V66A (Tc)4.5V, 10V6.3mOhm @ 15A, 10V2.2V @ 1mA13.7 nC @ 10 V±20V832 pF @ 15 V-51W (Tc)-55°C ~ 175°C (TJ)Surface MountLFPAK33SOT-1210, 8-LFPAK33 (5-Lead)
MOSFET N-CH 40V 66A PPAK SO-8
SQJ150EP-T1_GE3
MOSFET N-CH 40V 66A PPAK SO-8
Vishay Siliconix
0
In Stock
1 : $0.89000
Cut Tape (CT)
3,000 : $0.35541
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
ActiveN-ChannelMOSFET (Metal Oxide)40 V66A (Tc)10V8.4mOhm @ 15A, 10V3.5V @ 250µA20 nC @ 10 V±20V1274 pF @ 25 V-65W (Tc)-55°C ~ 175°C (TJ)Surface MountPowerPAK® SO-8PowerPAK® SO-8
TO-247-3 HiP
STW70N60DM2
MOSFET N-CH 600V 66A TO247
STMicroelectronics
0
In Stock
1 : $12.32000
Tube
Tube
ActiveN-ChannelMOSFET (Metal Oxide)600 V66A (Tc)10V42mOhm @ 33A, 10V5V @ 250µA121 nC @ 10 V±25V5508 pF @ 100 V-446W (Tc)-55°C ~ 150°C (TJ)Through HoleTO-247-3TO-247-3
TO-247 Plus X
IXFX66N85X
MOSFET N-CH 850V 66A PLUS247-3
IXYS
0
In Stock
1 : $27.18000
Tube
Tube
ActiveN-ChannelMOSFET (Metal Oxide)850 V66A (Tc)10V65mOhm @ 500mA, 10V5.5V @ 8mA230 nC @ 10 V±30V8900 pF @ 25 V-1250W (Tc)-55°C ~ 150°C (TJ)Through HolePLUS247™-3TO-247-3 Variant
PowerPAK-SO-8L
SQJ186ELP-T1_GE3
AUTOMOTIVE N-CHANNEL 80 V (D-S)
Vishay Siliconix
0
In Stock
1 : $0.99000
Cut Tape (CT)
3,000 : $0.45227
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
ActiveN-ChannelMOSFET (Metal Oxide)80 V66A (Tc)4.5V, 10V12.5mOhm @ 20A, 10V2.5V @ 250µA45 nC @ 10 V±20V2325 pF @ 25 V-135W (Tc)-55°C ~ 175°C (TJ)Surface MountPowerPAK® SO-8PowerPAK® SO-8
D2PAK
HUF75333S3ST
MOSFET N-CH 55V 66A D2PAK
Harris Corporation
0
Marketplace
1 : $1.00000
Bulk
Bulk
ObsoleteN-ChannelMOSFET (Metal Oxide)55 V66A (Tc)10V16mOhm @ 66A, 10V4V @ 250µA85 nC @ 20 V±20V1300 pF @ 25 V-150W (Tc)-55°C ~ 175°C (TJ)Surface MountD2PAK (TO-263)TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
SGP15N60XKSA1
HUF75333P3
MOSFET N-CH 55V 66A TO220-3
Harris Corporation
0
Marketplace
1 : $1.00000
Tube
Tube
ObsoleteN-ChannelMOSFET (Metal Oxide)55 V66A (Tc)-16mOhm @ 66A, 10V4V @ 250µA85 nC @ 20 V±20V1300 pF @ 25 V-150W (Tc)-55°C ~ 175°C (TJ)Through HoleTO-220-3TO-220-3
56A, 55V, 0.016 OHM, N CHANNEL,
HUF75333P3_NS2552
56A, 55V, 0.016 OHM, N CHANNEL,
Fairchild Semiconductor
0
Marketplace
1 : $1.00000
Bulk
Bulk
ActiveN-ChannelMOSFET (Metal Oxide)55 V66A (Tc)10V16mOhm @ 66A, 10V4V @ 250µA85 nC @ 20 V±20V1300 pF @ 25 V-150W (Tc)-55°C ~ 175°C (TJ)Through HoleTO-220-3TO-220-3
ISL9N302AS3
HUF75333S3
MOSFET N-CH 55V 66A D2PAK
Harris Corporation
0
Marketplace
1 : $1.00000
Bulk
Bulk
ActiveN-ChannelMOSFET (Metal Oxide)55 V66A (Tc)-16mOhm @ 66A, 10V4V @ 250µA85 nC @ 20 V±20V1300 pF @ 25 V-150W (Tc)-55°C ~ 175°C (TJ)Surface MountD2PAK (TO-263)TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Showing
1 - 25
of 55

66A (Tc) Transistors - FETs, MOSFETs - Single


Discrete Field Effect Transistors (FETs) are widely used in power conversion, motor control, solid-state lighting, and other applications where their characteristic ability to be switched on & off at high frequencies while carrying substantial amounts of current is advantageous. They are used almost universally for applications requiring voltage ratings of a few hundred volts or less, above which other device types such as IGBTs become more competitive.