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Mfr Part #
Quantity Available
Price
Series
Package
Product Status
FET Type
Technology
Drain to Source Voltage (Vdss)
Current - Continuous Drain (Id) @ 25°C
Drive Voltage (Max Rds On, Min Rds On)
Rds On (Max) @ Id, Vgs
Vgs(th) (Max) @ Id
Gate Charge (Qg) (Max) @ Vgs
Vgs (Max)
Input Capacitance (Ciss) (Max) @ Vds
FET Feature
Power Dissipation (Max)
Operating Temperature
Mounting Type
Supplier Device Package
Package / Case
TO-247-3L
UJ3C120040K3S
SICFET N-CH 1200V 65A TO247-3
UnitedSiC
1,972
In Stock
1 : $29.30000
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ActiveN-ChannelSiCFET (Cascode SiCJFET)1200 V65A (Tc)12V45mOhm @ 40A, 12V6V @ 10mA51 nC @ 15 V±25V1500 pF @ 100 V-429W (Tc)-55°C ~ 175°C (TJ)Through HoleTO-247-3TO-247-3
TO-247-3L
UF3C120040K3S
SICFET N-CH 1200V 65A TO247-3
UnitedSiC
37,053
In Stock
1 : $29.30000
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ActiveN-ChannelSiCFET (Cascode SiCJFET)1200 V65A (Tc)12V45mOhm @ 40A, 12V6V @ 10mA51 nC @ 15 V±25V1500 pF @ 100 V-429W (Tc)-55°C ~ 175°C (TJ)Through HoleTO-247-3TO-247-3
SOT-227B,MINIBLOC  Pkg
IXFN66N85X
MOSFET N-CH 850V 65A SOT227B
IXYS
209
In Stock
1 : $48.08000
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ActiveN-ChannelMOSFET (Metal Oxide)850 V65A (Tc)10V65mOhm @ 33A, 10V5.5V @ 8mA230 nC @ 10 V±30V8900 pF @ 25 V-830W (Tc)-55°C ~ 150°C (TJ)Chassis MountSOT-227BSOT-227-4, miniBLOC
8-Power TDFN
CSD17527Q5A
MOSFET N-CH 30V 65A 8VSON
Texas Instruments
7,647
In Stock
1 : $1.27000
Cut Tape (CT)
2,500 : $0.56160
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
ActiveN-ChannelMOSFET (Metal Oxide)30 V65A (Tc)4.5V, 10V10.8mOhm @ 11A, 10V2V @ 250µA3.4 nC @ 4.5 V±20V506 pF @ 15 V-3W (Ta)-55°C ~ 150°C (TJ)Surface Mount8-VSONP (5x6)8-PowerTDFN
D2PAK-3L
UJ3C065030B3
MOSFET N-CH 650V 65A TO263
UnitedSiC
2,825
In Stock
1 : $19.39000
Cut Tape (CT)
800 : $13.38945
Tape & Reel (TR)
-
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
ActiveN-Channel-650 V65A (Tc)12V35mOhm @ 50A, 12V6V @ 10mA51 nC @ 15 V±25V1500 pF @ 100 V-242W (Tc)-55°C ~ 175°C (TJ)Surface MountTO-263 (D2Pak)TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
TO-247-4L
UF3C120040K4S
SICFET N-CH 1200V 65A TO247-4
UnitedSiC
888
In Stock
1 : $29.30000
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ActiveN-ChannelSiCFET (Cascode SiCJFET)1200 V65A (Tc)12V45mOhm @ 40A, 12V6V @ 10mA43 nC @ 12 V±25V1500 pF @ 100 V-429W (Tc)-55°C ~ 175°C (TJ)Through HoleTO-247-4TO-247-4
TO-263 (D2Pak)
SUM65N20-30-E3
MOSFET N-CH 200V 65A TO263
Vishay Siliconix
6,134
In Stock
1 : $5.13000
Cut Tape (CT)
800 : $3.21120
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
ActiveN-ChannelMOSFET (Metal Oxide)200 V65A (Tc)10V30mOhm @ 30A, 10V4V @ 250µA130 nC @ 10 V±20V5100 pF @ 25 V-3.75W (Ta), 375W (Tc)-55°C ~ 175°C (TJ)Surface MountTO-263 (D²Pak)TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
TO-247-3
NTHL040N65S3F
MOSFET N-CH 650V 65A TO247-3
onsemi
450
In Stock
1 : $11.72000
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ActiveN-ChannelMOSFET (Metal Oxide)650 V65A (Tc)10V40mOhm @ 32.5A, 10V5V @ 6.5mA158 nC @ 10 V±30V5940 pF @ 400 V-446W (Tc)-55°C ~ 150°C (TJ)Through HoleTO-247-3TO-247-3
NVH4L080N120SC1
NTH4L040N65S3F
MOSFET N-CH 650V 65A TO247-4
onsemi
350
In Stock
1 : $11.53000
Tube
1 : $11.53000
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ActiveN-ChannelMOSFET (Metal Oxide)650 V65A (Tc)10V40mOhm @ 32.5A, 10V5V @ 2.1mA158 nC @ 10 V±30V5940 pF @ 400 V-446W (Tc)-55°C ~ 150°C (TJ)Through HoleTO-247-4LTO-247-4
NVH4L080N120SC1
NVH4L040N65S3F
MOSFET N-CH 650V 65A TO247-4
onsemi
425
In Stock
1 : $14.04000
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ActiveN-ChannelMOSFET (Metal Oxide)650 V65A (Tc)-40mOhm @ 32.5A, 10V5V @ 2.1mA160 nC @ 10 V±30V5665 pF @ 400 V-446W (Tc)-55°C ~ 150°C (TJ)Through HoleTO-247-4LTO-247-4
PowerDI5060-8
DMT36M1LPS-13
MOSFET N-CH 30V 65A PWRDI5060-8
Diodes Incorporated
1,435
In Stock
1 : $0.58000
Cut Tape (CT)
2,500 : $0.20477
Tape & Reel (TR)
-
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
ActiveN-ChannelMOSFET (Metal Oxide)30 V65A (Tc)4.5V, 10V6mOhm @ 20A, 10V3V @ 250µA16.7 nC @ 10 V±20V1155 pF @ 15 V-2.6W (Ta)-55°C ~ 150°C (TJ)Surface MountPowerDI5060-88-PowerTDFN
8PowerVDFN
STL65N3LLH5
MOSFET N-CH 30V 65A POWERFLAT
STMicroelectronics
4,527
In Stock
1 : $1.19000
Cut Tape (CT)
3,000 : $0.73275
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
ObsoleteN-ChannelMOSFET (Metal Oxide)30 V65A (Tc)4.5V, 10V5.8mOhm @ 9.5A, 10V1V @ 250µA12 nC @ 4.5 V±22V1500 pF @ 25 V-60W (Tc)-55°C ~ 150°C (TJ)Surface MountPowerFlat™ (5x6)8-PowerVDFN
TO-263 (D2Pak)
SQM10250E_GE3
MOSFET N-CH 250V 65A TO263
Vishay Siliconix
259
In Stock
1 : $3.36000
Cut Tape (CT)
800 : $2.10775
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
ActiveN-ChannelMOSFET (Metal Oxide)250 V65A (Tc)7.5V, 10V30mOhm @ 15A, 10V3.5V @ 250µA75 nC @ 10 V±20V4050 pF @ 25 V-375W (Tc)-55°C ~ 175°C (TJ)Surface MountTO-263 (D²Pak)TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
TO-247-3 HiP
SCT50N120
SICFET N-CH 1200V 65A HIP247
STMicroelectronics
503
In Stock
1 : $41.62000
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ActiveN-ChannelSiCFET (Silicon Carbide)1200 V65A (Tc)20V69mOhm @ 40A, 20V3V @ 1mA122 nC @ 20 V+25V, -10V1900 pF @ 400 V-318W (Tc)-55°C ~ 200°C (TJ)Through HoleHiP247™TO-247-3
25P06
G65P06K
P60V,RD(MAX)<18M@-10V,VTH-2V~-3.
Goford Semiconductor
7,476
In Stock
1 : $1.49000
Cut Tape (CT)
2,500 : $0.63140
Tape & Reel (TR)
-
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
ActiveP-ChannelMOSFET (Metal Oxide)60 V65A (Tc)10V18mOhm @ 20A, 10V3.5V @ 250µA75 nC @ 10 V±20V5814 pF @ 25 V-130W (Tc)-55°C ~ 175°C (TJ)Surface MountTO-252TO-252-3, DPak (2 Leads + Tab), SC-63
G50N03J
G50N03J
N30V,RD(MAX)<7M@10V,RD(MAX)<12M@
Goford Semiconductor
4,539
In Stock
1 : $0.65000
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ActiveN-ChannelMOSFET (Metal Oxide)30 V65A (Tc)4.5V, 10V7mOhm @ 20A, 10V2.5V @ 250µA16.6 nC @ 10 V±20V1255 pF @ 15 V-48W (Tc)-55°C ~ 150°C (TJ)Through HoleTO-251TO-251-3 Stub Leads, IPak
TO-3P-3,TO-247-3
FQA65N20
MOSFET N-CH 200V 65A TO3PN
onsemi
76
In Stock
1 : $5.98000
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Last Time BuyN-ChannelMOSFET (Metal Oxide)200 V65A (Tc)10V32mOhm @ 32.5A, 10V5V @ 250µA200 nC @ 10 V±30V7900 pF @ 25 V-310W (Tc)-55°C ~ 150°C (TJ)Through HoleTO-3PNTO-3P-3, SC-65-3
TO-247-3
NVHL040N65S3F
MOSFET N-CH 650V 65A TO247-3
onsemi
80
In Stock
1 : $15.09000
Tube
Tube
ActiveN-ChannelMOSFET (Metal Oxide)650 V65A (Tc)10V40mOhm @ 32.5A, 10V5V @ 2.1mA153 nC @ 10 V±30V5875 pF @ 400 V-446W (Tc)-55°C ~ 150°C (TJ)Through HoleTO-247-3TO-247-3
D3Pak
MSC035SMA070S
MOSFET N-CH 700V D3PAK
Microchip Technology
44
In Stock
1 : $17.06000
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ActiveN-ChannelSiCFET (Silicon Carbide)700 V65A (Tc)20V44mOhm @ 30A, 20V2.7V @ 1mA99 nC @ 20 V+23V, -10V2010 pF @ 700 V-206W (Tc)-55°C ~ 175°C (TJ)Surface MountD3PAKTO-268-3, D³Pak (2 Leads + Tab), TO-268AA
41
In Stock
1 : $2.93000
Tube
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ActiveN-ChannelMOSFET (Metal Oxide)100 V65A (Tc)10V4.8mOhm @ 32.5A, 10V4V @ 1mA81 nC @ 10 V±20V5400 pF @ 50 V-45W (Tc)150°C (TJ)Through HoleTO-220SISTO-220-3 Full Pack
4739284
NTHLD040N65S3HF
MOSFET N-CH 650V 65A TO247
onsemi
28
In Stock
1 : $12.53000
Tube
Tube
ActiveN-ChannelMOSFET (Metal Oxide)650 V65A (Tc)10V40mOhm @ 32.5A, 10V5V @ 2.1mA159 nC @ 10 V±30V5945 pF @ 400 V-446W (Tc)-55°C ~ 150°C (TJ)Through HoleTO-247-3TO-247-3
TO-247-3
FCHD040N65S3-F155
MOSFET N-CH 650V 65A TO247
onsemi
42
In Stock
1 : $10.29000
Tube
Tube
ActiveN-ChannelMOSFET (Metal Oxide)650 V65A (Tc)10V40mOhm @ 32.5A, 10V4.5V @ 1.7mA136 nC @ 10 V±30V4740 pF @ 400 V-417W (Tc)-55°C ~ 150°C (TJ)Through HoleTO-247-3TO-247-3
TO-251-3 Long Leads IPak
STU65N3LLH5
MOSFET N CH 30V 65A IPAK
STMicroelectronics
436
In Stock
1 : $1.07000
Tube
Tube
ObsoleteN-ChannelMOSFET (Metal Oxide)30 V65A (Tc)4.5V, 10V7.3mOhm @ 32.5A, 10V3V @ 250µA8 nC @ 4.5 V±22V1290 pF @ 25 V-50W (Tc)-55°C ~ 175°C (TJ)Through HoleI-PAKTO-251-3 Short Leads, IPak, TO-251AA
TO-247-3 HiP
STW62NM60N
MOSFET N-CH 600V 65A TO247
STMicroelectronics
43
In Stock
1 : $14.87000
Tube
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ObsoleteN-ChannelMOSFET (Metal Oxide)600 V65A (Tc)10V49mOhm @ 32.5A, 10V4V @ 250µA174 nC @ 10 V±25V5800 pF @ 100 V-450W (Tc)150°C (TJ)Through HoleTO-247-3TO-247-3
GC20N65F
G65P06F
P-CH, -60V, 65A, RD(MAX)<18M@-10
Goford Semiconductor
130
In Stock
1 : $1.62000
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ActiveP-ChannelMOSFET (Metal Oxide)60 V65A (Tc)10V18mOhm @ 20A, 10V3.5V @ 250µA75 nC @ 10 V±20V6477 pF @ 25 V-39W (Tc)-55°C ~ 150°C (TJ)Through HoleTO-220FTO-220-3 Full Pack
Showing
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of 82

65A (Tc) Transistors - FETs, MOSFETs - Single


Discrete Field Effect Transistors (FETs) are widely used in power conversion, motor control, solid-state lighting, and other applications where their characteristic ability to be switched on & off at high frequencies while carrying substantial amounts of current is advantageous. They are used almost universally for applications requiring voltage ratings of a few hundred volts or less, above which other device types such as IGBTs become more competitive.